onsemi MPS6725G

Overview

MPS6725G from onsemi is an NPN silicon Darlington transistor in a TO-92 package, rated for 50 V_CEO, 1 A continuous collector current, and 1.0 W dissipation at T_A = 25°C. It delivers high DC current gain (h_FE = 4,000–40,000 at I_C = 1 A), low V_CE(sat) ≤ 1.5 V, and operates across −55°C to +150°C junction temperature - used in relay drivers, lamp dimmers, and low-frequency switching power stages.

For engineers reviewing the MPS6725G datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) limits, thermal resistance (R_JA = 125°C/W), V_BE(on) ≤ 2.0 V, f_T up to 1000 MHz, and Pb-free TO-92 mechanical compatibility with legacy board layouts.

Technical Context

The MPS6725G integrates two cascaded NPN transistors in a monolithic Darlington configuration, enabling high current amplification with minimal base drive. Its design supports linear and saturated switching modes, with guaranteed V_(BR)CES = 50 V and V_(BR)CBO = 60 V under specified test conditions.

Thermal performance is defined by R_JC = 50°C/W and R_JA = 125°C/W, requiring careful PCB copper area planning for sustained 1 A operation. The device exhibits C_cb ≤ 10 pF and f_T ≥ 100 MHz at I_C = 200 mA, confirming suitability for audio-frequency and low-speed digital switching - not RF or high-speed logic.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-10, Style 1), Pb-free, through-hole mounting. Dimensions comply with JEDEC TO-226 standard; lead spacing 0.1 inch, body height ~4.5 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with MPS6725 and ULN2003A, the MPS6725G offers certified Pb-free compliance in a proven TO-92 form factor while retaining full 1 A capability - making it optimal for new industrial designs requiring both regulatory alignment and discrete high-current switching headroom.

Availability

MPS6725G is available at Aetrix Electronics and suitable for relay drivers, lamp dimmers, DC motor speed control, and industrial sensor interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for MPS6725G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS6725G belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability discrete switching and amplification in industrial control, appliance, and power management systems.

FAQ

What is the maximum continuous collector current rating for MPS6725G?

The MPS6725G is rated for 1000 mA (1 A) continuous collector current at T_A = 25°C. Derating is required above this temperature - 8 mW/°C for ambient operation and 20 mW/°C for case-mounted thermal management. Actual usable current depends on PCB copper area, airflow, and V_CE drop in the application.

Does MPS6725G have built-in protection features like clamp diodes or thermal shutdown?

No, the MPS6725G is a bare Darlington transistor without integrated protection. It lacks internal clamp diodes, ESD protection, or thermal shutdown circuitry. External flyback diodes must be added for inductive loads, and thermal monitoring is required for sustained high-current operation.

Can MPS6725G replace MPS6724G in existing designs?

MPS6725G can replace MPS6724G only if the higher 50 V_CEO and 60 V_CBO ratings are acceptable - but not vice versa. The MPS6724G has lower voltage ratings (40 V_CEO, 50 V_CBO) and identical package/pinout. Substitution requires verification that system voltage transients remain within MPS6724G limits.

What is the typical base-emitter on voltage (V_BE(on)) for MPS6725G at full load?

The MPS6725G exhibits V_BE(on) ≤ 2.0 V at I_C = 1000 mA and V_CE = 5.0 V. This reflects the stacked base-emitter junctions of the Darlington pair, requiring higher base drive voltage than a single transistor - critical for ensuring full saturation in 3.3 V or 5 V logic-driven circuits.

Is MPS6725G suitable for high-frequency switching applications above 1 MHz?

No, the MPS6725G is not optimized for high-frequency switching. While its f_T reaches 1000 MHz under small-signal conditions, its SOA and switching times (t_on/t_off not specified) limit practical use to ≤100 kHz. For >1 MHz operation, MOSFETs or RF-optimized transistors are recommended instead of MPS6725G.