onsemi MPSA13ZL1

Overview

MPSA13ZL1 from onsemi is an NPN silicon Darlington transistor in TO-92 package, rated for 30 V_CE, 500 mA continuous collector current, and 625 mW power dissipation at 25°C ambient. It delivers DC current gain (h_FE) ≥5,000 at I_C = 10 mA and V_CE = 5 V, with V_CE(sat) ≤1.5 V at I_C = 100 mA / I_B = 0.1 mA - used in low-speed switching and high-gain amplification circuits such as relay drivers and sensor interface stages.

For engineers reviewing the MPSA13ZL1 datasheet, pinout, applications, or equivalent options, key selection criteria include verified Darlington configuration, TO-92 mechanical compatibility, guaranteed h_FE ≥5,000 at 10 mA, V_BE(on) ≤2.0 V, and thermal resistance R_JA = 200°C/mW - all confirmed in onsemi's official MPSA13/D Rev. 3 datasheet.

Technical Context

The MPSA13ZL1 implements a monolithic NPN Darlington pair with integrated base-emitter resistor network absent - requiring external base drive control. Its high h_FE enables microampere-level base current to switch 100+ mA loads, while f_T = 125 MHz supports limited RF preamplifier use below 10 MHz.

Thermal design relies on R_JA = 200°C/mW and R_JC = 83.3°C/mW, with safe operating area bounded by single-pulse thermal limits up to 1.5 W at T_C = 25°C and second-breakdown constraints above 10 V_CE.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), epoxy-molded plastic with 3-pin vertical lead configuration. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - verified per onsemi MPSA13/D Rev. 3 page 2 marking diagram and package outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with MPSA13RLRA, MPSA13ZL1 offers identical electrical behavior but optimized for manual handling and small-batch assembly; versus MPSA14, it provides lower gain at reduced cost and wider availability - making it the balanced choice for general-purpose Darlington switching where 5,000 h_FE suffices.

Availability

MPSA13ZL1 is available at Aetrix Electronics and suitable for relay drivers, sensor interfaces, LED regulators, and low-speed motor controls requiring stable component supply, consistent TO-92 mechanical fit, and guaranteed h_FE ≥5,000 across production lots.

Supply support for MPSA13ZL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPSA13ZL1 belongs to onsemi's legacy discrete bipolar transistor product line, designed specifically for cost-effective, high-gain switching and amplification in space-constrained through-hole applications - emphasizing reliability, thermal robustness, and Pb-free compliance.

FAQ

What is the maximum collector-emitter voltage rating for the MPSA13ZL1?

The MPSA13ZL1 has a maximum collector-emitter voltage (V_CEO) rating of 30 Vdc, as specified in the Absolute Maximum Ratings table of onsemi's MPSA13/D Rev. 3 datasheet. This value applies under open-base conditions and defines the upper limit for safe DC or pulsed operation without risk of avalanche breakdown. Exceeding 30 V may cause irreversible device failure.

Does the MPSA13ZL1 include an internal base-emitter resistor?

No, the MPSA13ZL1 does not incorporate any internal base-emitter resistor. It is a standard two-terminal Darlington transistor requiring external base current limiting - typically via a series resistor between the driving source and Pin 2 (Base). This design allows full flexibility in setting bias conditions but mandates careful calculation of R_B to avoid overdriving the base junction.

What is the guaranteed DC current gain (h_FE) of the MPSA13ZL1 at 10 mA collector current?

The MPSA13ZL1 guarantees a minimum DC current gain (h_FE) of 5,000 when tested at I_C = 10 mA and V_CE = 5.0 Vdc, per the Electrical Characteristics table in the official onsemi datasheet. This specification is production-tested and assured across all manufacturing lots - enabling reliable low-base-current drive in high-gain applications.

Is the MPSA13ZL1 RoHS-compliant and lead-free?

Yes, the MPSA13ZL1 is RoHS-compliant and lead-free. Its "ZL1" suffix denotes the standard lead-free version, and onsemi explicitly confirms Pb-free packaging in the Ordering Information section of the MPSA13/D Rev. 3 datasheet. The Pb-free variant meets EU Directive 2011/65/EU requirements without compromising electrical or thermal performance.

How does the thermal resistance of the MPSA13ZL1 affect PCB layout decisions?

The MPSA13ZL1 has a junction-to-ambient thermal resistance (R_JA) of 200°C/mW, meaning each milliwatt of dissipated power raises the junction temperature by 200°C above ambient. To maintain T_J ≤150°C at 25°C ambient, power dissipation must stay below 625 mW - requiring adequate copper pour, minimal trace length, and avoidance of nearby heat sources. Derating is mandatory above 25°C ambient.