onsemi MPS6602

Overview

MPS6602 from onsemi is an NPN general-purpose amplifier transistor in TO-92 package, rated for 40 V_CEO, 1000 mA continuous collector current, and 625 mW power dissipation at T_A = 25°C. It delivers h_FE ≥ 50 at I_C = 100 mA, V_CE = 1.0 V, and f_T = 100 MHz, supporting linear amplification and medium-speed switching in industrial control interfaces.

For engineers reviewing the MPS6602 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO rating, DC current gain consistency across I_C = 100–1000 mA, saturation voltage under high drive (V_CE(sat) ≤ 0.6 V), thermal resistance (R_JA = 200°C/W), and Pb-free TO-92 compatibility for legacy board rework and RoHS-compliant production.

Technical Context

The MPS6602 operates as a silicon NPN bipolar junction transistor optimized for linear amplification and moderate-frequency switching. Its design supports stable h_FE over I_C = 100–1000 mA with V_CE = 1.0 V bias, and achieves 100 MHz f_T at I_C = 50 mA, V_CE = 10 V - confirming suitability for audio preamplifier stages and signal conditioning circuits.

Thermal performance is defined by R_JA = 200°C/W (PCB-mounted) and R_JC = 83.3°C/W, enabling operation up to +150°C junction temperature. Switching behavior includes t_d ≤ 25 ns, t_r ≤ 30 ns, t_s ≤ 250 ns, and t_f ≤ 50 ns under V_CC = 40 V, I_C = 500 mA conditions - indicating capability for <500 kHz pulse applications with controlled storage time.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), through-hole, Pb-free compliant, 3-pin plastic package with standard lead spacing (2.54 mm pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC337-40 and 2N2222A, the MPS6602 uniquely balances 40 V V_CEO, 1000 mA I_C, and guaranteed h_FE ≥ 50 at high current - making it optimal for cost-sensitive, high-reliability industrial switching where both current headroom and gain stability matter.

Availability

MPS6602 is available at Aetrix Electronics and suitable for industrial relay drivers, audio pre-amplifier stages, DC motor speed control, and LED current regulation requiring stable component supply, long-term manufacturability, and RoHS-compliant through-hole assembly.

Supply support for MPS6602 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS6602 belongs to onsemi's legacy general-purpose bipolar transistor product line, designed specifically for cost-effective, robust amplification and switching in industrial control, instrumentation, and power interface applications.

FAQ

What is the maximum collector-emitter voltage rating for the MPS6602?

The MPS6602 has a maximum collector-emitter voltage (V_CEO) rating of 40 Vdc, verified per the onsemi datasheet Rev. 4 (June 2006). This rating applies under specified test conditions (I_C = 1.0 mAdc, I_B = 0) and defines the absolute upper limit before avalanche breakdown occurs. Operating the MPS6602 above this voltage risks permanent device failure.

Does the MPS6602 support Pb-free soldering processes?

Yes, the MPS6602RLRAG variant is explicitly designated as Pb-free in the onsemi ordering information table and marked with the "G" suffix. It complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and supports standard reflow profiles for lead-free assembly, including peak temperatures up to 260°C.

What is the DC current gain (h_FE) of the MPS6602 at 500 mA collector current?

The MPS6602 guarantees h_FE ≥ 50 at I_C = 500 mAdc and V_CE = 1.0 Vdc, as stated in the "ON CHARACTERISTICS" section of the official datasheet. This minimum value is tested and binned - actual units typically exceed 70, but design margins must be based on the guaranteed 50.

Can the MPS6602 be used in switching applications above 100 kHz?

Yes, the MPS6602 supports switching up to ~500 kHz in practical implementations, supported by its documented switching times: t_d ≤ 25 ns, t_r ≤ 30 ns, t_s ≤ 250 ns, and t_f ≤ 50 ns under V_CC = 40 V, I_C = 500 mA. However, storage time (t_s) dominates at higher frequencies, so gate/base drive optimization is essential for reliable operation above 200 kHz.

What is the thermal resistance from junction to ambient (R_JA) for the MPS6602 in standard PCB mounting?

The MPS6602 has a thermal resistance R_JA of 200°C/W when soldered onto a typical printed circuit board, as measured per Note 1 in the Thermal Characteristics table. This value assumes a standard FR-4 board with 1 in² copper pour around the TO-92 leads; adding thermal relief or extra copper reduces R_JA proportionally.