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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MPS8599RLRAG

Name: MPS8599RLRAG
Brand: onsemi
SKU: MPS8599RLRAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MPS8599RLRAG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: MPS8599RLRAG.pdf

Description:: TRANS PNP 80V 0.5A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MPS8599RLRAG from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power analog and digital circuits. It features V_CEO = −80 V, I_C = −500 mA, h_FE = 75–300 (at I_C = 100 mA), V_CE(sat) = −0.3 V (at I_C/I_B = 10), and f_T = 150 MHz - enabling reliable operation in audio preamplifiers, power supply control stages, and discrete logic interface circuits.

For engineers reviewing the MPS8599RLRAG datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, TO-92 package layout, real-world use cases, and validated alternative transistors - all aligned with onsemi's official MPS8599 specification sheet (Rev. 0, April 2007).

Technical Context

The MPS8599RLRAG operates as a silicon PNP BJT with negative-polarity voltage and current ratings: V_CEO, V_CB, and V_EB are all specified with negative polarity per onsemi convention. Its DC current gain (h_FE) is rated at 100 min (I_C = 1.0 mA), 100 min (I_C = 10 mA), and 75 min (I_C = 100 mA), confirming stable gain across three decades of collector current.

Small-signal performance includes f_T = 150 MHz (I_C = 10 mA, V_CE = −5 V), C_obo = 8.0 pF (V_CB = −5 V), and C_ibo = 30 pF (V_EB = −0.5 V), supporting high-frequency switching and RF-coupled amplifier designs up to ~100 MHz. Thermal resistance R_JC = 83.3 °C/W confirms suitability for moderate-power dissipation when mounted on PCBs with thermal relief.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−80 V - Maximum reverse-biased collector-emitter voltage before breakdown; supports rail-to-rail operation in −48 V telecom supplies and −24 V industrial controls.
I_C (cont.)	−500 mA - Continuous collector current rating; enables driving loads such as relays, LED arrays, or small solenoids without external heat sinking at ambient temperatures ≤25°C.
h_FE	75–300 - DC current gain range at I_C = 100 mA, V_CE = −5 V; ensures predictable base drive requirements for saturated switching and linear amplification.
V_CE(sat)	−0.3 V (I_C = −100 mA, I_B = −10 mA) - Low saturation voltage minimizes conduction loss in high-side switch configurations and improves efficiency in discrete H-bridge drivers.
f_T	150 MHz - Unity-gain frequency confirms usable bandwidth for audio amplification (20 Hz–20 kHz), pulse-width modulation (PWM) signal conditioning, and medium-speed digital logic interfacing.
P_D @ T_A	625 mW - Total device dissipation at 25°C ambient; derates by 5.0 mW/°C above 25°C - defines safe operating area for PCB-mounted applications without forced airflow.
R_JA	200 °C/W - Junction-to-ambient thermal resistance measured on standard PCB; informs thermal design margin for enclosure-limited environments.

Pinout & Package

Package: TO-92 (Case 29-11), Pb-free, straight-lead variant supplied in tape-and-reel (2000 units). Dimensions conform to ANSI Y14.5M: body height 4.45–5.20 mm, lead pitch 2.54 mm, emitter-base-collector pinout (Viewed from flat side, leads down: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for PNP operation	Connected to most positive rail in high-side switch; base-emitter forward bias established when base is 0.6–0.8 V below emitter potential.
2 (Base)	Control input for minority-carrier injection	Requires current-limited drive (e.g., via 1–10 kΩ resistor); base current ≥ I_C/h_FE(min) ensures saturation in switching applications.
3 (Collector)	Output current path to load	Typically tied to load and ground; collector voltage must remain ≤ V_CEO (−80 V) relative to emitter to avoid avalanche breakdown.

Key Features

Feature	Design Value
Pb-free TO-92 packaging	Complies with RoHS Directive 2011/65/EU; eliminates lead contamination risk during reflow soldering and end-of-life recycling.
High V_CEO / V_CB	−80 V rating allows direct use in −48 V telecom systems and industrial −24 V/−36 V bus interfaces without series voltage clamping.
Low V_CE(sat)	−0.3 V at I_C/I_B = 10 reduces power loss to <100 mW in 100 mA switching loads - critical for thermally constrained PCB layouts.
Stable h_FE over temperature	h_FE maintains ≥75 at I_C = 100 mA from −55°C to +125°C (per Fig. 12), enabling robust performance in automotive under-hood and outdoor equipment.
150 MHz f_T	Supports clean square-wave switching up to ~30 MHz (5× rule of thumb), suitable for PWM dimming drivers and clock buffer stages in legacy microcontroller systems.

