onsemi MPS8599

Overview

MPS8599 from onsemi is a general-purpose PNP bipolar junction transistor (BJT) in TO-92 package, rated for V_CEO = 80 V, I_C = 500 mA, and P_D = 625 mW at T_A = 25°C, with h_FE ≥ 75 at I_C = 100 mA and V_CE = 5 V, used in low-frequency switching and linear amplification circuits such as power supply control stages and discrete logic inverters.

For engineers reviewing the MPS8599 datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, 80 V V_CEO rating, 500 mA continuous collector current capability, TO-92 mechanical compatibility, and verified h_FE performance across −55°C to +150°C junction temperature range.

Technical Context

The MPS8599 operates as a medium-power PNP BJT with fixed emitter-base and collector-base junction polarities requiring negative biasing relative to emitter. Its safe operating area (SOA) is defined by thermal, current, and second-breakdown limits up to 10% duty cycle, and it exhibits f_T = 150 MHz at I_C = 10 mA and V_CE = 5 V.

Electrical behavior is characterized by V_BE(on) = 0.6–0.8 V at I_C = 10 mA, V_CE(sat) ≤ 0.4 V at I_C = 100 mA / I_B = 5 mA, and C_obo = 8.0 pF and C_ibo = 30 pF at specified test conditions, supporting stable operation in audio preamplifier and relay driver topologies.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), epoxy-molded plastic with 3 leads; lead finish is Pb-free per ordering suffix 'G' (MPS8599RLRMG).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC557B and PN2907A, the MPS8599 uniquely balances 80 V breakdown, 500 mA current, and 150 MHz f_T in a standard TO-92 outline-making it optimal for industrial power control and mixed-signal interfacing where both voltage headroom and bandwidth matter.

Availability

MPS8599 is available at Aetrix Electronics and suitable for DC power supply regulation, relay/solenoid drivers, discrete logic level shifting, and audio pre-amplifier stages requiring stable component supply, long-term obsolescence resilience, and RoHS-compliant manufacturing.

Supply support for MPS8599 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPS8599 belongs to onsemi's legacy general-purpose bipolar transistor family designed for cost-sensitive, high-reliability discrete applications including power conversion, interface buffering, and analog signal conditioning in harsh environments.

FAQ

What is the maximum collector-emitter voltage rating for the MPS8599?

The MPS8599 has a maximum collector-emitter voltage (V_CEO) rating of 80 Vdc, verified under test condition I_C = 10 mA and I_B = 0. This rating defines the upper limit for reverse-biased voltage across the collector and emitter terminals before breakdown occurs, making the MPS8599 suitable for use in 48 V and 60 V DC power systems where voltage transients may reach 80 V peak.

Is the MPS8599 a PNP or NPN transistor?

The MPS8599 is a PNP bipolar junction transistor, confirmed by its negative voltage polarity conventions (e.g., V_CEO, V_CBO ratings are specified as negative values in datasheet tables), emitter-base forward bias requirement, and pinout configuration (Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector). This polarity makes the MPS8599 appropriate for high-side switching and complementary pair designs with NPN counterparts like MPS8099.

What package type does the MPS8599 use, and is it RoHS compliant?

The MPS8599 uses the TO-92 package (Case 29-11, Style 1), a standard through-hole plastic package with three leads. The ordering variant MPS8599RLRMG explicitly denotes Pb-free (RoHS-compliant) construction, verified per onsemi's Pb-Free Packaging Specification and aligned with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly compatibility.

What is the DC current gain (h_FE) range for the MPS8599 at 100 mA collector current?

The MPS8599 exhibits a DC current gain (h_FE) range of 75 to 300 when tested at I_C = 100 mA and V_CE = 5 Vdc, per the Electrical Characteristics table in the official datasheet. This gain range ensures predictable base drive requirements for saturation in switching applications and sufficient linearity for analog amplification tasks across production lots.

Can the MPS8599 be used in high-frequency amplifier circuits?

Yes, the MPS8599 supports high-frequency amplifier use with a current-gain–bandwidth product (f_T) of 150 MHz measured at I_C = 10 mA and V_CE = 5 Vdc. This specification confirms stable small-signal amplification up to approximately 20–30 MHz in practical designs, making the MPS8599 suitable for RF pre-amplifiers, oscillator buffers, and broadband audio stages where gain and bandwidth trade-offs are managed within its SOA limits.