onsemi MPS8599G

Overview

MPS8599G from ON Semiconductor is a PNP general-purpose amplifier transistor in TO-92 (CASE 29–11) package, rated for V_CEO = 80 V, I_C = 500 mA, and P_D = 1.5 W at T_C = 25°C. It delivers h_FE = 75–300 at I_C = 100 mA, V_CE = 5 V, and exhibits V_CE(sat) ≤ 0.4 V at I_C = 100 mA / I_B = 5 mA - suited for linear amplification and switching in low-to-medium power analog circuits.

For engineers reviewing the MPS8599G datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V V_CEO, 1.5 W case-rated dissipation, PNP polarity with verified f_T = 150 MHz, and TO-92 mechanical compatibility in discrete bias networks, audio preamp stages, and relay drivers.

Technical Context

The MPS8599G is a silicon planar epitaxial PNP transistor optimized for high-current linear amplification and fast-switching operation. Its design supports stable DC current gain across I_C = 1–100 mA with minimal thermal drift, and it maintains safe operating area (SOA) compliance up to 80 V/500 mA under pulsed conditions per Figure 10.

It features low output capacitance (C_obo = 8.0 pF) and input capacitance (C_ibo = 30 pF) at V_CB = 5 V and V_EB = 0.5 V respectively, enabling use in RF-coupled preamplifier stages up to ~100 MHz. Base-emitter on voltage is specified as 0.6–0.8 V at I_C = 10 mA, supporting predictable biasing in emitter-follower configurations.

Key Specifications

Pinout & Package

Package: TO-92 (CASE 29–11, TO-226AA), epoxy-molded plastic with 3-leaded through-hole configuration. Leads are spaced 0.1" (2.54 mm) apart (P dimension), with standardized E-B-C pinout orientation when viewed from flat side with leads down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with MPSA92 and BC807-40, the MPS8599G offers the optimal balance of 80 V breakdown, 150 MHz bandwidth, and through-hole TO-92 reliability - making it preferred for medium-voltage analog amplification where leaded assembly and VHF capability are required.

Availability

MPS8599G is available at Aetrix Electronics and suitable for audio preamplifiers, relay driver circuits, and linear regulator pass elements requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for MPS8599G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and consumer markets.

The MPS8599G belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, designed for cost-effective, high-reliability linear amplification and switching in industrial controls, power supplies, and signal conditioning circuits.

FAQ

What is the maximum continuous collector current for MPS8599G?

The MPS8599G is rated for 500 mAdc continuous collector current at T_A = 25°C with appropriate PCB copper pour or heatsinking. Derating is required above 25°C ambient - 12 mW/°C above 25°C for case-mounted operation, or 5.0 mW/°C for ambient-limited operation. Full 500 mA operation requires thermal management to maintain T_J ≤ 150°C.

Is MPS8599G pin-compatible with MPS8598?

Yes, the MPS8599G and MPS8598 share identical TO-92 (CASE 29–11) packaging and E-B-C pinout, but differ in voltage ratings: MPS8599G has V_CEO = 80 V and V_CBO = 80 V, while MPS8598 is rated at 60 V for both. Substituting MPS8599G for MPS8598 is safe in all cases; the reverse requires verification of voltage margin in the target circuit.

What is the typical DC current gain (h_FE) of MPS8599G at 100 mA collector current?

At I_C = 100 mA and V_CE = 5 V, the MPS8599G exhibits h_FE = 75–300 per the official ON Semiconductor datasheet. This wide range reflects process variation; design should accommodate the minimum value (75) for worst-case bias stability, especially in temperature-varying environments.

Can MPS8599G be used in RF amplifier applications?

Yes - the MPS8599G has a measured f_T of 150 MHz at I_C = 10 mA and V_CE = 5 V, and low capacitances (C_ibo = 30 pF, C_obo = 8.0 pF), making it suitable for VHF-band small-signal amplification (e.g., 30–100 MHz IF stages). Stability must be verified with proper neutralization and layout due to its PNP topology.

What is the thermal resistance from junction to case (R_θJC) for MPS8599G?

The MPS8599G has a specified R_θJC of 83.3 °C/W, meaning each watt of dissipated power raises the junction temperature 83.3°C above the case temperature. This value is critical for heatsink selection - for example, at 1.0 W dissipation with a 20°C/W heatsink and 25°C ambient, T_J ≈ 25 + (1.0 × 83.3) + (1.0 × 20) = 128.3°C, within the –55°C to +150°C rating.