My Inquiry
My Account
onsemi MPSW45RLRE
,TO-226_bentlead.jpg)
- Part No.:
- MPSW45RLRE
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Datasheet:
-
MPSW45RLRE.pdf
- Description:
- TRANS NPN DARL 40V 1A TO92
- Quantity:
- Payment:
- Shipping:
Inventory:9,273
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MPSW45RLRE from onsemi is an NPN silicon Darlington transistor in a TO-92 package, rated for 1.0 W at TA = 25°C and 2.5 W at TC = 25°C, with VCEO = 40 V, IC = 1.0 A, and hFE ≥ 25,000 at IC = 200 mA. It serves as a high-gain switching or linear amplification device in low-to-medium power interface circuits, such as relay drivers and sensor signal conditioning stages.
For engineers reviewing the MPSW45RLRE datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture for high current gain, thermal derating behavior (8 mW/°C above 25°C ambient), TO-92 mechanical compatibility, and noise performance in low-level analog front-ends.
Technical Context
The MPSW45RLRE implements a monolithic NPN Darlington pair with integrated base-emitter resistor network absent - external base drive is required. Its fT = 100 MHz enables operation beyond audio frequencies while maintaining high DC gain, and its low VCE(sat) ≤ 1.5 V at IC = 1.0 A / IB = 2.0 mA supports efficient saturated switching.
Thermal design relies on RθJA = 125°C/W and RθJC = 50°C/W, with safe operating area limited by second breakdown at high VCE/IC combinations. Noise characteristics are specified across 10 Hz–15.7 kHz bandwidth, with en ≈ 1.0 nV/√Hz at RS = 1 kΩ and IC = 1.0 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines upper rail limit in switching applications. |
| IC (cont.) | 1.0 A - Continuous collector current rating; sets maximum load drive capability without forced cooling. |
| hFE | 25,000 min @ IC = 200 mA - High DC current gain reduces required base drive current, easing microcontroller GPIO interfacing. |
| VCE(sat) | ≤1.5 V @ IC = 1.0 A, IB = 2.0 mA - Low saturation voltage minimizes conduction loss and heat generation in switch-mode operation. |
| fT | 100 MHz - Unity-gain frequency enabling stable small-signal amplification up to mid-VHF range. |
| RθJA | 125°C/W - Junction-to-ambient thermal resistance; determines temperature rise per watt dissipated in still air, critical for derating. |
Pinout & Package
Package: TO-92 (Case 29−10), straight-lead, Pb-free, 1 W power rating at TA = 25°C. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (per Style 17 marking diagram, confirmed for MPSW45 series).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink node for Darlington output stage | Connected to ground or low-side return path; carries full load current and must be routed with low impedance. |
| 2 (Base) | Control input for Darlington pair | Requires current-limited drive (typically 0.1–2 mA) to achieve full saturation; no internal biasing resistors. |
| 3 (Collector) | High-current output node | Connects to load supply rail; voltage swing limited by VCEO = 40 V and SOA constraints. |
Key Features
| Feature | Design Value |
|---|---|
| Darlington architecture | Delivers >25× higher hFE than single NPN transistors, enabling direct drive from logic-level sources without external gain stages. |
| Low VCE(sat) | Reduces power loss to ≤1.5 W at 1 A load, improving efficiency and relaxing heatsinking requirements in compact designs. |
| 100 MHz fT | Supports stable small-signal amplification up to ~10 MHz with usable gain, suitable for pulse shaping and broadband sensor interfaces. |
| Specified noise performance | en ≈ 1.0 nV/√Hz at 1 kHz enables use in low-noise preamplifier stages where signal integrity is critical. |
| Pb-free TO-92 packaging | Complies with RoHS Directive 2011/65/EU and supports lead-free reflow soldering per J-STD-020, eliminating post-process cleaning. |
Applications
| Relay Driver Circuit | DC Motor Speed Control |
|---|---|
|
Use Scenario: Driving 12 V, 500 mA electromagnetic relay coils from 3.3 V/5 V microcontroller GPIO pins. IC Role / Device Role / Timing Role: High-gain current amplifier acting as interface between low-power logic and inductive load. Use Value: Eliminates need for dual-transistor discrete Darlington or dedicated driver IC, reducing BOM count and PCB area. |
Use Scenario: PWM-controlled speed regulation of small brushed DC motors in portable instrumentation. IC Role / Device Role / Timing Role: Saturated switch modulating motor supply current at 1–20 kHz PWM frequency. Use Value: VCE(sat) ≤ 1.5 V ensures <1.5 W conduction loss at 1 A, minimizing thermal stress during continuous duty cycles. |
| Linear Voltage Regulator Pass Element | Phototransistor Signal Amplifier |
|
Use Scenario: Medium-current pass transistor in adjustable linear regulators delivering up to 800 mA at 5–12 V output. IC Role / Device Role / Timing Role: Series pass element operating in active region to regulate output voltage via feedback loop. Use Value: High hFE allows precise control with minimal base current error, improving load regulation accuracy. |
