onsemi MPS3646RLRAG
- Part No.:
- MPS3646RLRAG
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Datasheet:
-
MPS3646RLRAG.pdf
- Description:
- TRANS NPN 15V 0.3A TO92
- Quantity:
- Payment:

- Shipping:

Inventory:2,299
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MPS3646RLRAG from onsemi is an NPN silicon switching transistor in TO-92 (CASE 29−11) package, rated for VCEO = 15 V, IC = 300 mA continuous, and PD = 625 mW at TA = 25°C, with fT = 350 MHz and VCE(sat) ≤ 0.5 V at IC = 300 mA / IB = 30 mA - used in low-voltage DC-DC converter switch stages and LED driver current control.
For engineers reviewing the MPS3646RLRAG datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCEO(sus) = 15 V rating, guaranteed hFE ≥ 15 at IC = 300 mA, thermal resistance RJA = 200 °C/W, and TO-92 lead-form compatibility with manual assembly and through-hole PCB layouts.
Technical Context
This NPN bipolar junction transistor operates as a saturated switch in low-power linear and switching applications, with specified VCEO(sus) = 15 V ensuring reliable turn-off under inductive load conditions and VBE(sat) = 0.73–1.2 V enabling direct drive from 3.3 V or 5 V logic outputs. Its fT = 350 MHz supports fast switching in pulse-width modulation circuits up to ~50 MHz duty-cycle edge rates.
Thermal design is constrained by RJA = 200 °C/W and RJC = 83.3 °C/W, requiring board-level copper area or airflow for sustained 300 mA operation above ambient 50°C; switching times (ton ≤ 18 ns, toff ≤ 28 ns) are validated at VCC = 10 V with IB1 = IB2 = 30 mA per Figure 1 test circuit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 15 Vdc - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating range in low-side switch configurations. |
| IC (continuous) | 300 mAdc - Continuous collector current limit at TA = 25°C; derates to zero at TA ≈ 125°C using 5.0 mW/°C slope. |
| fT | 350 MHz - Current-gain bandwidth product at IC = 30 mA, VCE = 10 V, f = 100 MHz; enables high-speed switching in PWM dimming and oscillator designs. |
| VCE(sat) | ≤ 0.5 V at IC = 300 mA, IB = 30 mA - Confirmed saturation voltage ensures < 150 mW conduction loss at full rated current. |
| hFE | 15 min at IC = 300 mA, VCE = 1.0 V - Minimum DC current gain guarantees sufficient base drive margin for reliable saturation in production designs. |
| toff | ≤ 28 ns - Verified turn-off time at VCC = 10 V, IC = 300 mA, IB1 = IB2 = 30 mA; critical for minimizing switching losses in >100 kHz SMPS. |
Pinout & Package
Package: TO-92 (CASE 29−11, STYLE 1), molded plastic with 3 leads, Pb-free compliant, JEDEC-standard outline per datasheet Figure 5.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current return path; connected to ground or low-side reference in common-emitter switch topologies. |
| 2 | Base | Control input; requires ≥30 mA drive current to ensure VCE(sat) ≤ 0.5 V at IC = 300 mA. |
| 3 | Collector | Power output node; handles switched load current up to 300 mA with VCE ≤ 15 V. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free TO-92 package | RoHS-compliant lead finish and molding compound; supports automated through-hole reflow and hand-soldering without lead contamination risk. |
| Guaranteed VCEO(sus) = 15 V | Validated sustaining voltage under zero-base-current condition ensures robustness against inductive kickback in relay and solenoid drivers. |
| Low VCE(sat) at high IC | ≤ 0.5 V at 300 mA enables < 150 mW conduction loss, reducing thermal stress in compact enclosures. |
| Fast switching (toff ≤ 28 ns) | Minimizes transition losses in PWM-controlled loads operating up to 500 kHz, improving system efficiency. |
| Wide TJ range (−55°C to +150°C) | Supports deployment in automotive under-hood, industrial motor control, and outdoor lighting environments without derating. |
Applications
| LED Constant-Current Driver | Low-Voltage DC-DC Converter Switch |
|---|---|
Use Scenario: Driving high-brightness LEDs from 5 V or 12 V rails using PWM dimming at 1–20 kHz. IC Role / Device Role / Timing Role: NPN switch controlling LED cathode current; operates in saturation during ON phase and cutoff during OFF phase. Use Value: VCE(sat) ≤ 0.5 V limits power dissipation to < 150 mW at 300 mA, enabling single-device thermal management without heatsinking. |
Use Scenario: Low-cost buck converter for powering microcontrollers and sensors from 9–12 V battery sources. IC Role / Device Role / Timing Role: Main switching transistor in asynchronous topology; driven by PWM controller IC with 30 mA base current capability. Use Value: toff ≤ 28 ns and fT = 350 MHz support stable operation up to 500 kHz switching frequency with minimal dead-time penalty. |
| Relay/Solenoid Interface | Logic-Level Signal Amplifier |
Use Scenario: Interfacing 3.3 V or 5 V microcontroller GPIO to 12 V relay coils drawing ≤ 250 mA. IC Role / Device Role / Timing Role: Low-side driver providing galvanic isolation between logic and inductive load; clamped via external flyback diode. Use Value: VCEO(sus) = 15 V exceeds typical 12 V coil supply, preventing breakdown during L·di/dt transients up to 30 V peak. |
Use Scenario: Boosting weak sensor signals (e.g., thermistor divider outputs) to drive analog comparator inputs. IC Role / Device Role / Timing Role: Common-emitter amplifier stage with fixed bias; configured for linear operation below saturation. Use Value: hFE ≥ 30 at IC = 30 mA ensures predictable small-signal gain stability across −55°C to +125°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC337-40 | VCEO = 45 V, IC = 500 mA, hFE = 250–630 (min 100), TO-92 package | Higher voltage/current rating but looser hFE tolerance; less suitable for precision current-switching where tight gain control needed | Select BC337-40 only if VCEO > 15 V or IC > 300 mA is required; verify base drive sufficiency for target hFE bin. |
| PN2222A | VCEO = 30 V, IC = 600 mA, hFE = 100 min at IC = 150 mA, same TO-92 footprint | Higher gain and current capacity but slower toff (≈ 250 ns); unsuitable for >100 kHz switching | Choose PN2222A for linear amplification or low-frequency switching; avoid in PWM dimming or SMPS above 50 kHz. |
Compared with BC337-40 and PN2222A, MPS3646RLRAG delivers tighter hFE control at high IC, lower VCE(sat), and faster switching - making it optimal for cost-sensitive, high-efficiency 15 V, 300 mA switching applications where thermal and timing margins are constrained.
