onsemi MPSA56G

Overview

MPSA56G from ON Semiconductor is a PNP general-purpose amplifier transistor designed for linear amplification and switching in low-power analog and digital circuits, with V_CEO = −60 V, I_C = −500 mA, h_FE ≥ 100 at I_C = −10 mA, V_CE(sat) ≤ −0.25 V, and f_T = 50 MHz - commonly used in audio preamplifier stages, level-shifting interfaces, and discrete logic inverters.

For engineers reviewing the MPSA56G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, TO-92 package mapping, terminal roles, real-world use cases in signal conditioning and load switching, and two validated alternative PNP transistors with documented parameter and thermal differences.

Technical Context

The MPSA56G operates as a silicon planar epitaxial PNP bipolar junction transistor with a grounded-emitter configuration in common-emitter amplifier setups. Its DC current gain (h_FE) is specified across two test points: ≥100 at I_C = −10 mA and ≥30 at I_C = −100 mA, enabling stable biasing over moderate current ranges.

It features a maximum collector-emitter breakdown voltage of −60 V and emitter-base breakdown voltage of −4.0 V, supporting operation in negative-rail signal chains. Thermal resistance R_θJA is 200 °C/W on FR-4 PCB, limiting continuous power dissipation to 625 mW at 25 °C ambient.

Key Specifications

Pinout & Package

Package: TO-92, 3-lead molded plastic case with straight leads; standardized for through-hole mounting and manual prototyping. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (viewed from flat side with leads down, left-to-right).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with MPSA56G, MPSA55 offers identical voltage rating but reduced high-current gain, while BC557B trades voltage margin and power handling for tighter h_FE tolerance - both require revalidation of bias networks and thermal margins in existing designs.

Availability

MPSA56G is available at Aetrix Electronics and suitable for audio signal conditioning, industrial level-shifting interfaces, and discrete logic implementation requiring stable component supply across production lifecycles.

Supply support for MPSA56G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud infrastructure markets.

The MPSA56G belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, engineered for cost-sensitive, reliability-critical linear and switching functions in consumer and industrial equipment.

FAQ

What is the absolute maximum collector-emitter voltage rating for the MPSA56G?

The MPSA56G has an absolute maximum V_CEO rating of −60 V. This means the collector must remain at least 60 V more negative than the emitter to avoid avalanche breakdown. Operation near this limit requires careful attention to transient spikes and PCB layout parasitics, especially in inductive load switching. The MPSA56G datasheet confirms this value under "Absolute Maximum Ratings" with T_J = 150 °C limit.

Does the MPSA56G have the same pinout as the MPSA06 NPN counterpart?

No - the MPSA56G (PNP) and MPSA06 (NPN) share the TO-92 package but have reversed terminal assignments. For MPSA56G: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. For MPSA06: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - same physical order, but polarity reversal means circuit topology must be mirrored (e.g., supply rails flipped). Always verify orientation via flat-side marking and lead identification in the MPSA56G datasheet.

Can the MPSA56G replace the BC557 in an existing design?

The MPSA56G can substitute for BC557 in many cases due to matching TO-92 footprint and similar h_FE, but V_CEO differs: BC557 is rated at −45 V versus −60 V for MPSA56G. If the original design operates below −30 V, the MPSA56G adds margin; however, its lower h_FE at high current (≥100 mA) may require base resistor adjustment. Validate bias point and thermal rise with actual MPSA56G samples before full deployment.

What is the typical current gain (h_FE) of the MPSA56G at 100 mA collector current?

The MPSA56G exhibits h_FE ≥ 30 at I_C = −100 mA and V_CE = −1 V, per the official ON Semiconductor datasheet. This is significantly lower than its h_FE ≥ 100 at I_C = −10 mA, reflecting typical PNP gain compression at higher currents. Designers must size base drive accordingly - e.g., ≥3.3 mA base current needed for 100 mA collector output - and verify saturation with V_CE(sat) ≤ −0.25 V.

Is the MPSA56G RoHS compliant and halogen-free?

Yes - the MPSA56G is manufactured by ON Semiconductor to meet RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. This compliance is confirmed in ON Semiconductor's official product change notices and material declarations, and applies to all currently shipped lots. No exemptions are claimed, and the device carries the standard RoHS marking on reel packaging and datasheet revision history.