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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MPS6601G

Name: MPS6601G
Brand: onsemi
SKU: MPS6601G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MPS6601G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: MPS6601G.pdf

Description:: TRANS NPN 25V 1A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MPS6601G from onsemi is an NPN general-purpose amplifier transistor in TO-92 package, rated for 25 V_CEO, 1 A continuous collector current, and 625 mW power dissipation at T_A = 25°C. It delivers h_FE ≥ 50 at I_C = 100 mA, V_CE = 1.0 V, and supports switching applications with t_d/t_r/t_f ≤ 25/30/50 ns under specified test conditions - used in low-voltage DC-DC converter bias circuits and linear regulator pass transistor stages.

For engineers reviewing the MPS6601G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO = 25 V rating, confirmed TO-92 (Case 29-11) lead configuration, h_FE performance across 10–1000 mA, saturation voltage ≤ 0.6 V at I_C/I_B = 10, and Pb-free compliance per J-STD-609.

Technical Context

The MPS6601G operates as a silicon planar NPN bipolar junction transistor optimized for medium-current linear amplification and switching. Its design targets stable h_FE over I_C = 10–1000 mA and T_J = −55 to +150°C, with V_CE(sat) ≤ 0.6 V at I_C = 1000 mA and I_B = 100 mA, and f_T = 100 MHz at I_C = 50 mA, V_CE = 10 V.

Thermal performance is defined by R_JA = 200°C/W (PCB-mounted) and R_JC = 83.3°C/W, enabling operation up to 150°C junction temperature. Safe operating area (SOA) curves confirm second-breakdown immunity at pulse widths ≥ 1 ms under V_CE ≤ 25 V and I_C ≤ 1 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	25 V - Maximum allowable collector-emitter voltage before breakdown; sets upper rail limit in 24 V system bias networks.
I_C (continuous)	1000 mA - Sustained collector current capability; supports load regulation in 1 A linear regulators.
h_FE	≥50 at I_C = 100 mA, V_CE = 1.0 V - Ensures sufficient current gain for base drive in discrete Darlington pre-stages.
V_CE(sat)	≤0.6 V at I_C/I_B = 10 - Minimizes conduction loss in saturated-switching applications like relay drivers.
f_T	100 MHz - Enables use in RF preamp stages up to ~30 MHz with stable gain margin.
R_JA	200°C/W - Defines thermal derating slope (5.0 mW/°C above 25°C ambient) for PCB layout cooling requirements.

Pinout & Package

Package: TO-92 (Case 29-11), Pb-free, through-hole mounting. Dimensions per ANSI Y14.5M: body height 4.45–5.20 mm, lead pitch 2.54 mm, emitter-base-collector pin spacing conforms to standard TO-92 footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink terminal; connects to ground or low-side return path in common-emitter configurations.
2	Base	Control input; requires ~100 mA base drive for full saturation at 1 A collector load.
3	Collector	Current source terminal; ties to positive supply or load high-side in switching topologies.

Key Features

Feature	Design Value
Pb-free TO-92 packaging	Complies with J-STD-609 Class 3 moisture sensitivity and RoHS Directive 2011/65/EU.
High f_T bandwidth	100 MHz enables stable small-signal amplification in IF stages of AM/FM receivers without external compensation.
Low V_CE(sat)	≤0.6 V reduces power loss to ≤600 mW at 1 A, critical for thermally constrained enclosure designs.
Wide SOA	Second-breakdown-limited safe operating area supports 1000 mA pulses at 25 V for ≥1 ms - suitable for inductive load snubbing.

Applications

DC-DC Converter Bias Circuit	Linear Voltage Regulator Pass Element
Use Scenario: Provides base drive to main power transistor in 24 V input, 5 V/1 A buck converter feedback loop. IC Role / Device Role / Timing Role: NPN amplifier stage translating error amplifier output into proportional base current for primary switch. Use Value: h_FE ≥ 50 ensures <10 mA base drive requirement at 1 A output, reducing quiescent current in control IC.	Use Scenario: Serves as series pass element in adjustable 3–24 V, 1 A linear regulator with external op-amp error amplifier. IC Role / Device Role / Timing Role: Current-controlled series regulator transistor dissipating up to 625 mW at full load. Use Value: V_CEO = 25 V and R_JA = 200°C/W allow operation with 15 V dropout at ambient ≤ 75°C without heatsink.
Relay Driver Stage	Audio Pre-amplifier Input Stage
Use Scenario: Switches 12 V, 500 mA coil relay in industrial PLC output module with opto-isolated input. IC Role / Device Role / Timing Role: Saturated-switch driver with fast turn-on/off (t_d/t_r ≤ 25/30 ns) minimizing contact bounce. Use Value: V_CE(sat) ≤ 0.6 V limits relay coil voltage drop to ≤0.6 V, ensuring reliable pull-in at 11.4 V minimum.	Use Scenario: First-stage low-noise amplifier in battery-powered portable audio mixer input channel. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with f_T = 100 MHz and NF ≤ 8 dB at R_S = 1 kΩ. Use Value: C_obo = 30 pF and f_T = 100 MHz support flat frequency response to 20 kHz with <0.1% THD at 100 mV input.

DC-DC Converter Bias Circuit

Linear Voltage Regulator Pass Element

Use Scenario: Provides base drive to main power transistor in 24 V input, 5 V/1 A buck converter feedback loop.

IC Role / Device Role / Timing Role: NPN amplifier stage translating error amplifier output into proportional base current for primary switch.

Use Value: h_FE ≥ 50 ensures <10 mA base drive requirement at 1 A output, reducing quiescent current in control IC.

Use Scenario: Serves as series pass element in adjustable 3–24 V, 1 A linear regulator with external op-amp error amplifier.

