onsemi MPS6601

Overview

MPS6601 from onsemi is an NPN general-purpose amplifier transistor in TO-92 package, rated for 25 V_CEO, 1 A continuous collector current, and 625 mW power dissipation at T_A = 25°C. It delivers h_FE ≥ 50 at I_C = 100 mA, V_CE = 1.0 V, and f_T = 100 MHz, supporting linear amplification and medium-speed switching in low-voltage analog and power interface circuits.

For engineers reviewing the MPS6601 datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal behavior, TO-92 terminal mapping, real-world use cases in signal conditioning and load control, and two validated alternative transistors with documented functional trade-offs.

Technical Context

The MPS6601 operates as a silicon bipolar junction transistor optimized for DC-coupled amplification and switching up to ~100 MHz. Its design emphasizes stable h_FE across 10–1000 mA collector current and low V_CE(sat) ≤ 0.6 V at I_C/I_B = 10, enabling efficient operation in Class-A amplifiers and saturated-switch configurations.

Thermal performance is defined by R_JA = 200°C/W (PCB-mounted) and R_JC = 83.3°C/W, with safe operating area (SOA) limited by second breakdown at high V_CE/I_C combinations. Switching times - t_d ≤ 25 ns, t_r ≤ 30 ns, t_s ≤ 250 ns, t_f ≤ 50 ns - reflect its suitability for pulse-width modulation and relay drivers below 1 MHz.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), through-hole plastic package with 3 leads, Pb-free option available (MPS6601RLRAG). Dimensions per ON Semiconductor drawing: A = 4.45–5.20 mm, B = 4.32–5.33 mm, C = 3.18–4.19 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with PN2222A and BC547B, the MPS6601 uniquely balances 1 A current handling, 25 V rating, and 100 MHz f_T in TO-92 - making it optimal for cost-sensitive, medium-power analog/switching hybrids where both gain and robustness matter.

Availability

MPS6601 is available at Aetrix Electronics and suitable for audio pre-amplification, DC motor speed control, relay driving, and LED current regulation requiring stable component supply and long-term industrial availability.

Supply support for MPS6601 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MPS6601 belongs to onsemi's legacy bipolar transistor family designed for general-purpose amplification and switching in cost-sensitive, high-reliability applications across consumer, industrial, and automotive auxiliary systems.

FAQ

What is the maximum continuous collector current rating for MPS6601?

The MPS6601 has a maximum continuous collector current (I_C) rating of 1000 mA at T_A = 25°C. Derating applies above 25°C at 5.0 mW/°C. This rating supports driving moderate-power loads such as 12 V relays, small DC motors, or LED arrays without external heatsinking under typical ambient conditions. The MPS6601 must be operated within its SOA curve when subjected to simultaneous high V_CE and I_C.

Is MPS6601 compatible with standard TO-92 footprints?

Yes, the MPS6601 uses the industry-standard TO-92 (Case 29-11, Style 1) package with pin 1 = Emitter, pin 2 = Base, pin 3 = Collector. Its mechanical dimensions - including body width (4.32–5.33 mm), height (4.45–5.20 mm), and lead spacing - conform to JEDEC TO-226 specifications, ensuring compatibility with existing TO-92 sockets, wave-solder stencils, and automated placement equipment used for MPS2222A or PN2222A.

What is the minimum DC current gain (h_FE) of MPS6601 at 100 mA collector current?

The MPS6601 guarantees h_FE ≥ 50 at I_C = 100 mA, V_CE = 1.0 V, and T_A = 25°C. This value is confirmed in the "ON CHARACTERISTICS" table of the official datasheet (MPS6601/D, Rev. 4). At higher currents (500 mA and 1000 mA), the minimum h_FE drops to 50 and 30 respectively - a key design consideration for base drive sizing in switching applications.

Does MPS6601 have Pb-free packaging options?

Yes, the MPS6601RLRAG variant is explicitly designated as Pb-free in the ordering information table of the datasheet. It uses the same TO-92 package as the standard MPS6601 but complies with RoHS Directive 2011/65/EU. The "G" suffix denotes Pb-free finish, and the device meets onsemi's Pb-Free strategy per their Soldering and Mounting Techniques Reference Manual (SOLDERRM/D).

What is the unity-gain bandwidth (f_T) of MPS6601 and how is it measured?

The MPS6601 has a specified f_T of 100 MHz, measured under conditions of I_C = 50 mA, V_CE = 10 V, and f = 100 MHz, as stated in the "SMALL-SIGNAL CHARACTERISTICS" section. This parameter reflects the frequency at which the transistor's short-circuit current gain drops to unity, indicating usable gain for amplification up to ~10 MHz in practical common-emitter configurations with appropriate biasing and layout.