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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MPSW63G

Name: MPSW63G
Brand: onsemi
SKU: MPSW63G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MPSW63G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: MPSW63G.pdf

Description:: TRANS PNP DARL 30V 0.5A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MPSW63G from onsemi is a PNP silicon Darlington transistor optimized for low-power switching and amplification in linear and saturated-mode applications, with −30 V C-E breakdown voltage, −500 mA continuous collector current, 1.0 W ambient-rated power dissipation, and DC current gain (h_FE) up to 10,000 at −10 mA IC. It is commonly used in relay drivers, LED matrix controllers, and low-voltage power supply regulation circuits.

For engineers reviewing the MPSW63G datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed high h_FE, low V_CE(sat) under moderate drive, thermal derating behavior, TO-92 package compatibility, and safe operating area limits across −55°C to +150°C junction temperature range.

Technical Context

The MPSW63G implements a monolithic PNP Darlington pair with integrated base-emitter resistor network absent - requiring external base current control. Its high h_FE enables microampere-level base drive for milliampere collector loads, while its −1.5 V max V_CE(sat) at −100 mA/−0.1 mA ensures efficient conduction in low-voltage logic-interfaced switches.

Thermal design relies on R_JA = 125°C/W and R_JC = 50°C/W, supporting operation up to 2.5 W at case temperature with proper heatsinking. The device exhibits f_T = 125 MHz, confirming usable small-signal bandwidth despite Darlington topology limitations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - Maximum allowable collector-to-emitter voltage before avalanche breakdown in common-emitter configuration
I_C (cont)	−500 mA - Continuous DC collector current rating at T_A = 25°C; derates 8 mW/°C above ambient
h_FE	5,000–10,000 - DC current gain range at I_C = −10 mA, V_CE = −5 V; enables ultra-low base drive requirements
V_CE(sat)	≤ −1.5 V - Collector-emitter saturation voltage at I_C = −100 mA, I_B = −0.1 mA; defines conduction loss in switching mode
f_T	125 MHz - Current-gain bandwidth product at I_C = −10 mA, V_CE = −5 V; indicates usable small-signal frequency limit
R_JA	125°C/W - Junction-to-ambient thermal resistance in free-air; determines maximum power before thermal runaway at given ambient
T_J Range	−55°C to +150°C - Validated operating junction temperature span; supports industrial and automotive under-hood environments

Pinout & Package

Package: TO-92 (Case 29-10, Style 1), molded plastic with 3-lead vertical mounting configuration. Standard lead finish is Pb-free per J-STD-609.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitting terminal of internal PNP Darlington pair	Serves as current sink reference; connects to system ground or negative rail in high-side switch configurations
2 (Base)	Control input for both PNP transistors in cascade	Requires externally sourced negative current to turn on; no internal biasing resistor
3 (Collector)	Current output node of Darlington structure	Connects to load anode or positive supply rail; handles full switched load current

Key Features

Feature	Design Value
High DC current gain	h_FE ≥ 5,000 at −10 mA enables single-stage switching from µA-level logic outputs
Low saturation voltage	V_CE(sat) ≤ −1.5 V at −100 mA/−0.1 mA reduces conduction loss and self-heating in power-switching roles
Wide temperature operation	Rated for −55°C to +150°C junction operation supports deployment in uncontrolled ambient environments
Pb-free packaging	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609; no lead content in terminations or mold compound
TO-92 mechanical standardization	Compatible with legacy through-hole assembly equipment and PCB footprints defined by JEDEC TO-226AE

Applications

Relay Driver Circuit	LED Matrix Row Selector
Use Scenario: Driving electromagnetic relays with coil voltages up to 24 VDC and hold currents of 20–80 mA. IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing isolated current amplification between microcontroller GPIO and relay coil. Use Value: Eliminates need for discrete two-transistor stages; achieves full relay actuation with <100 µA base drive due to h_FE ≥ 5,000.	Use Scenario: Selecting active rows in multiplexed 8×8 red/green LED displays powered from 5 V rails. IC Role / Device Role / Timing Role: Row-side current sink enabling dynamic scanning at 1–2 kHz refresh rates without ghosting. Use Value: Low V_CE(sat) minimizes voltage drop across row driver, preserving forward voltage margin for LEDs and reducing thermal load on PCB.
Linear Voltage Regulator Pass Element	Low-Voltage Power Supply Sequencer
Use Scenario: Acting as series pass transistor in adjustable 3.3 V/500 mA LDO designs using LM317 feedback topology. IC Role / Device Role / Timing Role: Main current-handling element regulating output voltage via emitter-follower configuration. Use Value: High h_FE allows stable regulation with minimal dropout voltage drift over load and temperature variations.	Use Scenario: Enabling controlled power-up sequencing of dual-rail FPGA core/I/O supplies in embedded systems. IC Role / Device Role / Timing Role: Delayed-turn-on switch triggered by RC-timed enable signal to stagger 1.2 V and 3.3 V rail activation. Use Value: Predictable V_BE(on) ≈ −2.0 V and tight h_FE distribution ensure repeatable delay timing across production units.

Relay Driver Circuit

LED Matrix Row Selector

Use Scenario: Driving electromagnetic relays with coil voltages up to 24 VDC and hold currents of 20–80 mA.

IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing isolated current amplification between microcontroller GPIO and relay coil.

