onsemi MPSW01G

Overview

MPSW01G from onsemi is an NPN silicon general-purpose bipolar junction transistor in TO-92 package, rated for 1.0 W total device dissipation at TA = 25°C, 30 V collector-emitter breakdown voltage (V(BR)CEO), 1000 mA continuous collector current, and DC current gain (hFE) of 55–60 at IC = 10 mA. It serves as a medium-power switching or linear amplification element in low-voltage power supplies and relay drivers.

For engineers reviewing the MPSW01G datasheet, pinout, applications, or equivalent options, key selection considerations include its 30 V VCEO rating, 1.0 W ambient-rated power dissipation, TO-92 thermal resistance (RJA = 125°C/W), and confirmed Pb-free packaging per ON Semiconductor's Rev. 6 datasheet.

Technical Context

The MPSW01G operates as a discrete NPN BJT with fixed emitter-base and collector-base junction structures optimized for high-current switching up to 1 A. Its saturation voltage VCE(sat) ≤ 0.5 V at IC = 1000 mA / IB = 100 mA ensures low conduction loss in saturated switch configurations.

It exhibits fT = 50 MHz at IC = 50 mA, VCE = 10 V, supporting moderate-frequency amplification or pulse switching. Output capacitance Cobo ≤ 20 pF at VCB = 10 V enables stable operation in <10 MHz digital and analog signal paths without excessive Miller effect.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-10, Style 1), 3-lead through-hole plastic package with bent leads, Pb-free compliant (indicated by "G" suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Compared with BC337-40 and MPSA06, the MPSW01G uniquely balances 1 A current handling, 30 V breakdown, and 1.0 W ambient dissipation in a standard TO-92 footprint-making it optimal for cost-sensitive, medium-power switching where both current and thermal performance matter.

Availability

MPSW01G is available at Aetrix Electronics and suitable for industrial relay drivers, low-voltage DC power switches, LED array drivers, and linear voltage regulator pass elements requiring stable component supply and RoHS-compliant packaging.

Supply support for MPSW01G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPSW01G belongs to onsemi's legacy general-purpose bipolar transistor product line, designed specifically for cost-effective, high-reliability switching and amplification in industrial controls, power management, and interface circuits.

FAQ

What is the maximum collector-emitter voltage rating for the MPSW01G?

The MPSW01G has a guaranteed minimum collector-emitter breakdown voltage V(BR)CEO of 30 Vdc at IC = 10 mAdc and IB = 0, as specified in the official onsemi datasheet Rev. 6. This rating defines the absolute maximum voltage the device can block in open-base configuration before avalanche onset, and must be respected with appropriate safety margin in circuit design. The MPSW01G is not rated for 40 V operation-only the MPSW01A variant supports that higher rating.

Is the MPSW01G pin-compatible with the MPSW01A?

Yes, the MPSW01G and MPSW01A share identical TO-92 package dimensions, pinout (Emitter-Base-Collector on pins 1-2-3), and mechanical marking layout. However, they differ electrically: MPSW01G is the Pb-free version of the MPSW01 with 30 V V(BR)CEO, while MPSW01AG is the Pb-free version of the MPSW01A with 40 V rating. The MPSW01G cannot substitute for MPSW01A in 40 V applications due to its lower voltage rating, despite identical pinout.

What is the thermal resistance junction-to-ambient (RJA) for the MPSW01G?

The MPSW01G has a thermal resistance of RJA = 125°C/W when mounted on a standard FR-4 PCB with no heatsink, per the onsemi datasheet. This value assumes natural convection cooling and defines how much the junction temperature rises above ambient per watt of dissipated power. For sustained 1.0 W operation, ambient temperature must remain below +125°C to avoid exceeding the +150°C maximum junction temperature TJ(max).

Does the MPSW01G support 1 A continuous collector current in all operating conditions?

The MPSW01G is rated for IC = 1000 mAdc continuous under the condition that case temperature TC ≤ 25°C or ambient temperature TA ≤ 25°C with appropriate derating. At higher temperatures, current must be reduced per the 8.0 mW/°C derating factor above 25°C ambient. For example, at TA = 75°C, maximum allowable IC drops to approximately 600 mA to stay within thermal limits. The MPSW01G datasheet confirms this behavior in the "Total Device Dissipation @ TA = 25°C" specification.

What does the "G" suffix in MPSW01G signify?

The "G" suffix in MPSW01G indicates full compliance with the RoHS Directive 2011/65/EU, meaning the device uses Pb-free terminations and packaging materials. This is explicitly confirmed in the onsemi datasheet's ordering information table and marking diagram, where "G" denotes Pb-free packaging for TO-92 devices. The MPSW01G is functionally identical to the legacy MPSW01 except for the absence of lead in solderable surfaces and internal plating.