onsemi MPS8598RLRAG

Overview

MPS8598RLRAG from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power analog and digital circuits. It features V_CEO = −60 V, I_C = −500 mA, h_FE = 100–300 (at I_C = 1.0 mA), V_CE(sat) = −0.4 V (at I_C = 100 mA, I_B = 5 mA), and f_T = 150 MHz - enabling use in audio preamplifiers, level shifters, and discrete logic interface stages.

For engineers reviewing the MPS8598RLRAG datasheet, pinout, applications, or equivalent options, this device is evaluated for linear gain stability across −55°C to +150°C, low-saturation switching in TO-92-based control circuits, and compatibility with Pb-free reflow profiles per J-STD-020.

Technical Context

The MPS8598RLRAG operates as a medium-speed PNP BJT with fixed-emitter configuration and grounded-base or common-emitter biasing. Its f_T = 150 MHz and C_ibo = 30 pF (at V_EB = 0.5 V) support stable small-signal amplification up to ~50 MHz in tuned or broadband stages. Thermal resistance R_JA = 200°C/W (PCB-mounted) and R_JC = 83.3°C/W define its power derating envelope under continuous DC or pulsed operation.

Electrical behavior follows standard Ebers-Moll modeling: V_BE(on) ranges from −0.5 V to −0.8 V (depending on I_C), while V_CE(sat) remains ≤ −0.4 V at I_C/I_B = 20. Safe operating area (SOA) curves confirm capability for I_C = −100 mA at V_CE = −20 V in DC mode, with second-breakdown limits constraining high-voltage, high-current pulse operation.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), Pb-free, through-hole compatible. Dimensions per ANSI Y14.5M: body height ≤ 5.20 mm, lead pitch 2.54 mm, emitter-base-collector pinout aligned to standard orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT amplification and switching applications.

Compared with MPS8598RLRA and BC807-40,215, the MPS8598RLRAG uniquely combines Pb-free TO-92 through-hole compatibility, −60 V breakdown margin, and 150 MHz f_T, making it optimal for cost-sensitive, thermally managed, and RoHS-compliant through-hole designs requiring higher voltage headroom than SOT-23 alternatives.

Availability

MPS8598RLRAG is available at Aetrix Electronics and suitable for audio signal conditioning, industrial level-shifting interfaces, and medical sensor power sequencing requiring stable component supply and full RoHS compliance.

Supply support for MPS8598RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS8598RLRAG belongs to onsemi's general-purpose bipolar transistor product line, engineered for robust performance in cost-sensitive, high-volume linear and switching applications where reliability across extended temperature ranges is critical.

FAQ

What is the maximum collector-emitter voltage rating for MPS8598RLRAG?

The MPS8598RLRAG has a maximum collector-emitter voltage (V_CEO) rating of −60 VDC. This value is specified under test conditions of I_C = 10 mA and I_B = 0, and represents the highest reverse-biased voltage the device can withstand before breakdown. Exceeding −60 V risks permanent damage, and design margins should maintain operation below −50 V in production systems using MPS8598RLRAG.

Does MPS8598RLRAG support Pb-free reflow soldering?

Yes, MPS8598RLRAG is a Pb-free device packaged in a TO-92 outline compliant with J-STD-020 moisture sensitivity and reflow requirements. Its marking includes "G" suffix per ordering nomenclature, and thermal profile validation confirms compatibility with standard lead-free reflow cycles peaking at 260°C. No special flux or process adjustments are needed when assembling MPS8598RLRAG onto PCBs.

What is the typical DC current gain (h_FE) of MPS8598RLRAG at 10 mA collector current?

At I_C = −10 mA and V_CE = −5.0 V, the MPS8598RLRAG exhibits h_FE = 100–300 per datasheet specifications. This range reflects production lot variation and ensures predictable base drive calculation - for example, achieving −10 mA collector current requires −0.033 mA to −0.1 mA base current depending on unit-specific gain. Designers should verify bias networks across this span when using MPS8598RLRAG.

Can MPS8598RLRAG be used in common-base amplifier configurations?

Yes, MPS8598RLRAG supports common-base operation, with verified small-signal parameters including C_obo = 8.0 pF and f_T = 150 MHz at I_C = −10 mA. Its low input capacitance (C_ibo = 30 pF) and high output impedance make it suitable for broadband RF amplifiers or cascode stages where isolation and bandwidth are prioritized. The MPS8598RLRAG pinout (Emitter=1, Base=2, Collector=3) aligns directly with standard common-base PCB layouts.

What is the thermal resistance junction-to-ambient (R_JA) for MPS8598RLRAG on a standard PCB?

The MPS8598RLRAG has a specified R_JA of 200°C/W when mounted on a typical FR-4 printed circuit board with minimum copper pour. This value assumes the device is soldered per JEDEC standards and operated in still air. At 500 mW dissipation, junction temperature rise would be 100°C above ambient - so for T_J(max) = +150°C, maximum safe ambient is +50°C unless additional copper or airflow is applied. Derating by 5.0 mW/°C above 25°C is mandatory per datasheet guidelines for MPS8598RLRAG.