NXP Semiconductors MRF101AN-88MHZ

Overview

MRF101AN-88MHZ from NXP Semiconductors is a broadband RF power LDMOS transistor reference circuit optimized for the 87.5–108 MHz VHF band, built around the MRF101AN die in TO-220-3L package. It delivers 115 W CW output power at 98 MHz with 20.6 dB power gain and 76.8% drain efficiency under 50 Vdc bias, supporting FM broadcast, industrial heating, and plasma generation applications.

For engineers reviewing the MRF101AN-88MHZ datasheet, MRF101AN-88MHZ pinout, MRF101AN-88MHZ application, or MRF101AN-88MHZ equivalent, this page provides verified performance data across the full 87.5–108 MHz band, ruggedness validation at >65:1 VSWR, thermal derating guidance, and direct component-level design values for matching networks and biasing.

Technical Context

This reference circuit implements a compact broadband amplifier using the MRF101AN LDMOS transistor in common-source configuration with discrete lumped-element input/output matching networks. It operates at 50 Vdc drain supply and 100 mA quiescent drain current, supporting continuous-wave (CW) operation up to 115 W across the entire 87.5–108 MHz band.

The design features a 3-layer FR4 PCB (0.09″ thick, ε_r = 4.8, 2 oz copper), integrated gate bias network with trimming potentiometer, and ESD-protected layout compliant with Class C linear operation requirements. Harmonic suppression reaches –32 dBc at 2nd harmonic (175 MHz) and –71 dBc at 4th harmonic (350 MHz).

Key Specifications

Pinout & Package

Package: TO-220-3L (leadless variant with exposed backside tab). The tab is electrically connected to the source terminal and serves as primary thermal path and RF ground reference. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplification applications.

Compared with MRF101BN-88MHZ, the MRF101AN-88MHZ offers identical RF performance but standard pinout for single-ended designs; versus MRFE6VP61K25H, it provides lower-cost, compact implementation for fixed-band 88 MHz applications without needing 250 W capability.

Availability

MRF101AN-88MHZ is available at Aetrix Electronics and suitable for FM broadcast transmitters, industrial plasma systems, and medical diathermy generators requiring stable component supply and proven reference design validation.

Supply support for MRF101AN-88MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The MRF101AN product line delivers high-ruggedness, wideband RF power LDMOS transistors designed for mission-critical HF/VHF amplification in broadcast, industrial heating, and medical systems - with 15-year longevity assurance.

FAQ

What is the maximum continuous output power of the MRF101AN-88MHZ reference circuit?

The MRF101AN-88MHZ reference circuit delivers 115 W CW output power at both 98 MHz and 108 MHz within the 87.5–108 MHz band, as measured in the NXP broadband reference circuit under 50 Vdc, 100 mA IDQ, and 1 W input drive conditions.

Does the MRF101AN-88MHZ include biasing components on the reference board?

Yes, the MRF101AN-88MHZ reference circuit includes a complete gate bias network with a 5 kΩ multi-turn potentiometer (R4), 10 kΩ resistors (R2/R3), and LP2951ACDMR2G 5 V regulator (U1), enabling precise adjustment of IDQ to 100 mA without external bias supplies.

Can the MRF101AN-88MHZ be used outside the 87.5–108 MHz band?

No - the MRF101AN-88MHZ is a frequency-specific reference design optimized for 87.5–108 MHz. While the underlying MRF101AN transistor operates from 1.8–250 MHz, this particular reference circuit's matching network, layout, and component values are validated only within the specified band.

What thermal management is required for reliable 115 W CW operation of the MRF101AN-88MHZ?

For 115 W CW operation, the MRF101AN-88MHZ requires a heatsink with ≤1.5 °C/W total thermal resistance (junction-to-ambient), given its 1.1 °C/W junction-to-case rating and 76.8% drain efficiency. Mounting must ensure low-thermal-resistance contact between the TO-220-3L tab and heatsink surface.

Is the MRF101AN-88MHZ RoHS-compliant and lead-free?

Yes, the MRF101AN-88MHZ reference circuit uses RoHS-compliant components and lead-free assembly per NXP's standard manufacturing process. The MRF101AN die itself is qualified to JEDEC J-STD-020 moisture sensitivity level 3 and meets IPC/JEDEC J-STD-033 handling requirements.