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onsemi MPS6651G

Part No.:
MPS6651G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Long Body
Datasheet:
AetrixMPS6651G.pdf
Description:
TRANS PNP 25V 1A TO92
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,831

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Product details

Overview

MPS6651G from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power linear and digital circuits. It features VCEO = 25 V, IC = 1000 mA continuous, hFE ≥ 50 at IC = 100 mA, VCE(sat) ≤ 0.6 V at IC/IB = 10, and operates across −55 °C to +150 °C junction temperature. It is commonly used in discrete power supply control stages and relay drivers.

For engineers reviewing the MPS6651G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, TO-92 package layout, thermal derating guidance, switching timing data (td, tr, ts, tf), and validated alternative parts for design continuity and sourcing flexibility.

Technical Context

The MPS6651G is a silicon PNP BJT with fixed-emitter configuration and grounded-base operation capability. Its DC current gain (hFE) is specified at three collector current levels (100/500/1000 mA), and its fT = 100 MHz enables use in RF amplifier front-ends up to VHF band. The device exhibits negative voltage polarity conventions per PNP convention - VCE, VCB, and VEB are all rated as negative values.

Thermal performance is defined by RJA = 200 °C/W (PCB-mounted) and RJC = 83.3 °C/W, supporting operation up to 1.5 W at TC = 25 °C with linear derating. Safe Operating Area (SOA) curves confirm robustness under pulsed conditions up to 1 ms, with second-breakdown-limited boundaries validated at TC = 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 25 V - Maximum reverse-biased collector–emitter voltage before breakdown; defines usable headroom in PNP switch or amplifier stage.
IC (cont.) 1000 mA - Continuous collector current rating; supports load switching up to ~1 A with appropriate heatsinking.
hFE ≥50 at IC = 100 mA - Minimum DC current gain ensures reliable base drive sizing for saturation in switching applications.
VCE(sat) ≤0.6 V at IC/IB = 10 - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switches.
fT 100 MHz - Current-gain bandwidth product confirms suitability for VHF small-signal amplification and fast-switching logic interfaces.
RJC 83.3 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for >1 W dissipation in compact designs.
ts ≤250 ns - Storage time limits turn-off delay in saturated switching; critical for PWM frequency selection above ~100 kHz.

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), Pb-free, through-hole compatible. Dimensions per onsemi spec: 4.45–5.20 mm (L) × 4.32–5.33 mm (W) × 3.18–4.19 mm (H), lead pitch 2.54 mm.

Pin/Terminal Circuit Role Design Meaning
1 Collector Main current sink terminal; connected to most positive rail in PNP common-emitter configurations.
2 Base Control input; requires negative bias relative to emitter to forward-bias PNP junction and enable conduction.
3 Emitter Current source terminal; typically tied to system VCC or regulated supply in high-side switch topologies.

Key Features

Feature Design Value
Pb-free TO-92 packaging Complies with RoHS Directive 2011/65/EU; suitable for lead-free reflow and wave soldering processes.
Wide operating temperature range −55 °C to +150 °C junction rating supports deployment in automotive engine compartments and industrial motor controls.
Low VCE(sat) at high IC ≤0.6 V at 1 A enables <1 W conduction loss in 12 V systems, reducing thermal management burden.
Validated SOA curves Published Safe Operating Area plots allow precise pulse-width and voltage margining without secondary breakdown risk.
100 MHz fT Supports stable small-signal amplification up to 30 MHz with gain margin, verified at VCE = −10 V, IC = −50 mA.

Applications

DC Power Supply Regulation Industrial Relay Driver

Use Scenario: Discrete pass transistor in linear regulator feedback loop controlling 5–24 V output rails.

IC Role / Device Role / Timing Role: PNP emitter-follower configured as current amplifier to boost op-amp output drive into series pass element.

Use Value: VCEO = 25 V and IC = 1 A support regulation of 20 V inputs with 2 V dropout; low VCE(sat) maintains efficiency above 90% at full load.

Use Scenario: High-side driver for 12 V/24 V electromagnetic relays in PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated PNP switch turning relay coil on/off via microcontroller GPIO with inverted logic.

Use Value: hFE ≥ 50 ensures <20 mA base drive suffices for 500 mA coil current; ts ≤ 250 ns allows reliable 1 kHz PWM control without contact chatter.

Audio Signal Amplifier Stage Automotive Lamp Dimming Circuit

Use Scenario: Class-A preamplifier stage in analog audio signal path with ±15 V rails.

IC Role / Device Role / Timing Role: Common-emitter PNP amplifier biased at IC = 10 mA for low-noise, low-distortion gain.

Use Value: fT = 100 MHz provides >20 dB gain margin at 20 kHz; VBE(on) ≤ 1.2 V ensures predictable bias point stability over temperature.

