onsemi MPSW06G

Overview

MPSW06G from onsemi is an NPN silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-power analog and digital circuits. It delivers 80 V_CEO, 500 mA continuous collector current, 2.5 W total dissipation at T_C = 25°C, DC current gain (h_FE) ≥60 at I_C = 250 mA, and f_T = 50 MHz - enabling use in audio preamplifiers, relay drivers, and low-speed logic interface stages.

For engineers reviewing the MPSW06G datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V breakdown rating, TO-92 thermal performance (R_JC = 50°C/W), Pb-free bulk packaging, and verified operation across −55°C to +150°C junction temperature range.

Technical Context

The MPSW06G operates as a medium-voltage, medium-current NPN BJT with fixed linear gain characteristics and defined saturation behavior: V_CE(sat) ≤ 0.4 V at I_C = 250 mA/I_B = 10 mA and V_BE(sat) ≤ 1.2 V under same conditions. Its f_T = 50 MHz supports audio-frequency amplification and low-speed switching up to ~10 MHz.

Thermal design is constrained by R_JA = 125°C/W (ambient) and R_JC = 50°C/W (case), requiring heatsinking or derating above 25°C ambient. Safe operating area (SOA) curves confirm stable operation up to 500 mA at V_CE ≤ 10 V in DC mode, with second-breakdown-limited pulse capability.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-10, Style 17), Pb-free, through-hole mounting. Standard lead form is straight-lead bulk pack (5000 units).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC548B and MMBT5551, the MPSW06G uniquely balances 80 V breakdown, 500 mA current, 2.5 W case-rated power, and TO-92 through-hole compatibility - making it optimal for robust, serviceable, mid-voltage discrete amplifier and switch implementations.

Availability

MPSW06G is available at Aetrix Electronics and suitable for audio preamplifiers, relay driver circuits, and logic-level translation applications requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for MPSW06G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPSW06G belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for reliability in cost-sensitive, high-volume linear and switching applications across industrial controls and legacy equipment.

FAQ

What is the maximum continuous collector current rating for the MPSW06G?

The MPSW06G is rated for 500 mAdc continuous collector current at T_A = 25°C. Derating is required above this temperature per the 8.0 mW/°C ambient dissipation curve. At T_C = 25°C, it supports 2.5 W dissipation, allowing higher current under heatsinked conditions. Always verify actual junction temperature using R_JA = 125°C/W or R_JC = 50°C/W depending on thermal path. The MPSW06G must not exceed its SOA limits during transient operation.

Is the MPSW06G pin-compatible with the MPSW05G?

Yes, the MPSW06G and MPSW05G share identical TO-92 package (Style 17), pinout (pin 1 = base, pin 2 = collector, pin 3 = emitter), and mechanical dimensions. The only functional difference is V_CEO/V_CBO: 80 V for MPSW06G versus 60 V for MPSW05G. All other electrical parameters - including h_FE, V_CE(sat), f_T, and thermal ratings - are identical. The MPSW06G can replace MPSW05G in any design requiring higher voltage margin.

Does the MPSW06G meet RoHS requirements?

Yes, the MPSW06G is explicitly marked as Pb-free in the official onsemi documentation and shipped in Pb-free TO-92 packaging. The "G" suffix denotes RoHS-compliant construction per EU Directive 2011/65/EU. Lead finish is matte tin, and all homogeneous materials comply with maximum concentration values for Cd, Pb, Hg, Cr(VI), PBB, and PBDE. Full compliance documentation is available via onsemi's website under document number MPSW05/D.

What is the typical DC current gain (h_FE) of the MPSW06G at operating conditions?

The MPSW06G guarantees h_FE ≥60 when tested at I_C = 250 mAdc and V_CE = 1.0 Vdc. At lower currents (e.g., I_C = 50 mAdc), h_FE rises to ≥80. Gain varies with temperature and collector current - decreasing at high I_C (>300 mA) and increasing slightly at elevated T_J. Designers should reference Figure 1 in the MPSW06G datasheet for full h_FE vs. I_C curves across −55°C to +125°C.

Can the MPSW06G be used in switching applications above 1 MHz?

No - the MPSW06G is not recommended for switching above ~10 MHz. Its f_T = 50 MHz indicates usable small-signal gain only up to that frequency; practical hard-switching performance is limited by storage time (t_s) and fall time (t_f), which are unspecified but typical of general-purpose BJTs. For >100 kHz PWM or RF switching, MOSFETs like the 2N7002 or BSS138 offer superior speed and gate-drive simplicity. The MPSW06G excels in audio, relay, and low-speed logic applications.