Use Value: Eliminates need for discrete two-transistor stages; achieves full relay actuation with <100 µA base drive due to h_FE ≥ 5,000.

Use Scenario: Selecting active rows in multiplexed 8×8 red/green LED displays powered from 5 V rails.

IC Role / Device Role / Timing Role: Row-side current sink enabling dynamic scanning at 1–2 kHz refresh rates without ghosting.

Use Value: Low V_CE(sat) minimizes voltage drop across row driver, preserving forward voltage margin for LEDs and reducing thermal load on PCB.

Linear Voltage Regulator Pass Element

Low-Voltage Power Supply Sequencer

Use Scenario: Acting as series pass transistor in adjustable 3.3 V/500 mA LDO designs using LM317 feedback topology.

IC Role / Device Role / Timing Role: Main current-handling element regulating output voltage via emitter-follower configuration.

Use Value: High h_FE allows stable regulation with minimal dropout voltage drift over load and temperature variations.

Use Scenario: Enabling controlled power-up sequencing of dual-rail FPGA core/I/O supplies in embedded systems.

IC Role / Device Role / Timing Role: Delayed-turn-on switch triggered by RC-timed enable signal to stagger 1.2 V and 3.3 V rail activation.

Use Value: Predictable V_BE(on) ≈ −2.0 V and tight h_FE distribution ensure repeatable delay timing across production units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSW64G	Higher h_FE (10,000–20,000) and identical ratings; same TO-92 package and pinout	Preferred where lower base drive or tighter gain tolerance is required; otherwise functionally interchangeable	Select MPSW64G when designing for worst-case base current budget <50 µA at full load
PN2907A	Standard PNP (not Darlington); h_FE = 100–300; higher V_CE(sat) (~−0.5 V at −100 mA); same TO-92 footprint	Used where gain is less critical but faster switching or lower storage time is needed	Choose PN2907A only if circuit can tolerate higher base drive and reduced current gain stability

Compared with MPSW63G, MPSW64G offers higher guaranteed h_FE without layout or thermal changes, while PN2907A trades gain for improved switching speed and lower V_BE - making it suitable only where Darlington-specific advantages are unnecessary.

Availability

MPSW63G is available at Aetrix Electronics and suitable for relay drivers, LED matrix controllers, and linear regulator pass elements requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant through-hole packaging.

Supply support for MPSW63G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.

The MPSW63G belongs to onsemi's general-purpose bipolar transistor family, designed specifically for cost-sensitive, high-reliability linear and switching applications where high DC gain and robust thermal performance in TO-92 packages are essential.

FAQ

What is the maximum collector-emitter voltage rating for MPSW63G?

The MPSW63G has a maximum collector-emitter voltage rating (V_(BR)CES) of −30 Vdc, tested at I_C = −100 μAdc with V_BE = 0. This rating applies under open-base conditions and defines the absolute upper limit before avalanche breakdown occurs in the MPSW63G's PNP Darlington structure.

Does MPSW63G include an internal base-emitter resistor?

No, the MPSW63G does not incorporate any internal base-emitter resistor. It is a bare Darlington pair requiring external base current control. This distinguishes MPSW63G from digital transistors like the NSM1012MR, which integrate bias resistors - making MPSW63G suitable for precision gain-critical or variable-drive applications.

What is the thermal resistance from junction to ambient for MPSW63G?

The MPSW63G has a specified thermal resistance from junction to ambient (R_JA) of 125°C/W under standard free-air conditions. This value assumes no PCB copper pour or heatsinking and must be derated linearly at 8 mW/°C above 25°C ambient to maintain safe junction temperatures within the −55°C to +150°C operational range.

Can MPSW63G be used in place of MPSW64G without circuit modification?

Yes, MPSW63G and MPSW64G share identical pinout, package, voltage/current ratings, and thermal specifications. The only functional difference is h_FE: MPSW63G guarantees 5,000–10,000, while MPSW64G guarantees 10,000–20,000. Circuits designed for MPSW63G will operate reliably with MPSW64G, though base drive may be marginally reduced.

What is the typical base-emitter on voltage for MPSW63G at rated current?

The MPSW63G exhibits a typical base-emitter on voltage (V_BE(on)) of −2.0 Vdc at I_C = −100 mAdc and V_CE = −5.0 Vdc. This reflects the stacked V_BE drops of both PNP transistors in the Darlington configuration and must be accounted for in base drive voltage headroom calculations for the MPSW63G.

MPSW63G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 10000 @ 100mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 125MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

MPSW63G FAQ

1.How can I place an order for MPSW63G through Aetrix?

Please submit a Request for Quotation (RFQ) for MPSW63G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPSW63G reliable?

The price and inventory of MPSW63G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPSW63G is usually 5 days.

3.What payment methods are accepted for MPSW63G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPSW63G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPSW63G?

MPSW63G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPSW63G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPSW63G?

For technical support, including MPSW63G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPSW63G requirements.

6.How does Aetrix verify that MPSW63G is sourced from the original manufacturer or authorized distributors?

All MPSW63G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPSW63G meets industry standards.

7.What is the process for return or replacement of MPSW63G?

All MPSW63G units undergo pre-shipment inspection (PSI). If there is an issue with MPSW63G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPSW63G part is unused and in its original packaging.

Return procedure for MPSW63G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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