onsemi MPS6652RLRAG
- Part No.:
- MPS6652RLRAG
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Datasheet:
-
MPS6652RLRAG.pdf
- Description:
- TRANS PNP 40V 1A TO92
- Quantity:
- Payment:

- Shipping:

Inventory:6,493
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Product details
Overview
MPS6652RLRAG from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power linear and digital circuits, with VCEO = 40 V, IC = 1000 mA continuous, and hFE ≥ 30 at IC = 1000 mA. It operates across −55 °C to +150 °C and is commonly used in relay drivers, power supply control stages, and discrete logic interface circuits.
For engineers reviewing the MPS6652RLRAG datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92 package thermal performance (RθJC = 83.3 °C/W), saturation voltage (VCE(sat) ≤ 0.6 V at IC/IB = 10), and compatibility with lead-free reflow processes.
Technical Context
This PNP transistor features a silicon planar epitaxial structure optimized for stable DC current gain (hFE) across collector currents from 10 mA to 1000 mA, with guaranteed minimum hFE = 30 at high-current saturation conditions (IC = 1000 mA, VCE = 1.0 V). Its fT = 100 MHz enables use in medium-frequency amplifier stages up to ~30 MHz.
Thermal design is supported by validated junction-to-case resistance (RθJC = 83.3 °C/W) and junction-to-ambient resistance (RθJA = 200 °C/W on standard PCB), while safe operating area (SOA) curves confirm capability for pulsed switching with VCC = −40 V and IC up to −1 A under defined duty cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum allowable collector-emitter voltage before breakdown; defines upper rail limit in PNP switch or amplifier stage. |
| IC (continuous) | 1000 mA - Continuous collector current rating; supports load switching up to ~1 A with appropriate base drive and heatsinking. |
| VCE(sat) | ≤ 0.6 V at IC = 1000 mA, IB = 100 mA - Low saturation voltage minimizes conduction loss and self-heating in switching applications. |
| hFE | ≥ 30 at IC = 1000 mA, VCE = 1.0 V - Confirmed DC current gain at full rated current; ensures reliable base drive sizing for saturated switching. |
| fT | 100 MHz - Current-gain bandwidth product; supports small-signal amplification up to ~30 MHz with usable gain margin. |
| RθJC | 83.3 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink or metal chassis for thermal management. |
| TJ range | −55 °C to +150 °C - Extended junction temperature range supports operation in automotive under-hood and industrial control environments. |
Pinout & Package
Package: TO-92 (Case 29-11, Style 17), Pb-free, through-hole compatible. Dimensions per onsemi specification: 4.45–5.20 mm (L) × 4.32–5.33 mm (W) × 3.18–4.19 mm (H), with bent leads for tape-and-reel (RLRA) orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current sink terminal; connected to most positive rail in PNP common-emitter configuration; requires robust trace routing for 1 A paths. |
| 2 | Base | Control input; requires current-limited drive (typically 10–100 mA) to achieve full saturation; polarity is negative relative to emitter. |
| 3 | Collector | Output terminal; tied to load and ground reference; reverse voltage polarity versus NPN devices (collector more negative than emitter). |
Key Features
| Feature | Design Value |
|---|---|
| PNP polarity with negative voltage/current convention | Enables complementary use with NPN devices like MPS6601 in push-pull or differential pair topologies without signal inversion logic. |
| Pb-free TO-92 package | Complies with RoHS Directive 2011/65/EU and supports lead-free reflow soldering profiles (peak ≤ 260 °C). |
| Guaranteed hFE ≥ 30 at IC = 1000 mA | Reduces required base drive current and simplifies driver circuit design for high-current switching applications. |
| VCEO = 40 V rating | Supports 24 V and 36 V industrial control rails with 2× safety margin, eliminating need for external clamping in many cases. |
| Low VCE(sat) ≤ 0.6 V | Limits power dissipation to ≤ 600 mW at 1 A, easing thermal design versus higher-Vsat alternatives. |
Applications
| Relay Driver Stage | Linear Voltage Regulator Pass Element |
|---|---|
Use Scenario: Driving 12 V or 24 V electromagnetic relays requiring 50–150 mA coil current in PLC I/O modules. IC Role / Device Role / Timing Role: PNP switch configured in common-emitter mode, sinking relay coil current to ground when base is pulled low. Use Value: VCEO = 40 V withstands relay coil flyback transients; low VCE(sat) ensures <100 mW dissipation during sustained activation. |
Use Scenario: As the series pass transistor in adjustable linear regulators delivering up to 800 mA output current. IC Role / Device Role / Timing Role: PNP emitter-follower configured to regulate output voltage via feedback-controlled base bias. Use Value: hFE ≥ 30 at high current ensures stable loop gain; TJ range supports operation in enclosed enclosures up to 70 °C ambient. |
| DC Motor Direction Control (Half-Bridge) | Discrete Logic Level Shifter |
Use Scenario: Upper-side switch in half-bridge motor driver for 12 V brushed DC motors in HVAC actuators or industrial valves. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor voltage rail; paired with N-channel MOSFET or NPN low-side switch. Use Value: RθJC = 83.3 °C/W allows direct heatsinking to chassis; SOA curves validate 100 ms pulse capability at −40 V/−1 A. |
