Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MPSA77_D75Z

Part No.:
MPSA77_D75Z
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
AetrixMPSA77_D75Z.pdf
Description:
TRANS PNP DARL 60V 1.2A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,995

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MPSA77_D75Z from ON Semiconductor (formerly Fairchild) is a PNP Darlington transistor optimized for high-current-switching applications requiring minimum base drive and extremely high DC current gain (hFE ≥ 10,000 at IC = −100 mA). It supports continuous collector current up to −1.2 A, VCE(sat) ≤ −1.5 V, and operates across −55°C to +150°C junction temperature. Used in relay drivers, lamp drivers, and low-frequency power switching circuits.

For engineers reviewing the MPSA77_D75Z datasheet, MPSA77_D75Z pinout, MPSA75_D75Z application, or MPSA77_D75Z equivalent, key selection criteria include guaranteed hFE ≥ 10,000 at −100 mA, VCE(sat) ≤ −1.5 V under specified drive, TO-92 mechanical compatibility, thermal resistance RθJA = 200°C/W, and −60 V VCEO rating for robust voltage margin in industrial control designs.

Technical Context

The MPSA77_D75Z implements a monolithic PNP Darlington pair with integrated base-emitter resistor network absent - external base biasing required. Its high hFE enables direct microcontroller GPIO driving without additional pre-amplification stages. The device uses process 61, optimized for stable gain and low saturation voltage at medium currents (−10 mA to −100 mA).

Thermal design must account for RθJA = 200°C/W in standard TO-92 mounting; derating begins above 25°C at 5.0 mW/°C. Safe operation requires limiting VCB ≤ −60 V and VEB ≤ −10 V to prevent junction breakdown, per absolute maximum ratings.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−60 V: Maximum safe collector-emitter voltage before avalanche breakdown; enables use in 48 V industrial bus switching.
IC (cont.)−1.2 A: Continuous collector current capability; supports solenoid or motor coil loads up to ~1.2 A DC.
hFE≥10,000 @ IC = −100 mA: Enables single-stage switching with <100 µA base current - reduces MCU I/O loading.
VCE(sat)≤ −1.5 V @ IC = −100 mA, IB = −0.1 mA: Limits conduction loss to <150 mW at rated current; simplifies heatsinking.
TJ Range−55°C to +150°C: Supports deployment in automotive under-hood and industrial ambient environments without derating.
fT100 MHz: Bandwidth sufficient for <10 kHz switching (e.g., PWM dimming), not suitable for RF or high-speed digital.

Pinout & Package

Package: TO-92 (standard through-hole plastic package, 3-pin, lead spacing 0.3 inches). Dimensions conform to JEDEC TO-92 outline; body height ≤ 4.6 mm, lead length ≥ 3.5 mm.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)PNP emitter terminalConnected to positive rail in high-side switch configuration; carries full load current.
2 (Base)Control input nodeReceives low-current drive signal; base-emitter junction forward-biased to turn on Darlington pair.
3 (Collector)Current sink outputConnected to load return path; voltage swings between near-rail and −60 V during off-state.

Key Features

FeatureDesign Value
Ultra-high DC current gainhFE ≥ 10,000 at −100 mA ensures minimal base drive - eliminates need for driver transistors in many logic-level interfaces.
Low saturation voltageVCE(sat) ≤ −1.5 V at −100 mA limits power dissipation and self-heating during sustained conduction.
Robust voltage ratings−60 V VCEO and VCBO provide 2× safety margin over common 24–48 V industrial supply rails.
Wide operating temperature−55°C to +150°C junction range allows direct use in unheated enclosures or engine compartments without derating.

Applications

Relay Driver CircuitLamp / LED Array Driver

Use Scenario: Driving 12 V/24 V electromagnetic relays with coil resistance 100–500 Ω in PLC I/O modules.

IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing galvanic isolation between microcontroller and relay coil.

Use Value: Eliminates need for dual-transistor stage; base current <100 µA suffices for full relay actuation, reducing GPIO loading and PCB area.

Use Scenario: Switching 24 V incandescent lamps or high-current LED strings (up to 1 A) in building automation panels.

IC Role / Device Role / Timing Role: Medium-power linear current sink in constant-voltage lamp control topology.

Use Value: VCE(sat) ≤ −1.5 V ensures <1.5 W dissipation at 1 A - avoids active heatsink in space-constrained enclosures.

DC Motor Direction ControlIndustrial Sensor Interface

Use Scenario: Low-frequency H-bridge half-bridge element controlling bidirectional 24 V DC motors in conveyor systems.

IC Role / Device Role / Timing Role: High-side PNP switch enabling reverse-polarity motor drive when paired with NPN complement.

Use Value: −60 V VCEO withstands inductive kickback spikes up to 40 V - reduces snubber complexity and component count.

Use Scenario: Level-shifting and current amplification for analog sensor outputs (e.g., 4–20 mA transmitters) feeding PLC analog inputs.

IC Role / Device Role / Timing Role: Current buffer amplifier converting low-current sensor signals into robust, noise-immune loop drive.

