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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MPSW63RLRA

Name: MPSW63RLRA
Brand: onsemi
SKU: MPSW63RLRA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MPSW63RLRA

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: MPSW63RLRA.pdf

Description:: TRANS PNP DARL 30V 0.5A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MPSW63RLRA from onsemi is a PNP silicon Darlington transistor optimized for low-current switching and amplification in signal conditioning and interface circuits, with −30 V C-E breakdown voltage, −500 mA continuous collector current, 5,000–10,000 DC current gain at −10 mA, −1.5 V saturation voltage at −100 mA/−0.1 mA drive, and TO-92 (CASE 29-10) package. It serves in relay drivers, LED matrix controllers, and low-power logic-level translators.

For engineers reviewing the MPSW63RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed hFE ≥5,000 at low I_C, V_CE(sat) ≤−1.5 V under defined drive conditions, thermal resistance R_JA = 125°C/W, and Pb-free TO-92 compatibility for consumer and industrial PCB assembly.

Technical Context

The MPSW63RLRA implements a monolithic PNP Darlington pair with integrated base-emitter resistor network absent - requiring external base bias control. Its high hFE enables microampere-level base drive while sustaining milliampere load currents, and its −30 V V_(BR)CES rating supports operation in 24 V rail systems with margin.

Thermal design relies on R_JC = 50°C/W and R_JA = 125°C/W values, permitting 1.0 W dissipation at T_A = 25°C with linear derating. The device operates across −55°C to +150°C junction temperature range and exhibits f_T = 125 MHz, confirming suitability for audio-frequency and low-MHz switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CES	−30 V - Withstands 24 V system transients without breakdown
I_C (continuous)	−500 mA - Supports medium-current loads like small relays or LED strings
h_FE	5,000–10,000 @ −10 mA - Enables <10 μA base drive for 10 mA output
V_CE(sat)	≤−1.5 V @ −100 mA/−0.1 mA - Minimizes power loss in saturated switch mode
f_T	125 MHz - Supports audio-band amplification and fast digital edge response
R_JA	125°C/W - Requires minimal heatsinking in ambient PCB layouts
T_J range	−55°C to +150°C - Qualified for automotive under-hood and industrial control environments

Pinout & Package

Package: TO-92 (CASE 29-10), Pb-free, through-hole mounting. Standard lead form with 0.1" pitch, 2.54 mm lead spacing, and 4.44–5.21 mm body height.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for Darlington output stage	Connected to system ground or negative rail; carries full load current
2 (Base)	Control input for internal Darlington pair	Receives low-current drive; no internal bias resistor - requires external pull-up/down
3 (Collector)	High-side current source node	Connected to positive supply; supplies current to load when active

Key Features

Feature	Design Value
High DC current gain	h_FE ≥5,000 at −10 mA ensures ultra-low base drive requirements
Low saturation voltage	V_CE(sat) ≤−1.5 V reduces conduction loss in switching applications
Wide operating temperature	−55°C to +150°C junction range supports harsh-environment deployment
TO-92 Pb-free packaging	Meets RoHS and JEDEC J-STD-020 reflow standards for lead-free assembly

Applications

Relay Driver Circuit	LED Matrix Row Driver
Use Scenario: Driving 12 V electromagnetic relay coils with microcontroller GPIO outputs. IC Role / Device Role / Timing Role: High-gain PNP Darlington switch translating 3.3 V logic to 12 V coil activation. Use Value: Eliminates need for discrete BJT staging; −100 μA base current suffices for 50 mA coil hold.	Use Scenario: Scanning 8×8 red LED matrix using multiplexed row selection. IC Role / Device Role / Timing Role: Row-side current sink amplifier enabling uniform brightness across rows. Use Value: Maintains consistent V_CE(sat) across scan cycles, minimizing duty-cycle-dependent dimming.
Logic-Level Translator	Low-Power Sensor Interface
Use Scenario: Converting open-drain I²C signals from 3.3 V MCU to 5 V peripheral side. IC Role / Device Role / Timing Role: Bidirectional level-shifting element using active pull-up configuration. Use Value: Delivers <10 ns propagation delay due to f_T = 125 MHz and low C_obo.	Use Scenario: Amplifying thermistor or photodiode output into ADC input of battery-powered sensor node. IC Role / Device Role / Timing Role: Low-noise, high-input-impedance preamplifier stage. Use Value: h_FE stability over −40°C to +85°C ensures calibration retention across operating range.

Relay Driver Circuit

LED Matrix Row Driver

Use Scenario: Driving 12 V electromagnetic relay coils with microcontroller GPIO outputs.

IC Role / Device Role / Timing Role: High-gain PNP Darlington switch translating 3.3 V logic to 12 V coil activation.

Use Value: Eliminates need for discrete BJT staging; −100 μA base current suffices for 50 mA coil hold.

Use Scenario: Scanning 8×8 red LED matrix using multiplexed row selection.

IC Role / Device Role / Timing Role: Row-side current sink amplifier enabling uniform brightness across rows.

Use Value: Maintains consistent V_CE(sat) across scan cycles, minimizing duty-cycle-dependent dimming.

