Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MPSW13RLRA

Part No.:
MPSW13RLRA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Long Body, Formed Leads
Datasheet:
AetrixMPSW13RLRA.pdf
Description:
TRANS NPN DARL 30V 1A TO92
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,285

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MPSW13RLRA from onsemi is an NPN silicon Darlington transistor in a TO-92 package, rated for 30 VCE, 1.0 A continuous collector current, and 1.0 W dissipation at TA = 25°C, designed for low-power switching and amplification in relay drivers, LED drivers, and small-signal interface circuits.

For engineers reviewing the MPSW13RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include its high DC current gain (hFE = 5,000–10,000 at IC = 10–100 mA), low VCE(sat) ≤ 1.5 V, and thermal resistance RJA = 125°C/W - critical for thermally constrained PCB layouts.

Technical Context

The MPSW13RLRA implements a monolithic NPN Darlington pair with integrated base-emitter resistor network absent - requiring external base drive control. It operates in linear and saturated switching modes, with fT = 125 MHz enabling moderate-frequency signal amplification up to ~10 MHz in practical configurations.

Its safe operating area (SOA) is bounded by thermal limit (2.5 W at TC = 25°C), second breakdown, and current limit, with derating of 8 mW/°C above 25°C ambient. Junction temperature range spans −55°C to +150°C, supporting industrial-grade operation without forced cooling.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V - Maximum allowable collector-emitter voltage before breakdown; defines maximum load supply rail compatibility.
IC (cont) 1.0 A - Continuous collector current rating at 25°C ambient; limits sustained load switching capability.
hFE 5,000–10,000 - High DC current gain enables microampere-level base drive for 10–100 mA collector loads, reducing MCU GPIO burden.
VCE(sat) ≤1.5 V @ IC/IB = 1000 - Low saturation voltage minimizes power loss and heat generation in switching applications.
RJA 125°C/W - Thermal resistance from junction to ambient; determines required PCB copper area or heatsinking for 1 W operation.
fT 125 MHz - Current-gain bandwidth product; supports small-signal amplification up to ~10 MHz with usable gain margin.

Pinout & Package

Package: TO-92 (Case 29-10), molded plastic, through-hole mounting. Dimensions per ANSI Y14.5M; lead spacing 2.54 mm (0.100"), body height ≤ 5.21 mm.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Emitter terminal of Darlington pair Common reference node for base drive and load return; connects to ground or low-side return path.
2 (Base) Input control terminal Directly drives the first transistor's base; requires current-limiting resistor to set IB for desired IC.
3 (Collector) Output current terminal Switches high-side loads (e.g., relay coil, LED anode) when used in common-emitter configuration.

Key Features

Feature Design Value
High hFE Darlington architecture Enables single-stage current gain sufficient to drive 100 mA loads with <100 µA base current - simplifies driver stage design.
Low VCE(sat) at high IC Reduces conduction loss to <150 mW at 100 mA, improving efficiency in battery-powered or thermally limited systems.
TO-92 package with tape-and-reel delivery Supports automated through-hole assembly (2,000 units/reel); compatible with standard wave soldering profiles.
−55°C to +150°C operating range Validates use in automotive under-hood, industrial controls, and outdoor equipment without derating penalties below 125°C.

Applications

Relay Driver Circuit LED Constant-Current Sink

Use Scenario: Driving 12 V, 80 mA electromagnetic relay coil from a 3.3 V microcontroller GPIO.

IC Role / Device Role / Timing Role: NPN Darlington switch providing high-current gain and low-saturation switching.

Use Value: Eliminates need for dual-transistor discrete stage; achieves full relay actuation with <100 µA base current.

Use Scenario: Sinking 75 mA through high-brightness white LEDs in signage backlighting.

IC Role / Device Role / Timing Role: Linear current-regulating pass element controlled via analog voltage or PWM-filtered DAC output.

Use Value: Maintains stable LED brightness across supply variations due to high hFE and low VCE(sat) drift.

Small-Signal Amplifier Stage Interface Level Shifter

Use Scenario: Boosting weak sensor signals (e.g., thermistor bridge output) prior to ADC input.

IC Role / Device Role / Timing Role: Common-emitter amplifier with fixed bias network for DC-coupled gain.

Use Value: Delivers >40 dB voltage gain at 1 kHz with minimal component count and no AC coupling capacitors.

Use Scenario: Translating 1.8 V logic outputs to 5 V-compatible inputs in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: Active pull-up switch enabling bidirectional level translation with fast edge response.