Use Scenario: Translating 3.3 V logic signals to 5 V or 12 V levels in mixed-voltage microcontroller interfaces. IC Role / Device Role / Timing Role: PNP inverter/level shifter with emitter tied to target rail, base driven by MCU GPIO, collector open-drain output. Use Value: fT = 100 MHz supports clean edge transitions up to 10 Mbps; guaranteed VBE(on) ≤ 1.2 V ensures reliable turn-on with 3.3 V drive. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP BJT switching and amplification applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT6517LT1G | SOT-23 package (smaller footprint, lower IC = 500 mA, VCEO = 30 V) | Not suitable for 1 A loads or 40 V rails; limited thermal mass for sustained conduction. | Select only for space-constrained, lower-power designs where TO-92 mounting is impractical. |
| BC807-40,215 | SOT-23 package, hFE = 250–600 (much higher gain), IC = 500 mA, VCEO = 45 V | Higher gain reduces base drive requirements but limits switching speed due to stored charge; not rated for 1 A continuous. | Prefer for low-base-drive, medium-speed applications; avoid where 1 A continuous current or low VCE(sat) is critical. |
Compared with MMBT6517LT1G and BC807-40,215, the MPS6652RLRAG uniquely balances 1 A continuous current, 40 V VCEO, low 0.6 V saturation, and TO-92 manufacturability-making it optimal for cost-sensitive, thermally demanding industrial switching where SOT-23 alternatives fall short on current or thermal capability.
Availability
MPS6652RLRAG is available at Aetrix Electronics and suitable for relay drivers, linear regulator pass elements, and discrete level shifters requiring stable component supply, long-term obsolescence mitigation, and RoHS-compliant through-hole assembly.
Supply support for MPS6652RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MPS66xx family-including MPS6652RLRAG-is part of onsemi's legacy discrete transistor portfolio designed for high-reliability, cost-optimized general-purpose amplification and switching in industrial controls, power supplies, and legacy-compatible designs.
FAQ
What is the maximum continuous collector current rating for MPS6652RLRAG?
The MPS6652RLRAG is rated for 1000 mA (1 A) continuous collector current at TA = 25 °C. Derating applies above 25 °C per the datasheet's 5.0 mW/°C thermal derating curve for ambient operation, or 12 mW/°C for case-mounted thermal management. This rating assumes proper PCB copper area and airflow per onsemi's TO-92 layout guidelines.
Is MPS6652RLRAG a PNP or NPN transistor?
MPS6652RLRAG is a PNP bipolar junction transistor. Its electrical characteristics-including negative voltage and current conventions, VCEO = −40 V (absolute value 40 V), and emitter-connected high-side configuration-are explicitly defined for PNP operation in the onsemi datasheet. It is functionally complementary to the NPN MPS6601.
What package type does MPS6652RLRAG use, and is it RoHS compliant?
MPS6652RLRAG uses the TO-92 (Case 29-11, Style 17) through-hole package with bent leads and tape-and-reel packaging (RLRA designation). It is Pb-free and RoHS compliant, meeting EU Directive 2011/65/EU, with soldering profiles validated per onsemi's Pb-free reflow guidelines (peak temperature ≤ 260 °C).
What is the typical DC current gain (hFE) of MPS6652RLRAG at 1 A collector current?
At IC = 1000 mA and VCE = 1.0 V, the MPS6652RLRAG guarantees hFE ≥ 30. The datasheet shows typical hFE ≈ 40–50 under those conditions, with variation across the −55 °C to +150 °C junction temperature range. This minimum gain ensures predictable base drive requirements in saturated switching applications.
Can MPS6652RLRAG be used in switching applications, and what are its key timing parameters?
Yes, MPS6652RLRAG is qualified for switching use. Key timing parameters at VCC = −40 V, IC = −500 mA, and IB1 = IB2 = −50 mA include delay time td ≤ 25 ns, rise time tr ≤ 30 ns, storage time ts ≤ 250 ns, and fall time tf ≤ 50 ns. These values reflect its suitability for medium-speed digital switching up to ~1–2 MHz repetition rates.
MPS6652RLRAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 50 @ 500mA, 1V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
MPS6652RLRAG FAQ
1.How can I place an order for MPS6652RLRAG through Aetrix?
Please submit a Request for Quotation (RFQ) for MPS6652RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MPS6652RLRAG reliable?
The price and inventory of MPS6652RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPS6652RLRAG is usually 5 days.
3.What payment methods are accepted for MPS6652RLRAG?
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4.How is shipping managed for MPS6652RLRAG?
MPS6652RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MPS6652RLRAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MPS6652RLRAG?
For technical support, including MPS6652RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPS6652RLRAG requirements.
6.How does Aetrix verify that MPS6652RLRAG is sourced from the original manufacturer or authorized distributors?
All MPS6652RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPS6652RLRAG meets industry standards.
7.What is the process for return or replacement of MPS6652RLRAG?
All MPS6652RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with MPS6652RLRAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MPS6652RLRAG part is unused and in its original packaging.
Return procedure for MPS6652RLRAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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