NXP Semiconductors MRF085HR3

Overview

MRF085HR3 from NXP Semiconductors is a high-ruggedness 85 W CW RF power LDMOS transistor operating at 50 Vdc, delivering 25.6 dB power gain and 73.3% drain efficiency at 520 MHz in narrowband configuration, with >65:1 load VSWR tolerance for industrial heating and aerospace VHF communications.

For engineers reviewing the MRF085HR3 datasheet, MRF085HR3 pinout, MRF085HR3 application, or MRF085HR3 equivalent, this page delivers verified electrical specs, ruggedness validation, thermal resistance (0.85 °C/W), ESD protection class (HBM 2 kV, CDM 500 V), and NI-650H-4L package mapping - all confirmed for the R3 tape-and-reel variant.

Technical Context

The MRF085HR3 is a dual-gate, dual-drain lateral MOSFET with source-connected package backside, characterized across 30–1215 MHz using unmatched input/output networks. It supports both single-ended and push-pull configurations with gate threshold voltage of 1.5–3.0 Vdc and quiescent gate voltage of 2.0–3.3 Vdc at IDQ(A+B) = 100 mA.

Thermal design is enabled by its 0.85 °C/W junction-to-case resistance under 85 W CW operation at TC = 85 °C, and it sustains operation up to TJ = +225 °C with integrated ESD protection meeting JESD22-A114 Class 2 and JESD22-C101 Class C2 standards.

Key Specifications

Pinout & Package

The MRF085HR3 is housed in the NI-650H-4L air-cavity ceramic package with exposed source-connected backside. Pin connections are defined per top-view layout: Pin 1 = Drain A, Pin 2 = Gate B, Pin 3 = Drain B, Pin 4 = Gate A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF085H and MRFE6VP61K25H, the MRF085HR3 uniquely combines tape-and-reel readiness (250 units/reel), proven 520 MHz narrowband ruggedness, and NI-650H-4L package compatibility with legacy NXP RF reference designs - making it optimal for volume-manufactured ISM and VHF comms systems.

Availability

MRF085HR3 is available at Aetrix Electronics and suitable for industrial heating systems, VHF broadcast transmitters, and aerospace VOR navigation equipment requiring stable component supply, consistent tape-and-reel logistics, and long-term lifecycle support.

Supply support for MRF085HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The MRF085HR3 belongs to NXP's high-ruggedness RF power LDMOS transistor family, engineered specifically for mission-critical broadband amplification in industrial, scientific, medical, and aerospace applications where reliability under extreme VSWR is non-negotiable.

FAQ

What is the maximum junction temperature rating for the MRF085HR3?

The MRF085HR3 has an operating junction temperature range of –40 °C to +225 °C, validated per NXP's MTTF modeling and thermal characterization in AN1955. This rating enables deployment in high-ambient environments such as enclosed plasma chambers or uncooled avionics bays. The MRF085HR3 maintains specified performance within this range when mounted on a heatsink with appropriate thermal interface material and airflow per the NI-650H-4L mechanical guidelines.

Does the MRF085HR3 require external gate protection diodes?

No, the MRF085HR3 integrates ESD protection meeting JESD22-A114 Class 2 (2000 V HBM) and JESD22-C101 Class C2 (500 V CDM), eliminating the need for external gate protection diodes in standard PCB handling and reflow processes. This integration also extends the usable negative gate-source voltage range, supporting robust Class C operation. The MRF085HR3's internal protection is validated across production lots and does not degrade gain or efficiency.

What is the thermal resistance (RθJC) of the MRF085HR3 and how is it measured?

The MRF085HR3 has a junction-to-case thermal resistance of 0.85 °C/W, measured under CW conditions at TC = 85 °C, 85 W output, 50 Vdc drain supply, and IDQ(A+B) = 100 mA at 520 MHz. This value is derived from calibrated thermal measurement per AN1955 methodology and applies strictly to the NI-650H-4L package with proper mounting pressure and thermal interface. The MRF085HR3's low RθJC enables efficient heat transfer to aluminum or copper heatsinks without forced air in many industrial applications.

Can the MRF085HR3 be operated in push-pull configuration?

Yes, the MRF085HR3 is explicitly characterized for push-pull operation, with matched dual-gate (Gate A/Gate B) and dual-drain (Drain A/Drain B) terminals enabling balanced drive and current sharing. Its symmetrical layout and matched on-resistance ensure <±0.5 dB gain imbalance between sides. The MRF085HR3's push-pull use is validated in NXP's 520 MHz narrowband test fixture and supports improved harmonic suppression and even-order distortion cancellation in broadband amplifiers.

What package type does the MRF085HR3 use and what are its key mechanical features?

The MRF085HR3 uses the NI-650H-4L air-cavity ceramic package, featuring a metal lid, gold-plated leads, and an electrically conductive backside that serves as the source terminal. Its 4-pin top-view layout (Drain A, Gate B, Drain B, Gate A) and standardized footprint allow direct replacement in existing NXP RF reference designs. The MRF085HR3's package supports high-power RF operation up to 225 °C junction temperature and is qualified for reflow soldering per AN1908 guidelines.