NXP Semiconductors MRF101AN-2MHZ4UP

Overview

MRF101AN-2MHZ4UP from NXP Semiconductors is a 100 W CW, 50 V RF power LDMOS transistor optimized for HF/VHF broadband amplification up to 250 MHz. It delivers 130 W output at 13.56 MHz (CW), 27.1 dB power gain, and 79.6% drain efficiency in the NXP reference circuit, serving as the active device in industrial plasma etching and MRI RF power stages.

For engineers reviewing the MRF101AN-2MHZ4UP datasheet, MRF101AN-2MHZ4UP pinout, MRF101AN-2MHZ4UP application, or MRF101AN-2MHZ4UP equivalent, this page provides verified package mapping, ruggedness validation at >65:1 VSWR, thermal impedance data (0.37 °C/W pulsed), ESD protection class (HBM 1B, CDM C3), and frequency-specific matching network impedances for 13.56–230 MHz operation.

Technical Context

This device operates as a common-source RF power amplifier with lateral N-channel enhancement-mode LDMOS structure. Its gate threshold voltage (1.7–2.7 Vdc) and quiescent gate voltage (2.5 Vdc @ 50 Vdd, 100 mA IDQ) enable stable Class AB biasing across HF/VHF bands. Integrated ESD protection extends negative gate-source voltage range for robust Class C operation.

Thermal design is enabled by low junction-to-case thermal resistance (1.1 °C/W CW, 0.37 °C/W pulsed) and a TO-220-3L package with exposed backside acting as source terminal. Load mismatch testing confirms no degradation at >65:1 VSWR under 3 dB overdrive at both 40.68 MHz and 230 MHz.

Key Specifications

Pinout & Package

TO-220-3L package with exposed metal backside serving as source terminal. Mounting tab is electrically connected to source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF101BN, the MRF101AN-2MHZ4UP offers identical RF performance but simplified gate routing in single-ended designs; versus MRFE6VP61K25H, it provides lower-cost, thermally optimized operation for sub-200 W industrial and medical applications without over-engineering.

Availability

MRF101AN-2MHZ4UP is available at Aetrix Electronics and suitable for industrial plasma etching, MRI RF subsystems, and VHF broadcast transmitters requiring stable component supply across long production lifecycles.

Supply support for MRF101AN-2MHZ4UP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The MRF101AN-2MHZ4UP belongs to NXP's RF Power LDMOS transistor family, engineered for rugged, high-efficiency amplification in demanding HF/VHF industrial and medical applications.

FAQ

What is the maximum continuous drain current rating for the MRF101AN-2MHZ4UP?

The MRF101AN-2MHZ4UP does not specify a maximum continuous drain current (ID) rating directly; instead, its safe operating area is defined by maximum ratings including 182 W total device dissipation at TC = 25°C and junction temperature limits of –40 to +175°C. Actual current depends on operating voltage, duty cycle, and thermal management - for example, at 50 Vdc and 130 W CW output, typical IDQ is 100 mA with peak RF current scaling per load impedance.

Does the MRF101AN-2MHZ4UP require external gate protection diodes?

No, the MRF101AN-2MHZ4UP includes integrated ESD protection rated to Human Body Model Class 1B (1000 V) and Charge Device Model Class C3 (1200 V), eliminating the need for external gate protection diodes in standard handling and operational conditions per NXP's application guidance.

What is the recommended gate bias voltage for Class AB operation of the MRF101AN-2MHZ4UP?

The MRF101AN-2MHZ4UP is characterized with a quiescent gate-source voltage (VGS(Q)) of 2.5 Vdc at VDD = 50 Vdc and IDQ = 100 mA. This value is validated across multiple reference circuits (13.56–230 MHz) and serves as the recommended starting point for stable Class AB biasing.

Can the MRF101AN-2MHZ4UP be used in pulsed RF applications?

Yes, the MRF101AN-2MHZ4UP is qualified for pulsed operation, delivering 115 W peak output at 230 MHz with 100 µs pulse width and 20% duty cycle. Its pulsed thermal impedance is specified at 0.37 °C/W, and load mismatch testing confirms no degradation at >65:1 VSWR under 3 dB overdrive in pulsed mode.

What is the input and output capacitance of the MRF101AN-2MHZ4UP at 50 Vds?

At VDS = 50 Vdc, the MRF101AN-2MHZ4UP exhibits typical input capacitance (Ciss) of 149 pF, output capacitance (Coss) of 43.4 pF, and reverse transfer capacitance (Crss) of 0.96 pF - values measured at 1 MHz with VGS = 0 Vdc and critical for matching network design across HF/VHF bands.