IC Role / Device Role / Timing Role: Current-controlled series regulator transistor dissipating up to 625 mW at full load.

Use Value: V_CEO = 25 V and R_JA = 200°C/W allow operation with 15 V dropout at ambient ≤ 75°C without heatsink.

Relay Driver Stage

Audio Pre-amplifier Input Stage

Use Scenario: Switches 12 V, 500 mA coil relay in industrial PLC output module with opto-isolated input.

IC Role / Device Role / Timing Role: Saturated-switch driver with fast turn-on/off (t_d/t_r ≤ 25/30 ns) minimizing contact bounce.

Use Value: V_CE(sat) ≤ 0.6 V limits relay coil voltage drop to ≤0.6 V, ensuring reliable pull-in at 11.4 V minimum.

Use Scenario: First-stage low-noise amplifier in battery-powered portable audio mixer input channel.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with f_T = 100 MHz and NF ≤ 8 dB at R_S = 1 kΩ.

Use Value: C_obo = 30 pF and f_T = 100 MHz support flat frequency response to 20 kHz with <0.1% THD at 100 mV input.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC547C	V_CEO = 45 V, I_C = 100 mA, h_FE = 420–800 - higher gain but lower current rating.	Not suitable for 1 A loads; limited to ≤100 mA switching or amplification.	Select BC547C only when gain >400 is required at sub-100 mA currents and 45 V standoff is needed.
MPSA06	V_CEO = 80 V, I_C = 500 mA, h_FE = 100 min - higher voltage rating, lower current capacity than MPS6601G.	Acceptable for 24 V systems with <500 mA loads; unsuitable for 1 A linear regulator pass use.	Choose MPSA06 where 80 V V_CEO is mandatory and load current stays below 500 mA.

Compared with BC547C and MPSA06, the MPS6601G uniquely balances 1 A current handling, 25 V V_CEO, and ≥50 h_FE in TO-92 - making it the only option among the three qualified for 1 A saturated switching and linear regulation without derating.

Availability

MPS6601G is available at Aetrix Electronics and suitable for industrial control modules, DC-DC converter bias networks, and linear regulator designs requiring stable component supply with Pb-free compliance and TO-92 through-hole compatibility.

Supply support for MPS6601G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The MPS6601G belongs to onsemi's legacy general-purpose bipolar transistor family, designed for cost-sensitive, medium-current linear amplification and switching in industrial and consumer power management systems.

FAQ

What is the maximum continuous collector current rating for the MPS6601G?

The MPS6601G is rated for 1000 mA continuous collector current at T_A = 25°C. Derating is required above 25°C ambient: 5.0 mW/°C for total device dissipation. At 75°C ambient, maximum usable I_C drops to approximately 750 mA assuming V_CE ≤ 0.6 V and no heatsink. This rating is validated per the Absolute Maximum Ratings table in the official MPS6601/D datasheet.

Is the MPS6601G pin-compatible with other TO-92 NPN transistors like the 2N2222A?

No, the MPS6601G is not pin-compatible with the 2N2222A. The MPS6601G follows the standard TO-92 emitter-base-collector (E-B-C) pinout (pin 1 = emitter, pin 2 = base, pin 3 = collector), while the 2N2222A uses collector-base-emitter (C-B-E) ordering. Swapping them without board revision will cause circuit failure. Always verify pinout using the "MARKING DIAGRAM" and "PIN 1. EMITTER" note in the MPS6601/D datasheet.

Does the MPS6601G meet RoHS and Pb-free requirements?

Yes, the MPS6601G is explicitly designated as Pb-free in the Ordering Information table of the MPS6601/D datasheet. It complies with J-STD-609 Class 3 and EU RoHS Directive 2011/65/EU. The "G" suffix denotes Pb-free packaging, and the device uses matte tin lead finish compatible with standard SnPb and lead-free soldering processes per onsemi's Soldering and Mounting Techniques Reference Manual.

What is the typical current gain (h_FE) of the MPS6601G at 500 mA collector current?

Per the ELECTRICAL CHARACTERISTICS table in the MPS6601/D datasheet, the MPS6601G guarantees h_FE ≥ 50 at I_C = 500 mA and V_CE = 1.0 V. Figure 3 confirms typical h_FE remains ≥ 70 across I_C = 100–500 mA at T_J = 25°C. This stable gain supports predictable base drive sizing in high-current switching designs without gain collapse.

Can the MPS6601G be used in audio amplifier circuits?

Yes, the MPS6601G is suitable for low-noise audio pre-amplifier input stages. Its noise figure is ≤ 8 dB at R_S = 1 kΩ and f = 1 kHz (Figure 11), and f_T = 100 MHz ensures wide bandwidth. When biased at I_C = 1–10 mA, it delivers low-distortion amplification up to 20 kHz. However, it is not recommended for high-power output stages due to its 625 mW power limit.

MPS6601G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 25 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 500mA, 1V

Power - Max:: 625 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

MPS6601G FAQ

1.How can I place an order for MPS6601G through Aetrix?

Please submit a Request for Quotation (RFQ) for MPS6601G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPS6601G reliable?

The price and inventory of MPS6601G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPS6601G is usually 5 days.

3.What payment methods are accepted for MPS6601G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPS6601G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPS6601G?

MPS6601G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPS6601G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPS6601G?

For technical support, including MPS6601G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPS6601G requirements.

6.How does Aetrix verify that MPS6601G is sourced from the original manufacturer or authorized distributors?

All MPS6601G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPS6601G meets industry standards.

7.What is the process for return or replacement of MPS6601G?

All MPS6601G units undergo pre-shipment inspection (PSI). If there is an issue with MPS6601G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPS6601G part is unused and in its original packaging.

Return procedure for MPS6601G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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