onsemi MPS6602G

Overview

MPS6602G from onsemi is an NPN general-purpose amplifier transistor in TO-92 package, rated for 40 V_CEO, 1 A continuous collector current, and 625 mW power dissipation at T_A = 25°C. It delivers h_FE ≥ 50 at I_C = 100 mA, V_CE = 1.0 V, and supports switching applications with t_d ≤ 25 ns, t_r ≤ 30 ns, and f_T = 100 MHz - used in low-voltage DC-DC converter bias circuits and signal amplification stages.

For engineers reviewing the MPS6602G datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO rating, DC current gain consistency across I_C = 100–1000 mA, saturation voltage under high drive (V_CE(sat) ≤ 0.6 V), thermal resistance (R_JA = 200°C/W), and Pb-free TO-92 compliance for industrial assembly.

Technical Context

The MPS6602G is a silicon planar epitaxial NPN transistor optimized for linear amplification and medium-speed switching. Its design targets stable h_FE over I_C = 100–1000 mA and V_CE = 1.0 V, with guaranteed V_CE(sat) ≤ 0.6 V at I_C/I_B = 10 and V_BE(on) ≤ 1.2 V at I_C = 500 mA.

Thermal performance is defined by R_JA = 200°C/W (PCB-mounted) and R_JC = 83.3°C/W, supporting operation from −55°C to +150°C junction temperature. Switching behavior is characterized at V_CC = 40 V with fixed I_B1 = I_B2 = 50 mA and 300 ns duty cycle.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), Pb-free, through-hole mounting. Standard lead configuration with emitter (pin 1), base (pin 2), collector (pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with BC548B and MPSA18, the MPS6602G uniquely balances 40 V breakdown, 1 A current, and consistent h_FE across operating range - making it suitable for industrial-grade switching and amplification where both voltage headroom and current drive matter.

Availability

MPS6602G is available at Aetrix Electronics and suitable for industrial control systems, power supply feedback circuits, and sensor interface modules requiring stable component supply and Pb-free compliance.

Supply support for MPS6602G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS66xx family was designed as a cost-optimized, high-reliability line of general-purpose bipolar transistors targeting industrial automation, power conversion, and analog signal conditioning - with emphasis on robustness, thermal stability, and Pb-free manufacturability.

FAQ

What is the maximum collector-emitter voltage rating for MPS6602G?

The MPS6602G has a guaranteed V_CEO rating of 40 Vdc at I_C = 1.0 mA and I_B = 0. This rating allows safe operation in 36 V nominal systems with 10% margin, and is confirmed in the Absolute Maximum Ratings table of the official onsemi datasheet (MPS6601/D, Rev. 4).

Is MPS6602G suitable for switching applications, and what are its key timing parameters?

Yes, the MPS6602G is qualified for medium-speed switching: delay time t_d ≤ 25 ns, rise time t_r ≤ 30 ns, storage time t_s ≤ 250 ns, and fall time t_f ≤ 50 ns, measured at V_CC = 40 Vdc, I_C = 500 mAdc, and I_B1 = I_B2 = 50 mAdc. These values make MPS6602G appropriate for PWM-driven loads up to ~200 kHz.

What is the DC current gain (h_FE) specification for MPS6602G across its operating range?

The MPS6602G guarantees h_FE ≥ 50 at I_C = 100 mAdc, V_CE = 1.0 Vdc; ≥ 50 at I_C = 500 mAdc; and ≥ 30 at I_C = 1000 mAdc - all at T_A = 25°C. This progressive gain reduction reflects real-world behavior under increasing current stress and is documented in the Electrical Characteristics table.

Does MPS6602G have Pb-free packaging, and what does the 'G' suffix indicate?

Yes, the 'G' suffix in MPS6602G explicitly denotes Pb-free TO-92 packaging per onsemi's RoHS-compliant manufacturing standard. This is confirmed in the Ordering Information section (page 7) of the MPS6601/D datasheet, where MPS6602G is listed alongside other 'G' variants as Pb-free alternatives to standard MPS6602.

What thermal resistance values apply to MPS6602G in standard PCB mounting?

For MPS6602G mounted on a typical printed circuit board, the thermal resistance from junction-to-ambient (R_JA) is 200°C/W, and junction-to-case (R_JC) is 83.3°C/W. These values assume soldering per JEDEC standards and are specified in the Thermal Characteristics table (page 1) of the official datasheet.