onsemi MPSA63

Overview

MPSA63 from onsemi is a PNP silicon Darlington transistor in TO-92 package, rated for −30 V_CEO, −500 mA continuous collector current, and 625 mW power dissipation at T_A = 25°C. It delivers DC current gain (h_FE) ≥10,000 at I_C = −10 mA and V_CE = −5 V, and is used in low-speed switching and linear amplification circuits requiring high current gain with minimal base drive.

For engineers reviewing the MPSA63 datasheet, pinout, applications, or equivalent options, key selection criteria include its −30 V C-E breakdown rating, Darlington configuration enabling microampere-level base control, TO-92 mechanical compatibility, and thermal resistance of 200°C/W (junction-to-ambient) under standard mounting conditions.

Technical Context

The MPSA63 operates as a two-stage PNP Darlington pair, integrating driver and output transistors in a single die to achieve high h_FE while maintaining defined saturation characteristics. Its V_CE(sat) ≤ −1.5 V at I_C = −100 mA and I_B = −0.1 mA confirms low-loss switching capability in medium-current loads.

Electrical behavior is specified across −55°C to +150°C junction temperature range, with guaranteed I_CBO ≤ −100 nA at V_CB = −30 V and I_EBO ≤ −100 nA at V_EB = −10 V, supporting stable operation in temperature-variable industrial signal conditioning and relay driver stages.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-11, Style 1), through-hole, Pb-free compatible (MPSA63ZL1G). Standard lead configuration with Emitter (Pin 1), Base (Pin 2), Collector (Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Compared with MPSA64 and PN2907A, the MPSA63 uniquely balances high Darlington gain (≥10,000) with −30 V rating and industry-standard TO-92 footprint-making it ideal for cost-sensitive, medium-current, low-base-drive applications where neither extreme gain nor ultra-high voltage is required.

Availability

MPSA63 is available at Aetrix Electronics and suitable for relay driver circuits, LED current amplifiers, low-frequency signal amplifiers, and power supply enable switches requiring stable component supply and long-term manufacturability.

Supply support for MPSA63 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MPSA63 belongs to onsemi's legacy discrete bipolar transistor family designed specifically for general-purpose linear amplification and medium-current switching in cost-sensitive industrial and consumer electronics.

FAQ

What is the maximum collector-emitter voltage rating for the MPSA63?

The MPSA63 has a guaranteed minimum collector-emitter breakdown voltage (V_(BR)CES) of −30 Vdc at I_C = −100 µAdc and V_BE = 0. This rating applies under open-base conditions and defines the absolute maximum voltage that can be safely applied between collector and emitter without risking avalanche conduction. Designers should maintain at least 20% margin below this value in steady-state operation.

Does the MPSA63 have a Pb-free option, and what is its marking code?

Yes, the MPSA63ZL1G is the Pb-free version of the MPSA63, packaged in TO-92 and supplied in ammo pack format (2000 units). Its marking code follows the standard onsemi convention: "MPSA63" printed on the device body, with date code "AYWW" (Assembly Location, Year, Work Week) and microdot indicating Pb-free compliance per JEDEC standards.

How does the MPSA63 compare to the MPSA62 in terms of voltage rating and gain?

The MPSA63 differs from the MPSA62 primarily in voltage and gain specifications: MPSA63 offers −30 V V_CEO and h_FE ≥10,000, whereas MPSA62 is rated for only −20 V V_CEO and h_FE ≥5,000. Both share identical TO-92 packaging and pinout, but the MPSA63 is preferred for 24 V systems and applications demanding higher current gain with lower base drive.

What is the thermal resistance of the MPSA63, and how does it affect PCB layout?

The MPSA63 has a junction-to-ambient thermal resistance (R_JA) of 200°C/W under free-air conditions. To maintain T_J ≤ 125°C at 625 mW dissipation, the PCB must provide sufficient copper area-typically ≥1 in² of 2 oz copper connected to the collector lead-to reduce effective R_JA. Without added copper, ambient temperature must stay below 50°C for reliable operation.

Can the MPSA63 be used in linear amplifier configurations, and what is its small-signal bandwidth?

Yes, the MPSA63 supports linear operation with a current-gain bandwidth product (f_T) of 125 MHz at I_C = −100 mA and V_CE = −5 V. In common-emitter amplifier configurations, it delivers usable gain up to ~10–20 MHz depending on biasing and load; however, its Darlington structure introduces higher output capacitance than single transistors, limiting high-frequency fidelity compared to RF-optimized devices.