Logic-Level Translator

Low-Power Sensor Interface

Use Scenario: Converting open-drain I²C signals from 3.3 V MCU to 5 V peripheral side.

IC Role / Device Role / Timing Role: Bidirectional level-shifting element using active pull-up configuration.

Use Value: Delivers <10 ns propagation delay due to f_T = 125 MHz and low C_obo.

Use Scenario: Amplifying thermistor or photodiode output into ADC input of battery-powered sensor node.

IC Role / Device Role / Timing Role: Low-noise, high-input-impedance preamplifier stage.

Use Value: h_FE stability over −40°C to +85°C ensures calibration retention across operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSW64RLRA	Higher h_FE (10,000–20,000) and same V_(BR)CES/I_C; identical package and pinout	Better suited for ultra-low-base-drive designs where <1 μA base current is required	Select MPSW64RLRA only if h_FE >10,000 is mandatory; otherwise MPSW63RLRA offers tighter gain distribution
PN2907A	Standard PNP BJT (not Darlington); h_FE = 100–300; higher V_CE(sat) (~−1.8 V); same TO-92 footprint	Requires ~10× more base current; unsuitable for micro-power or high-gain analog stages	Choose PN2907A only when Darlington gain is unnecessary and cost is primary constraint

Compared with MPSW64RLRA and PN2907A, the MPSW63RLRA delivers optimal balance of guaranteed minimum h_FE = 5,000, −1.5 V V_CE(sat), and production consistency - making it preferred for mid-volume industrial controls where predictable turn-on behavior and thermal margin are critical.

Availability

MPSW63RLRA is available at Aetrix Electronics and suitable for relay driver modules, LED display subsystems, and low-power sensor interface circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant through-hole assembly.

Supply support for MPSW63RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The MPSW63RLRA belongs to onsemi's legacy discrete bipolar transistor product line, engineered for reliable, high-gain switching in cost-sensitive, space-constrained analog and mixed-signal systems.

FAQ

What is the maximum safe collector current for MPSW63RLRA in continuous DC operation?

The MPSW63RLRA supports −500 mA continuous collector current at T_A = 25°C with proper PCB copper area. Derating applies above 25°C: 8 mW/°C when mounted on standard FR-4 with minimal copper, or 20 mW/°C with heatsink attachment at case. Always verify junction temperature using R_JA = 125°C/W in your layout before finalizing thermal design for MPSW63RLRA.

Does MPSW63RLRA include an internal base-emitter resistor?

No, the MPSW63RLRA does not integrate any base-emitter resistor. It is a bare Darlington transistor requiring external biasing - either via pull-up resistor for high-side switching or current-limiting series resistor for microcontroller drive. This differs from "digital transistors" like NSV11231R, and confirms the need for explicit base control circuitry in all MPSW63RLRA designs.

Can MPSW63RLRA be used in linear amplifier configurations?

Yes, the MPSW63RLRA can operate in the active region for low-frequency amplification, supported by its f_T = 125 MHz and documented h_FE vs. I_C curves. However, its Darlington structure introduces higher V_BE(on) (−2.0 V typical) and greater thermal sensitivity than single BJTs - so bias networks must include emitter degeneration and temperature compensation when used as an MPSW63RLRA linear amplifier stage.

What is the meaning of "RLRA" in MPSW63RLRA?

The suffix "RLRA" denotes onsemi's tape-and-reel packaging variant for surface-mount compatible automated placement, though the MPSW63RLRA remains a through-hole TO-92 device. "RL" indicates 2,000-unit reel quantity, and "RA" specifies Pb-free finish per J-STD-020. This distinguishes it from bulk-packed MPSW63 or older non-RoHS versions - ensuring compliance for MPSW63RLRA in modern manufacturing lines.

How does MPSW63RLRA compare to MPSW63G in terms of reliability and specification?

The MPSW63RLRA and MPSW63G share identical electrical specifications, thermal ratings, and package dimensions. The "G" suffix historically indicated green/Pb-free compliance prior to industry-wide harmonization; "RLRA" reflects updated onsemi part numbering aligned with JEDEC standards. Both meet the same AEC-Q200 stress test requirements, and no performance or reliability difference exists between MPSW63RLRA and MPSW63G in actual use.

MPSW63RLRA Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 10000 @ 100mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 125MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

MPSW63RLRA FAQ

1.How can I place an order for MPSW63RLRA through Aetrix?

Please submit a Request for Quotation (RFQ) for MPSW63RLRA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MPSW63RLRA reliable?

The price and inventory of MPSW63RLRA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPSW63RLRA is usually 5 days.

3.What payment methods are accepted for MPSW63RLRA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPSW63RLRA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MPSW63RLRA?

MPSW63RLRA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MPSW63RLRA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MPSW63RLRA?

For technical support, including MPSW63RLRA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPSW63RLRA requirements.

6.How does Aetrix verify that MPSW63RLRA is sourced from the original manufacturer or authorized distributors?

All MPSW63RLRA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPSW63RLRA meets industry standards.

7.What is the process for return or replacement of MPSW63RLRA?

All MPSW63RLRA units undergo pre-shipment inspection (PSI). If there is an issue with MPSW63RLRA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MPSW63RLRA part is unused and in its original packaging.

Return procedure for MPSW63RLRA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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