onsemi MPSW63

Overview

MPSW63 from onsemi is a PNP silicon Darlington transistor optimized for low-power switching and amplification in linear and saturated-mode applications, with −30 V C-E breakdown voltage, −500 mA continuous collector current, 1.0 W power dissipation at 25°C ambient, and DC current gain (h_FE) of 5,000–10,000 at −10 mA collector current - commonly used in relay drivers, LED matrix controllers, and sensor interface stages.

For engineers reviewing the MPSW63 datasheet, pinout, applications, or equivalent options, key selection criteria include its high-current-gain Darlington architecture, TO-92 package thermal limits (R_JA = 125°C/W), saturation voltage behavior under IC/IB = 100, and compatibility with legacy bipolar logic-level drive circuits.

Technical Context

The MPSW63 integrates two cascaded PNP transistors in a monolithic Darlington configuration, delivering high DC current gain while maintaining defined saturation characteristics (V_CE(sat) ≤ −1.5 V at −100 mA/−0.1 mA). Its junction temperature range spans −55°C to +150°C, supporting operation in industrial control environments.

It exhibits f_T = 125 MHz at −10 mA and −5 V, confirming usable small-signal bandwidth beyond typical switching frequencies, and features low leakage (ICBO ≤ −100 nA) with symmetrical −30 V ratings for V_CES and V_CBO, enabling robust reverse-bias margin in bidirectional or floating-node designs.

Key Specifications

Pinout & Package

Package: TO-92 (Case 29-10, Style 1), plastic through-hole package with 3 leads, standardized for manual assembly and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Compared with MMBT6427 and PN2907A, the MPSW63 delivers uniquely high DC gain in a through-hole TO-92 package, making it optimal for cost-sensitive, manually assembled systems requiring minimal base drive and proven thermal reliability up to 150°C junction temperature.

Availability

MPSW63 is available at Aetrix Electronics and suitable for relay driver circuits, LED matrix row control, sensor signal conditioning, and thermal cut-off switches requiring stable component supply and long-term industrial availability.

Supply support for MPSW63 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MPSW63 belongs to onsemi's legacy bipolar transistor portfolio designed specifically for cost-effective, high-reliability discrete switching and amplification in industrial control, appliance, and instrumentation applications.

FAQ

What is the maximum continuous collector current rating for the MPSW63?

The MPSW63 has a maximum continuous collector current (I_C) rating of −500 mA at T_A = 25°C. This value decreases with rising ambient temperature per the 8.0 mW/°C derating curve above 25°C. At case temperature (T_C) = 25°C, the device supports up to −2.5 W dissipation, allowing higher transient currents if heatsinked. The MPSW63 must be operated within its Safe Operating Area (SOA) limits shown in Figure 7 of the official datasheet to avoid second breakdown.

Does the MPSW63 have Pb-free construction?

Yes, the MPSW63 is manufactured in a Pb-free TO-92 package compliant with RoHS Directive 2011/65/EU. onsemi confirms that both standard and Pb-free versions share identical electrical and thermal specifications. The Pb-free designation applies to the lead finish and molding compound; no lead content is present in the termination plating or die attach materials used in the MPSW63.

What is the typical DC current gain (h_FE) of the MPSW63 at −100 mA collector current?

At I_C = −100 mA and V_CE = −5.0 V, the MPSW63 exhibits h_FE ≥ 10,000 per the datasheet's "ON CHARACTERISTICS" table. This high gain is characteristic of its Darlington configuration and enables reliable switching with base currents as low as −10 μA. The MPSW63 maintains this performance across its rated junction temperature range of −55°C to +150°C, with gain variation bounded in Figure 1.

Can the MPSW63 be used in linear amplification applications?

Yes, the MPSW63 supports linear-mode operation with verified small-signal parameters including f_T = 125 MHz and predictable h_FE vs. I_C curves (Figure 1). Its low V_BE(on) drift (±2 mV/°C) and stable SOA up to 150°C make it suitable for Class-A audio preamplifiers and precision current sources. However, designers must ensure bias stability and thermal management, as the MPSW63's R_JA = 125°C/W requires adequate copper pour for sustained linear use.

How does the MPSW63 compare to the MPSW64 in terms of DC current gain?

The MPSW64 offers higher DC current gain than the MPSW63: at I_C = −10 mA, MPSW64 h_FE is 10,000–20,000 versus 5,000–10,000 for the MPSW63; at I_C = −100 mA, MPSW64 h_FE remains ≥20,000 while MPSW63 drops to ≥10,000. Both share identical voltage ratings, package, pinout, and thermal specs. The MPSW63 is designated as onsemi's Preferred Device for general-purpose use, balancing gain, cost, and availability.