onsemi MPS6652G

Overview

MPS6652G from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power linear and digital circuits. It features a 40 V collector-emitter breakdown voltage (V_CEO), 1 A continuous collector current (I_C), 1.5 W total device dissipation at T_C = 25°C, DC current gain (h_FE) of ≥30 at I_C = 1000 mA, and 100 MHz transition frequency (f_T). It is commonly used in discrete amplifier stages, relay drivers, and power supply control circuits.

For engineers reviewing the MPS6652G datasheet, pinout, applications, or equivalent options, this page provides verified electrical specifications, TO-92 package details, thermal performance data, switching timing characteristics, and validated alternative parts - all confirmed against onsemi's official MPS66xy family documentation (Rev. 6, March 2026).

Technical Context

The MPS6652G operates as a silicon PNP BJT with negative-polarity voltage and current ratings per onsemi's standard convention. Its safe operating area (SOA) is defined up to 40 V and 1 A under pulsed conditions, with second breakdown limits validated at T_C = 25°C. Thermal resistance from junction-to-case is 83.3°C/W, enabling direct heatsink mounting for higher-power operation.

It delivers switching performance with 25 ns delay time (t_d), 30 ns rise time (t_r), 250 ns storage time (t_s), and 50 ns fall time (t_f) under V_CC = −40 V, I_C = −500 mA, and I_B1 = I_B2. Small-signal parameters include 30 pF output capacitance (C_obo) and 100 MHz f_T, supporting audio-frequency and low-speed digital switching applications.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 17), Pb-free, through-hole mounting. Dimensions conform to onsemi mechanical drawing 98ASB42022B, with lead pitch 2.54 mm and overall height ≤4.5 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT switching and amplification applications.

Compared with MPS6652G, MMBT6520LT1G offers surface-mount convenience but sacrifices 70% of power handling and 25% voltage margin, while BC807-40,215 trades current capacity for higher DC gain - making MPS6652G the only option among the three supporting 1 A loads at 40 V in through-hole format.

Availability

MPS6652G is available at Aetrix Electronics and suitable for relay driver circuits, linear regulator pass elements, audio amplifier stages, and power supply enable controls requiring stable component supply across industrial, instrumentation, and embedded OEM programs.

Supply support for MPS6652G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS66xy family - including MPS6652G - was developed as a cost-optimized, high-reliability line of general-purpose PNP/NPN transistors targeting discrete amplifier, switching, and interface functions in legacy and new-design industrial electronics.

FAQ

What is the maximum collector-emitter voltage rating for MPS6652G?

The MPS6652G has a guaranteed minimum collector-emitter breakdown voltage (V_(BR)CEO) of 40 Vdc at I_C = 1.0 mA and I_B = 0, as specified in onsemi's official datasheet (Rev. 6). This rating applies under DC conditions and defines the absolute maximum voltage the device can withstand between collector and emitter with base open before avalanche conduction begins. Operating continuously near this limit requires derating per thermal constraints.

Is MPS6652G RoHS-compliant and what does the 'G' suffix indicate?

Yes, MPS6652G is RoHS-compliant. The 'G' suffix explicitly denotes a Pb-free (lead-free) TO-92 package per onsemi's ordering nomenclature, confirmed in the "ORDERING INFORMATION" section of the datasheet. It uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard through-hole assembly processes.

What is the DC current gain (h_FE) of MPS6652G at full rated current?

At I_C = 1000 mAdc and V_CE = −1.0 Vdc, the MPS6652G guarantees h_FE ≥ 30, as stated in the "ELECTRICAL CHARACTERISTICS" table. This minimum value ensures predictable base drive requirements for saturation in high-current switching applications - for example, requiring ≤33 mA base current to sustain 1 A collector current.

Can MPS6652G be used in audio amplifier designs?

Yes, MPS6652G is suitable for discrete audio amplifier stages, particularly in Class-A or AB preamplifier configurations. Its 100 MHz f_T, low noise figure (measured at 1–10 kHz), and linear h_FE vs. I_C behavior (per Figure 4) support clean mid-band amplification. Designers should maintain V_CE > 2 V and avoid deep saturation to preserve linearity, as confirmed by the saturation region curves in Figure 20.

What is the thermal resistance from junction to case (R_θJC) for MPS6652G?

The MPS6652G has a maximum thermal resistance of 83.3°C/W from junction to case (R_θJC), measured under standardized test conditions per onsemi's thermal characterization. This value enables accurate junction temperature estimation when the device is mounted to an external heatsink or copper pour, assuming good thermal interface and mechanical contact - critical for reliability in sustained 1 A operation.