Use Scenario: Amplifying weak photocurrent (1–100 μA) from ambient light sensors or optocouplers. IC Role / Device Role / Timing Role: Low-noise, high-gain transimpedance amplifier stage converting photodiode current to voltage. Use Value: Specified en ≈ 1.0 nV/√Hz at 1 kHz and low ICBO ≤ 100 nA preserve signal-to-noise ratio in precision analog sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MPSW45A | VCEO = 50 V (vs. 40 V), same TO-92 package and pinout, identical hFE and VCE(sat) specs. | Preferred where higher supply rail tolerance (>40 V) is required, e.g., 48 V industrial control inputs. | Select MPSW45A when system voltage margin exceeds 40 V; otherwise MPSW45RLRE offers optimal cost/performance for ≤40 V rails. |
| BC817-40 | Single NPN transistor (not Darlington), hFE = 250–630, VCEO = 45 V, SOT-23 package, lower power (0.35 W). | Suitable only for low-gain, low-current (<100 mA) switching; cannot replace MPSW45RLRE in high-gain or 1 A load roles. | Choose BC817-40 only for space-constrained, low-power logic-level buffering; not a functional substitute for Darlington gain or current handling. |
Compared with MPSW45A, the MPSW45RLRE trades 10 V lower VCEO for identical gain and saturation performance in Pb-free TO-92 packaging; versus BC817-40, it delivers >40× higher hFE and 3× higher power handling but requires larger footprint and different drive topology.
Availability
MPSW45RLRE is available at Aetrix Electronics and suitable for relay driving, DC motor control, linear regulator pass elements, and phototransistor amplification requiring stable component supply and RoHS-compliant packaging.
Supply support for MPSW45RLRE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MPSW45RLRE belongs to onsemi's legacy discrete bipolar transistor family designed for cost-sensitive, medium-power interface and amplification applications where high DC gain and robust thermal performance are essential.
FAQ
What is the maximum continuous collector current for MPSW45RLRE?
The MPSW45RLRE is rated for 1.0 A continuous collector current (IC) at ambient temperature TA = 25°C. Derating is required above this temperature at 8 mW/°C, and power dissipation must remain within the 1.0 W ambient-limited or 2.5 W case-limited envelope depending on mounting conditions. Exceeding these limits risks thermal runaway or parametric shift.
Does MPSW45RLRE have built-in base-emitter resistors?
No, the MPSW45RLRE is a bare Darlington transistor without internal base-emitter or base-collector resistors. External base current must be supplied through a series resistor or active driver circuit. This allows flexible biasing but requires careful calculation of RB to ensure sufficient IB for saturation at the target IC.
What is the pin configuration of MPSW45RLRE in TO-92 package?
The MPSW45RLRE uses TO-92 Style 17 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches the standard NPN Darlington orientation shown in the onsemi mechanical drawings and differs from common emitter-up configurations. Correct orientation is critical to avoid reverse-bias damage during PCB layout.
Can MPSW45RLRE be used in linear amplification applications?
Yes, the MPSW45RLRE supports linear operation with specified noise voltage (en ≈ 1.0 nV/√Hz), fT = 100 MHz, and stable hFE across IC = 0.1–1.0 A. Its low VCE(sat) and high gain make it suitable for low-noise preamplifiers and active filters, provided thermal management and SOA compliance are verified per Figure 13 in the datasheet.
Is MPSW45RLRE RoHS compliant and lead-free?
Yes, MPSW45RLRE is explicitly marked as Pb-free in the onsemi datasheet and ordering information, with "G" suffix indicating RoHS-compliant packaging. It meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for lead-free reflow and is compatible with standard SnAgCu solder profiles.
MPSW45RLRE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 2mA, 1A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25000 @ 200mA, 5V
- Power - Max:
- 1 W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
MPSW45RLRE FAQ
1.How can I place an order for MPSW45RLRE through Aetrix?
Please submit a Request for Quotation (RFQ) for MPSW45RLRE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MPSW45RLRE reliable?
The price and inventory of MPSW45RLRE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPSW45RLRE is usually 5 days.
3.What payment methods are accepted for MPSW45RLRE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPSW45RLRE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MPSW45RLRE?
MPSW45RLRE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MPSW45RLRE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MPSW45RLRE?
For technical support, including MPSW45RLRE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPSW45RLRE requirements.
6.How does Aetrix verify that MPSW45RLRE is sourced from the original manufacturer or authorized distributors?
All MPSW45RLRE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPSW45RLRE meets industry standards.
7.What is the process for return or replacement of MPSW45RLRE?
All MPSW45RLRE units undergo pre-shipment inspection (PSI). If there is an issue with MPSW45RLRE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MPSW45RLRE part is unused and in its original packaging.
Return procedure for MPSW45RLRE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MPSW45RLRE Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
