NXP Semiconductors MRF101AN-13MHZ

Overview

MRF101AN-13MHZ from NXP Semiconductors is a 13.56 MHz reference circuit board designed to evaluate the MRF101AN RF power LDMOS transistor in industrial, scientific, and medical (ISM) applications. It delivers 130 W CW output at 50 Vdc supply, achieves 27.1 dB power gain and 79.6% drain efficiency, and supports linear amplifier operation for plasma etching and RF heating systems.

For engineers reviewing the MRF101AN-13MHZ datasheet, MRF101AN-13MHZ pinout, MRF101AN-13MHZ application, or MRF101AN-13MHZ equivalent, this reference design provides verified impedance matching networks, thermal management layout, and component-level bill-of-materials for rapid prototyping of 13.56 MHz RF power amplifiers.

Technical Context

The MRF101AN-13MHZ implements a compact 0.7″ × 2.0″ FR4 PCB with integrated input/output matching networks optimized for the MRF101AN's gate-source impedance (25.3 + j10.2 Ω) and drain-load impedance (11.3 – j6.4 Ω) at 13.56 MHz. It uses hand-wound and chip inductors (L1–L4), Murata and ATC capacitors, and a 75 Ω termination resistor for bias and stability.

This board operates under CW conditions at VDD = 50 Vdc, IDQ = 100 mA, and Pin = 0.25 W, enabling full characterization of the MRF101AN's P1dB compression point (128 W), gain flatness, and ruggedness against >65:1 load VSWR - validated per NXP's 13.56 MHz reference circuit specification on page 5 of the MRF101AN data sheet.

Key Specifications

Availability

MRF101AN-13MHZ is available at Aetrix Electronics and suitable for RF plasma generators, industrial induction heaters, and medical MRI RF subsystems requiring stable component supply and proven reference design validation.

Supply support for MRF101AN-13MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in RF power technology.

The MRF101AN-13MHZ belongs to NXP's RF Power LDMOS Transistor Reference Circuit family, engineered to accelerate development of rugged, high-efficiency HF/VHF amplifiers for industrial and medical RF energy applications.

FAQ

What is the MRF101AN-13MHZ used for?

The MRF101AN-13MHZ is a dedicated 13.56 MHz reference circuit board that enables rapid evaluation and implementation of the MRF101AN RF power transistor in high-reliability ISM applications. It provides fully characterized input/output matching, thermal layout, and component values - allowing engineers to validate amplifier performance without custom RF design. The MRF101AN-13MHZ supports immediate bench testing and serves as a foundation for production-grade RF power stages in plasma etching and RF heating systems.

Does the MRF101AN-13MHZ include the MRF101AN transistor?

Yes, the MRF101AN-13MHZ reference circuit board includes one MRF101AN RF power LDMOS transistor (TO-220-3L package, pin 1: Gate, pin 2: Source, pin 3: Drain) mounted and tested per NXP's specification. The board is shipped fully assembled with all passive components, including Murata and ATC capacitors, ATC and Coilcraft inductors, and a KOA Speer 75 Ω resistor - ready for immediate 50 Vdc bias and RF signal injection.

Can the MRF101AN-13MHZ be used at frequencies other than 13.56 MHz?

No - the MRF101AN-13MHZ is specifically optimized for 13.56 MHz operation. Its matching network (including L1–L4, C1–C14, and B1) is tuned to the MRF101AN's measured Zsource (25.3 + j10.2 Ω) and Zload (11.3 – j6.4 Ω) at that frequency. Performance degrades significantly outside ±0.5 MHz due to narrowband component selection and layout parasitics. For other bands, NXP offers separate reference circuits: MRF101AN-27MHZ, MRF101AN-40MHZ, etc.

What thermal performance can be expected from the MRF101AN-13MHZ board?

When operated at 130 W CW output with proper heatsinking (≥0.25°C/W thermal resistance), the MRF101AN-13MHZ maintains case temperature below 77°C, consistent with the MRF101AN's RθJC = 1.1°C/W rating. The board's 2 oz. copper FR4 substrate and exposed source tab provide efficient heat conduction. Thermal derating begins above 25°C ambient, with full 182 W dissipation only guaranteed at TC = 25°C - actual thermal margin depends on airflow, heatsink interface, and mounting pressure.

Is the MRF101AN-13MHZ RoHS compliant and qualified for industrial use?

Yes, the MRF101AN-13MHZ reference circuit complies with RoHS Directive 2011/65/EU and is qualified for industrial operating temperatures (–40°C to +150°C case). All components - including the MRF101AN transistor, Murata/ATC/Coilcraft passives, and KOA Speer resistor - meet industrial-grade reliability standards. NXP's product longevity program guarantees MRF101AN supply for ≥15 years post-launch, ensuring long-term design support for the MRF101AN-13MHZ platform.