Applications

Audio Preamp Stage	Power Supply Enable Switch
Use Scenario: Discrete PNP stage in microphone preamplifier front-end, biased at I_C = 1 mA with V_CE = −5 V. IC Role / Device Role / Timing Role: Small-signal linear amplifier providing 20–30 dB voltage gain with low noise and minimal distortion. Use Value: h_FE ≥100 at 1 mA ensures stable bias point; f_T = 150 MHz preserves full audio bandwidth (20 Hz–20 kHz) with <0.1% THD.	Use Scenario: High-side enable switch controlling +12 V output of isolated DC-DC converter in industrial PLC module. IC Role / Device Role / Timing Role: Saturated PNP switch turning on/off regulated output based on microcontroller GPIO signal. Use Value: V_CE(sat) = −0.3 V limits dropout to <300 mV; −80 V V_CEO withstands transient spikes up to −60 V without failure.
Discrete Logic Level Shifter	Relay Driver Interface
Use Scenario: Translating 3.3 V CMOS logic (e.g., from ESP32) to −5 V TTL-compatible input in legacy test equipment. IC Role / Device Role / Timing Role: Inverting level translator using common-emitter configuration with pull-up to −5 V rail. Use Value: C_ibo = 30 pF and C_obo = 8 pF minimize propagation delay (<20 ns); h_FE >100 ensures full logic swing with <10 µA base drive.	Use Scenario: Driving 12 V, 80 mA coil of SPDT relay in HVAC control panel, with flyback diode protection. IC Role / Device Role / Timing Role: Medium-current saturated switch delivering full coil current with minimal self-heating. Use Value: I_C = −500 mA rating provides 6× safety margin over 80 mA load; R_JA = 200 °C/W keeps junction <100°C at 25°C ambient.

Audio Preamp Stage

Power Supply Enable Switch

Use Scenario: Discrete PNP stage in microphone preamplifier front-end, biased at I_C = 1 mA with V_CE = −5 V.

IC Role / Device Role / Timing Role: Small-signal linear amplifier providing 20–30 dB voltage gain with low noise and minimal distortion.

Use Value: h_FE ≥100 at 1 mA ensures stable bias point; f_T = 150 MHz preserves full audio bandwidth (20 Hz–20 kHz) with <0.1% THD.

Use Scenario: High-side enable switch controlling +12 V output of isolated DC-DC converter in industrial PLC module.

IC Role / Device Role / Timing Role: Saturated PNP switch turning on/off regulated output based on microcontroller GPIO signal.

Use Value: V_CE(sat) = −0.3 V limits dropout to <300 mV; −80 V V_CEO withstands transient spikes up to −60 V without failure.

Discrete Logic Level Shifter

Relay Driver Interface

Use Scenario: Translating 3.3 V CMOS logic (e.g., from ESP32) to −5 V TTL-compatible input in legacy test equipment.

IC Role / Device Role / Timing Role: Inverting level translator using common-emitter configuration with pull-up to −5 V rail.

Use Value: C_ibo = 30 pF and C_obo = 8 pF minimize propagation delay (<20 ns); h_FE >100 ensures full logic swing with <10 µA base drive.

Use Scenario: Driving 12 V, 80 mA coil of SPDT relay in HVAC control panel, with flyback diode protection.

IC Role / Device Role / Timing Role: Medium-current saturated switch delivering full coil current with minimal self-heating.

Use Value: I_C = −500 mA rating provides 6× safety margin over 80 mA load; R_JA = 200 °C/W keeps junction <100°C at 25°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPS8599RLRA	Same die, Pb-containing TO-92 package (non-RoHS compliant)	Identical electrical specs; unsuitable for EU/UK/China RoHS-regulated products	Select only if RoHS exemption applies or legacy compliance documentation is accepted.
BC857B,215	SOT-23 package, I_C = −100 mA, h_FE = 200–450, V_CEO = −45 V	Lower voltage/current capability; surface-mount only; not drop-in compatible	Use for space-constrained PCBs where −45 V rating suffices and reflow assembly is preferred.