Use Value: hFE ≥ 10,000 ensures accurate current replication with <0.1% gain error across temperature - improves measurement fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT6517VCEO = −40 V; hFE = 7,000 min @ −100 mA; SOT-23 packageLower voltage rating limits use to ≤24 V systems; surface-mount onlySelect when board space is constrained and voltage stress remains <30 V.
PN2907AStandard PNP (not Darlington); hFE = 100 min @ −150 mA; VCEO = −60 VRequires ~10× higher base current; unsuitable for direct MCU driveChoose only if Darlington gain is unnecessary and cost sensitivity outweighs drive simplicity.

Compared with MMBT6517 and PN2907A, the MPSA77_D75Z delivers uniquely high gain and low saturation voltage in a through-hole TO-92 package - critical for legacy industrial designs where layout change is prohibitive and base-drive minimization is essential.

Availability

MPSA77_D75Z is available at Aetrix Electronics and suitable for relay drivers, lamp/LED array controls, DC motor direction circuits, and industrial sensor interfaces requiring stable component supply across long-lifecycle manufacturing programs.

Supply support for MPSA77_D75Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MPSA77_D75Z belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered specifically for high-gain, medium-current linear and switching applications in cost-sensitive industrial control systems.

FAQ

What is the maximum continuous collector current rating for the MPSA77_D75Z?

The MPSA77_D75Z has a maximum continuous collector current (IC) rating of −1.2 A at TA = 25°C. Derating applies above 25°C at 5.0 mW/°C. This rating supports robust operation in relay and lamp driver applications where sustained current draw reaches 1 A. Always verify thermal margin using RθJA = 200°C/W and actual board layout conditions for the MPSA77_D75Z.

Does the MPSA77_D75Z have an integrated base resistor?

No, the MPSA77_D75Z does not include an integrated base resistor. It is a bare PNP Darlington transistor requiring external base biasing. This gives designers full control over base current and switching speed but necessitates careful calculation of RB to ensure saturation while avoiding excessive base drive. The MPSA77_D75Z datasheet specifies VBE(on) = −2.0 V at IC = −100 mA for such calculations.

Can the MPSA77_D75Z replace the MPSA70 in existing designs?

Yes, the MPSA77_D75Z can replace the MPSA70 in most applications, as both are PNP Darlington transistors in TO-92 packages with identical pinout (E-B-C). However, the MPSA77_D75Z offers higher hFE (≥10,000 vs. ≥10,000 for MPSA70 at −10 mA, but MPSA77_D75Z maintains it at −100 mA), lower VCE(sat), and same −60 V ratings. Verify base drive compatibility and thermal performance under full load for the MPSA77_D75Z.

What is the thermal resistance from junction to ambient for the MPSA77_D75Z?

The MPSA77_D75Z has a junction-to-ambient thermal resistance (RθJA) of 200°C/W under standard TO-92 mounting on FR-4 PCB with 1-inch² copper pad. This value assumes natural convection and no forced airflow. For reliable operation at IC > 500 mA, thermal simulation or empirical testing is recommended to confirm junction temperature stays below 150°C for the MPSA77_D75Z.

Is the MPSA77_D75Z suitable for high-frequency switching applications?

No, the MPSA77_D75Z is not suitable for high-frequency switching. Its fT is 100 MHz, but Darlington architecture introduces significant storage time and slow turn-off characteristics. It is intended for low-frequency applications (<10 kHz), such as relay control, lamp dimming, or DC motor direction switching. For PWM above 20 kHz, consider MOSFET alternatives. The MPSA77_D75Z excels in gain and simplicity-not speed.

MPSA77_D75Z Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP - Darlington
Current - Collector (Ic) (Max):
1.2 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Power - Max:
625 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

MPSA77_D75Z FAQ

1.How can I place an order for MPSA77_D75Z through Aetrix?

Please submit a Request for Quotation (RFQ) for MPSA77_D75Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPSA77_D75Z reliable?

The price and inventory of MPSA77_D75Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPSA77_D75Z is usually 5 days.

3.What payment methods are accepted for MPSA77_D75Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPSA77_D75Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPSA77_D75Z?

MPSA77_D75Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPSA77_D75Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPSA77_D75Z?

For technical support, including MPSA77_D75Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPSA77_D75Z requirements.

6.How does Aetrix verify that MPSA77_D75Z is sourced from the original manufacturer or authorized distributors?

All MPSA77_D75Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPSA77_D75Z meets industry standards.

7.What is the process for return or replacement of MPSA77_D75Z?

All MPSA77_D75Z units undergo pre-shipment inspection (PSI). If there is an issue with MPSA77_D75Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPSA77_D75Z part is unused and in its original packaging.

Return procedure for MPSA77_D75Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MPSA77_D75Z Tags

  • MPSA77_D75Z
  • MPSA77_D75Z PDF
  • MPSA77_D75Z Datasheet
  • MPSA77_D75Z Specifications
  • MPSA77_D75Z Images
  • onsemi
  • onsemi MPSA77_D75Z
  • Buy MPSA77_D75Z
  • MPSA77_D75Z Price
  • MPSA77_D75Z Distributor
  • MPSA77_D75Z Supplier
  • MPSA77_D75Z Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER