onsemi MPSA29_D27Z

Overview

MPSA29_D27Z from onsemi is an NPN silicon Darlington transistor in a TO-92 package, rated for 100 V_CEO, 500 mA continuous collector current, and 1.5 W power dissipation at T_C = 25°C. It delivers high DC current gain (h_FE ≥ 10,000 at I_C = 10 mA), low V_CE(sat) (≤ 1.5 V), and f_T up to 200 MHz - used in high-gain switching and linear amplification stages of industrial control interfaces and relay drivers.

For engineers reviewing the MPSA29_D27Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO = 100 V, h_FE ≥ 10,000 at low I_C, TO-92 mechanical compatibility, thermal resistance R_θJC = 83.3°C/W, and Pb-free packaging compliance per onsemi's marking diagram.

Technical Context

The MPSA29_D27Z implements a monolithic NPN Darlington pair with integrated base-emitter resistor network absent - requiring external base drive control. Its high h_FE enables microampere-level base current to switch 500 mA loads, while V_CE(sat) ≤ 1.5 V at I_C/I_B = 1000 ensures low conduction loss in saturated switching.

Thermal design relies on its R_θJC = 83.3°C/W and R_θJA = 200°C/W ratings, supporting operation from –55°C to +150°C junction temperature. The device exhibits C_obo = 5.0–8.0 pF and f_T = 125–200 MHz, confirming suitability for medium-frequency amplification and fast-switching applications up to ~100 MHz.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11), straight-lead or bent-lead configuration, Pb-free per marking "G" suffix. Dimensions comply with ANSI Y14.5M and ASME Y14.5M standards; lead pitch 2.54 mm, body height 4.45–5.20 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with MPSA29_D27Z, MPSA29RLRPG offers identical performance in a different packaging format ideal for SMT placement, while ULN2003A trades single-device simplicity for multi-channel integration and built-in protection - making it suitable for complex I/O expansion but requiring PCB redesign.

Availability

MPSA29_D27Z is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor speed control, and LED array power switching requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for MPSA29_D27Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The MPSA29_D27Z belongs to onsemi's Preferred Devices family of general-purpose bipolar transistors, engineered for reliability and consistency in high-volume industrial control and interface circuits.

FAQ

What is the maximum collector-emitter voltage rating for MPSA29_D27Z?

The MPSA29_D27Z has a guaranteed minimum V_(BR)CES of 100 Vdc at I_C = 100 mA and V_BE = 0. This rating is validated per onsemi's published datasheet Rev. 3 and applies across the full operating temperature range. Designers should maintain ≤80 V applied V_CE in production circuits to ensure long-term reliability under transient conditions. The MPSA29_D27Z must not be operated beyond this absolute maximum rating.

Does MPSA29_D27Z include integrated base resistors?

No, the MPSA29_D27Z is a standard two-terminal-base Darlington transistor without internal base resistors. External base current limiting is required - typically via a series resistor sized to deliver I_B = I_C/h_FE with margin. This distinguishes it from devices like the ULN2003A. The MPSA29_D27Z datasheet confirms no internal resistive elements; all biasing must be implemented externally.

What is the thermal resistance from junction to case for MPSA29_D27Z?

The MPSA29_D27Z has a specified R_θJC of 83.3°C/W, measured under standardized test conditions per JEDEC JESD51. This value enables calculation of junction temperature rise above case temperature: ΔT_JC = P_D × 83.3. For example, at 1.0 W dissipation, ΔT_JC = 83.3°C. The MPSA29_D27Z requires appropriate mechanical mounting to maintain case temperature within limits.

Is MPSA29_D27Z RoHS-compliant and what does the 'G' suffix indicate?

Yes, the MPSA29_D27Z is RoHS-compliant and carries the "G" suffix per onsemi's marking diagram, indicating Pb-free construction. This designation appears on the device body and correlates with the "Pb-Free" notation in the ordering information table. The MPSA29_D27Z meets EU Directive 2011/65/EU and subsequent amendments without exemptions. Full compliance documentation is available via onsemi's website.

Can MPSA29_D27Z replace MPSA28 in existing designs?

MPSA29_D27Z can replace MPSA28 only if the design requires ≥100 V V_CEO - the MPSA28 is rated for 80 V. Both share identical pinout, package, and h_FE spec, but substituting MPSA29_D27Z into a 80 V system introduces unnecessary cost and may affect parametric validation. The MPSA29_D27Z is not a drop-in replacement unless the higher voltage rating is actively needed and verified in the target application.