Availability
MPS3646RLRAG is available at Aetrix Electronics and suitable for LED driver modules, low-voltage DC-DC converters, and relay interface circuits requiring stable component supply, consistent parametric performance, and RoHS-compliant through-hole assembly.
Supply support for MPS3646RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
MPS3646RLRAG belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-effective, high-reliability switching in consumer, industrial, and automotive auxiliary systems.
FAQ
What is the maximum continuous collector current for MPS3646RLRAG at 25°C ambient?
The MPS3646RLRAG is rated for 300 mAdc continuous collector current at TA = 25°C, with linear derating of 5.0 mW/°C above that temperature. This value is confirmed in the "MAXIMUM RATINGS" table of the official onsemi datasheet (Publication Order Number: MPS3646/D), and applies to standard and Pb-free versions of the MPS3646RLRAG.
Does MPS3646RLRAG support direct drive from a 3.3 V microcontroller GPIO?
Yes - the MPS3646RLRAG achieves guaranteed saturation (VCE(sat) ≤ 0.5 V) with IB = 30 mA at IC = 300 mA, and its VBE(sat) ranges from 0.73 V to 1.2 V. A 3.3 V GPIO can deliver sufficient base current via a 100 Ω series resistor (IB ≈ 25 mA), making MPS3646RLRAG compatible with most 3.3 V MCU outputs without level-shifting.
What is the thermal resistance junction-to-ambient (RJA) for MPS3646RLRAG in free-air conditions?
The thermal resistance junction-to-ambient (RJA) for MPS3646RLRAG is 200 °C/W, as specified in the "THERMAL CHARACTERISTICS" section of the onsemi datasheet. This value assumes standard TO-92 mounting on FR-4 PCB with no added copper pour; actual RJA improves to ~120 °C/W with 1 in² 2-oz copper pad.
Is MPS3646RLRAG pin-compatible with other TO-92 NPN transistors like PN2222A?
MPS3646RLRAG uses TO-92 (CASE 29−11, STYLE 1) with pinout E-B-C (pin 1–2–3), matching the mechanical footprint of PN2222A. However, electrical characteristics differ significantly - notably toff (28 ns vs. ~250 ns) and hFE distribution - so functional substitution requires circuit validation; it is not a drop-in replacement.
What is the minimum DC current gain (hFE) of MPS3646RLRAG at 300 mA collector current?
The minimum DC current gain (hFE) for MPS3646RLRAG is 15 at IC = 300 mA, VCE = 1.0 V, and TA = 25°C, as stated in the "ELECTRICAL CHARACTERISTICS" table. This guaranteed minimum ensures predictable base drive requirements for production designs targeting full-rated current switching.
MPS3646RLRAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 300 mA
- Voltage - Collector Emitter Breakdown (Max):
- 15 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 30mA, 300mA
- Current - Collector Cutoff (Max):
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 30mA, 400mV
- Power - Max:
- 625 mW
- Frequency - Transition:
- 350MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
MPS3646RLRAG FAQ
1.How can I place an order for MPS3646RLRAG through Aetrix?
Please submit a Request for Quotation (RFQ) for MPS3646RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MPS3646RLRAG reliable?
The price and inventory of MPS3646RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPS3646RLRAG is usually 5 days.
3.What payment methods are accepted for MPS3646RLRAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPS3646RLRAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MPS3646RLRAG?
MPS3646RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MPS3646RLRAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MPS3646RLRAG?
For technical support, including MPS3646RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPS3646RLRAG requirements.
6.How does Aetrix verify that MPS3646RLRAG is sourced from the original manufacturer or authorized distributors?
All MPS3646RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPS3646RLRAG meets industry standards.
7.What is the process for return or replacement of MPS3646RLRAG?
All MPS3646RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with MPS3646RLRAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MPS3646RLRAG part is unused and in its original packaging.
Return procedure for MPS3646RLRAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MPS3646RLRAG Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

