onsemi MPSA13_D26Z

Overview

MPSA13_D26Z from ON Semiconductor (formerly Fairchild) is an NPN Darlington transistor optimized for high-current-switching applications with DC current gain up to 10,000 at IC = 100 mA, VCE = 5.0 V, and VCE(sat) = 1.5 V at IC = 100 mA / IB = 0.1 mA. It supports continuous collector current of 1.2 A and operates across –55°C to +150°C junction temperature range, commonly used in relay drivers, lamp drivers, and low-frequency power switching circuits.

For engineers reviewing the MPSA13_D26Z datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture enabling ultra-high hFE, TO-92 package thermal resistance (RθJA = 200°C/W), and verified breakdown voltage (VCES = 30 V) under pulse-tested conditions.

Technical Context

The MPSA13_D26Z integrates two cascaded NPN transistors in a monolithic Darlington configuration, delivering hFE ≥ 5,000 at 10 mA and ≥ 10,000 at 100 mA - enabling single-stage base drive for loads requiring >1 A collector current. Its VBE(on) = 2.0 V at IC = 100 mA reflects the stacked base-emitter junctions inherent to Darlington topology.

Thermal performance is defined for FR-4 PCB mounting (1.6" × 1.6" × 0.06"), with PD = 625 mW at 25°C and derating at 5.0 mW/°C above ambient. RθJC = 83.3°C/W confirms internal die-to-case conduction path efficiency, while RθJA = 200°C/W sets practical power limits in still-air environments.

Key Specifications

Pinout & Package

Package: TO-92 - through-hole plastic package with 3.60 mm ±0.20 mm body width, 14.47 mm ±0.40 mm overall length, and 1.02 mm ±0.10 mm lead diameter, optimized for manual assembly and low-cost prototyping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Compared with MPSA13_D26Z, MMBT5401_D26Z serves opposite polarity needs and lacks Darlington gain, while ULN2003A offers integration at the expense of flexibility and discrete optimization - making MPSA13_D26Z optimal for single-load, cost-sensitive, through-hole designs requiring maximum hFE.

Availability

MPSA13_D26Z is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and low-speed DC motor control applications requiring stable component supply, long-term obsolescence management, and consistent parametric performance across production lots.

Supply support for MPSA13_D26Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MPSA13_D26Z belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, high-gain switching applications where discrete Darlington performance and TO-92 manufacturability are prioritized.

FAQ

What is the maximum continuous collector current rating for MPSA13_D26Z?

The MPSA13_D26Z is rated for 1.2 A continuous collector current (IC) at Ta = 25°C on a standard FR-4 PCB. This rating assumes proper thermal management; derating is required at higher ambient temperatures per the 5.0 mW/°C specification. Exceeding this current without heatsinking risks thermal runaway due to the device's RθJA of 200°C/W. The MPSA13_D26Z datasheet specifies IC = 1.2 A as the absolute maximum under defined test conditions.

Does MPSA13_D26Z have built-in protection features like flyback diodes?

No, the MPSA13_D26Z is a bare NPN Darlington transistor without integrated protection components. It does not include built-in flyback diodes, base resistors, or thermal shutdown circuitry. External components - such as a reverse-biased diode across inductive loads and a series base resistor - must be added per application requirements. This discrete design gives full control over protection implementation but places responsibility for robustness on the circuit designer. The MPSA13_D26Z datasheet confirms no internal protection elements.

Can MPSA13_D26Z be used in linear amplification applications?

The MPSA13_D26Z is characterized and optimized for switching operation, not linear amplification. Its high hFE and VCE(sat) are specified under switching conditions, and small-signal parameters like fT = 125 MHz apply only at IC = 10 mA - far below its typical switching bias points. Thermal instability and gain nonlinearity make it unsuitable for Class-A or AB audio amplifiers. For linear use, dedicated RF or general-purpose amplifiers with specified linearity metrics should be selected instead of the MPSA13_D26Z.

What is the base-emitter on voltage (VBE(on)) of MPSA13_D26Z under typical operating conditions?

The MPSA13_D26Z exhibits a VBE(on) of 2.0 V at IC = 100 mA and VCE = 5.0 V, reflecting the dual base-emitter junctions in its Darlington structure. This value is significantly higher than standard NPN transistors (~0.7 V) and must be accounted for when calculating base resistor values. At lower currents (e.g., IC = 10 mA), VBE(on) drops to approximately 1.6 V. These measurements are confirmed in the official MPSA13_D26Z datasheet under "On Characteristics".

Is MPSA13_D26Z compatible with lead-free reflow soldering processes?

Yes, the MPSA13_D26Z TO-92 package is rated for lead-free reflow soldering per J-STD-020. Its maximum peak reflow temperature is 260°C for 30 seconds, consistent with industry-standard Pb-free profiles. The plastic body material and lead finish (typically matte tin) meet RoHS and JEDEC specifications. However, due to its thermal resistance (RθJA = 200°C/W), prolonged exposure near peak temperature should be avoided to prevent junction overheating during assembly. Refer to the MPSA13_D26Z packaging specification sheet for full process guidelines.