Use Scenario: PWM-controlled tail-light dimming in 12 V automotive body electronics.

IC Role / Device Role / Timing Role: High-side switch modulating LED string current using MCU-generated 100–500 Hz PWM.

Use Value: RJC = 83.3 °C/W and TJ(max) = 150 °C permit 800 mA continuous current with minimal heatsink; SOA curves validate 100% duty cycle at 12 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MPS6652G VCEO = 40 V (vs. 25 V), VCBO = 30 V (vs. 25 V), same TO-92 package and pinout. Higher voltage headroom enables use in 36 V automotive systems or 24 V industrial supplies with transient margins. Select MPS6652G when VIN exceeds 25 V or when design requires enhanced avalanche ruggedness.
BC807-40 SMD SOT-23 package (vs. TO-92), hFE = 250–630 (vs. min. 50), IC = 500 mA (vs. 1000 mA). Smaller footprint and higher gain suit space-constrained PCBs but require derated current handling and different layout. Choose BC807-40 for automated assembly and lower base drive requirements; verify thermal performance at 500 mA.

Compared with MPS6651G, MPS6652G offers higher voltage ratings in identical through-hole form factor, while BC807-40 trades package size and gain for reduced current capacity and surface-mount compatibility - both require layout or thermal reassessment if substituted.

Availability

MPS6651G is available at Aetrix Electronics and suitable for industrial relay drivers, linear power supply regulation, audio preamplifiers, and automotive lamp dimming circuits requiring stable component supply and long-term obsolescence management.

Supply support for MPS6651G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS66xx family was engineered as cost-optimized, high-reliability general-purpose BJTs targeting discrete amplifier, switching, and interface functions in legacy and new-design industrial control systems.

FAQ

What is the maximum continuous collector current rating for the MPS6651G?

The MPS6651G has a maximum continuous collector current (IC) rating of 1000 mA at TA = 25 °C. Derating applies above 25 °C at 5.0 mW/°C for ambient-mounted operation or 12 mW/°C when case-temperature referenced. This rating is validated under standard TO-92 PCB mounting conditions per onsemi's thermal test methodology.

Does the MPS6651G support Pb-free soldering processes?

Yes, the MPS6651G is manufactured in a Pb-free TO-92 package compliant with RoHS Directive 2011/65/EU. It supports standard lead-free reflow profiles (peak ≤ 260 °C) and wave soldering per onsemi's Soldering and Mounting Techniques Reference Manual (SOLDERRM/D). No special prebake or flux requirements are needed beyond typical Pb-free process guidelines.

What is the pin configuration of the MPS6651G in its TO-92 package?

The MPS6651G uses TO-92 Case 29-11 Style 17 pinout: Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter. This matches the standard PNP orientation shown in onsemi's mechanical drawings and differs from NPN variants like MPS6601 (Style 1: E-B-C). Correct orientation is critical to avoid reverse-bias damage during PCB layout and assembly.

How does the MPS6651G compare to the MPS6652G in terms of voltage ratings?

The MPS6651G has VCEO = 25 V and VCBO = 25 V, whereas the MPS6652G specifies VCEO = 40 V and VCBO = 30 V - both share identical TO-92 packaging, pinout, and thermal specs. This makes MPS6652G a drop-in upgrade for designs needing higher voltage margin without layout changes, though it is not a functional substitute where 25 V rating is intentionally leveraged for cost or safety isolation.

Is the MPS6651G suitable for RF amplifier applications?

Yes, the MPS6651G has an fT of 100 MHz and verified small-signal gain up to 30 MHz, making it suitable for VHF-band RF amplification in low-power transceivers and signal conditioning stages. Its Cobo = 30 pF and consistent hFE vs. frequency response (per Figure 5) support stable 50 Ω impedance matching; however, it is not characterized for >100 MHz operation or broadband noise figure.

MPS6651G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Long Body
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 500mA, 1V
Power - Max:
625 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92 (TO-226)

MPS6651G FAQ

1.How can I place an order for MPS6651G through Aetrix?

Please submit a Request for Quotation (RFQ) for MPS6651G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPS6651G reliable?

The price and inventory of MPS6651G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPS6651G is usually 5 days.

3.What payment methods are accepted for MPS6651G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPS6651G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPS6651G?

MPS6651G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPS6651G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPS6651G?

For technical support, including MPS6651G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPS6651G requirements.

6.How does Aetrix verify that MPS6651G is sourced from the original manufacturer or authorized distributors?

All MPS6651G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPS6651G meets industry standards.

7.What is the process for return or replacement of MPS6651G?

All MPS6651G units undergo pre-shipment inspection (PSI). If there is an issue with MPS6651G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPS6651G part is unused and in its original packaging.

Return procedure for MPS6651G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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