Compared with MPS8599RLRAG, MPS8599RLRA offers identical performance but lacks RoHS compliance, while BC857B,215 trades higher h_FE and SMT compatibility for reduced voltage headroom and non-interchangeable packaging - requiring layout revision and derating analysis for −48 V systems.

Availability

MPS8599RLRAG is available at Aetrix Electronics and suitable for industrial control panels, telecom power management, audio signal conditioning, and discrete logic interface circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for MPS8599RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The MPS8599 belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability discrete amplification and switching in industrial and telecom infrastructure - emphasizing ruggedness, wide temperature operation, and consistent parametric yield.

FAQ

What is the maximum collector-emitter voltage rating for MPS8599RLRAG?

The MPS8599RLRAG has a maximum collector-emitter voltage (V_CEO) rating of −80 Vdc. This value is confirmed in the "Maximum Ratings" table of the official onsemi datasheet (MPS8099/D, Rev. 0). Exceeding this voltage - even momentarily - risks avalanche breakdown and permanent device failure. Designers must ensure that the voltage difference between collector and emitter never exceeds −80 V under all operating and transient conditions when using the MPS8599RLRAG.

Is MPS8599RLRAG a PNP or NPN transistor?

MPS8599RLRAG is a PNP bipolar junction transistor. This is explicitly stated in the onsemi datasheet title ("NPN − MPS8099; PNP − MPS8599") and reinforced by all negative-polarity ratings: V_CEO, V_CB, V_EB, I_C, and V_CE(sat) are all specified with minus signs. The pinout (Emitter=Pin1, Base=Pin2, Collector=Pin3) follows standard TO-92 PNP orientation - critical for correct biasing in high-side switch or inverting amplifier configurations using the MPS8599RLRAG.

What is the DC current gain (h_FE) range for MPS8599RLRAG at 100 mA collector current?

At I_C = −100 mA and V_CE = −5.0 Vdc, the MPS8599RLRAG exhibits a minimum DC current gain (h_FE) of 75, with no maximum specified in the datasheet. This value is documented in the "ON CHARACTERISTICS" table under "DC Current Gain". Designers should use h_FE = 75 for worst-case base drive calculations when operating the MPS8599RLRAG in saturation, ensuring sufficient I_B to maintain low V_CE(sat) across process and temperature variation.

Does MPS8599RLRAG have RoHS-compliant packaging?

Yes, MPS8599RLRAG uses a Pb-free TO-92 package, as indicated by the "G" suffix in the part number and confirmed in the "Ordering Information" table (MPS8599RLRAG = TO-92, Pb-Free, 2000/Tape & Reel). The onsemi datasheet explicitly notes "Pb−Free Packages are Available" and references its Pb-Free strategy documentation. This makes the MPS8599RLRAG compliant with EU RoHS Directive 2011/65/EU and other global lead-free mandates - essential for export-controlled and consumer-facing electronics.

What is the thermal resistance junction-to-ambient (R_JA) for MPS8599RLRAG?

The thermal resistance junction-to-ambient (R_JA) for MPS8599RLRAG is 200 °C/W, measured with the device soldered onto a typical printed circuit board (note 1 in the "Thermal Characteristics" table). This value assumes standard JEDEC-defined copper pad layout and natural convection cooling. When designing thermal margins, engineers must apply this R_JA to calculate worst-case junction temperature: T_J = T_A + (P_D × R_JA). For the MPS8599RLRAG, this limits continuous power dissipation to ~312 mW at 70°C ambient to stay within the 150°C max junction rating.

MPS8599RLRAG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 1mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 150MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

MPS8599RLRAG FAQ

1.How can I place an order for MPS8599RLRAG through Aetrix?

Please submit a Request for Quotation (RFQ) for MPS8599RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPS8599RLRAG reliable?

The price and inventory of MPS8599RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPS8599RLRAG is usually 5 days.

3.What payment methods are accepted for MPS8599RLRAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPS8599RLRAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPS8599RLRAG?

MPS8599RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPS8599RLRAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPS8599RLRAG?

For technical support, including MPS8599RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPS8599RLRAG requirements.

6.How does Aetrix verify that MPS8599RLRAG is sourced from the original manufacturer or authorized distributors?

All MPS8599RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPS8599RLRAG meets industry standards.

7.What is the process for return or replacement of MPS8599RLRAG?

All MPS8599RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with MPS8599RLRAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPS8599RLRAG part is unused and in its original packaging.

Return procedure for MPS8599RLRAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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