Use Value: Supports >1 MHz toggle rates with sub-100 ns propagation delay and rail-to-rail output swing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBT6427LT1G Surface-mount SOT-23 package; lower IC = 500 mA; hFE = 3,000–20,000; RJA = 300°C/W. Requires PCB redesign for SMT placement; unsuitable for >500 mA loads or high-ambient environments without heatsinking. Select when board space is constrained and thermal budget allows higher junction rise per watt.
BC517 Through-hole TO-92; same IC = 1 A; hFE = 20,000–60,000; VCEO = 30 V; RJA = 125°C/W. Higher gain enables even lower base drive, but exhibits greater gain variation across temperature and batch. Prefer for ultra-low-drive applications where gain consistency is less critical than absolute minimum IB.

Compared with MMBT6427LT1G and BC517, the MPSW13RLRA offers balanced trade-offs: robust through-hole manufacturability, predictable gain stability over temperature, and proven thermal performance in legacy designs - making it ideal for cost-sensitive, medium-volume industrial controls.

Availability

MPSW13RLRA is available at Aetrix Electronics and suitable for relay drivers, LED current sinks, small-signal amplifiers, and level-shifting interfaces requiring stable component supply and long-term industrial availability.

Supply support for MPSW13RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The MPSW13RLRA belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliability and ease of use in cost-sensitive, high-volume discrete switching and amplification roles.

FAQ

What is the maximum continuous collector current for MPSW13RLRA at 70°C ambient temperature?

The MPSW13RLRA has a continuous collector current rating of 1.0 A at TA = 25°C, derated linearly at 8 mW/°C above that temperature. At 70°C ambient, the allowable power dissipation drops to 0.64 W, limiting IC to approximately 800 mA assuming VCE(sat) ≈ 1.2 V - verified from the SOA curve in Figure 1 of the MPSW13RLRA datasheet.

Is MPSW13RLRA RoHS-compliant and lead-free?

Yes, the MPSW13RLRA is RoHS-compliant and offered in a lead-free version designated MPSW13RLRAG. The "G" suffix indicates Pb-free packaging per JEDEC J-STD-609, with matte tin lead finish and compatible with standard reflow and wave soldering processes.

Can MPSW13RLRA be used in linear amplifier mode with stable bias?

Yes, the MPSW13RLRA supports linear operation with proper emitter degeneration and thermal stabilization. Its hFE variation is moderate (Figure 2), and VBE(on) remains within 1.8–2.0 V across IC = 10–100 mA, enabling predictable DC bias design - confirmed by the "ON Characteristics" table in the MPSW13RLRA datasheet.

What is the safe operating area (SOA) limitation for pulsed operation of MPSW13RLRA?

The MPSW13RLRA SOA supports 1.0 A at 30 V for 1 ms pulses (duty cycle ≤ 10%), as shown in Figure 1. For longer pulses (100 ms), voltage must be reduced to ≤10 V to avoid second breakdown. These boundaries are validated by onsemi's pulse testing conditions and thermal modeling.

Does MPSW13RLRA have built-in base-emitter shunt resistors?

No, the MPSW13RLRA is a standard Darlington transistor without internal base-emitter resistors. External base biasing components - including current-limiting resistor and optional pull-down - must be added per circuit requirements, as confirmed by the absence of such features in the "Features" section and electrical characteristics tables of the MPSW13RLRA datasheet.

MPSW13RLRA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Power - Max:
1 W
Frequency - Transition:
125MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92 (TO-226)

MPSW13RLRA FAQ

1.How can I place an order for MPSW13RLRA through Aetrix?

Please submit a Request for Quotation (RFQ) for MPSW13RLRA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPSW13RLRA reliable?

The price and inventory of MPSW13RLRA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPSW13RLRA is usually 5 days.

3.What payment methods are accepted for MPSW13RLRA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPSW13RLRA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPSW13RLRA?

MPSW13RLRA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPSW13RLRA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPSW13RLRA?

For technical support, including MPSW13RLRA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPSW13RLRA requirements.

6.How does Aetrix verify that MPSW13RLRA is sourced from the original manufacturer or authorized distributors?

All MPSW13RLRA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPSW13RLRA meets industry standards.

7.What is the process for return or replacement of MPSW13RLRA?

All MPSW13RLRA units undergo pre-shipment inspection (PSI). If there is an issue with MPSW13RLRA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPSW13RLRA part is unused and in its original packaging.

Return procedure for MPSW13RLRA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MPSW13RLRA Tags

  • MPSW13RLRA
  • MPSW13RLRA PDF
  • MPSW13RLRA Datasheet
  • MPSW13RLRA Specifications
  • MPSW13RLRA Images
  • onsemi
  • onsemi MPSW13RLRA
  • Buy MPSW13RLRA
  • MPSW13RLRA Price
  • MPSW13RLRA Distributor
  • MPSW13RLRA Supplier
  • MPSW13RLRA Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER