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NXP Semiconductors MRF13750H-1300
- Part No.:
- MRF13750H-1300
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF13750H-1300.pdf
- Description:
- MRF13750H REF BRD 1300MHZ 700W
- Quantity:
- Payment:
- Shipping:
Inventory:4,479
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Product details
Overview
MRF13750H-1300 from NXP Semiconductors is a 750 W CW, 50 V, N-channel enhancement-mode LDMOS RF power transistor designed for industrial, scientific, and medical (ISM) applications in the 700–1300 MHz band. It delivers 700 W output at 1300 MHz CW with 17.2 dB power gain and 56.0% drain efficiency, operates up to +225 °C junction temperature, and features integrated ESD protection per JESD22-A114 Class 2 (2500 V HBM).
For engineers reviewing the MRF13750H-1300 datasheet, MRF13750H-1300 pinout, MRF13750H-1300 application, or MRF13750H-1300 equivalent, key selection criteria include ruggedness under >10:1 VSWR load mismatch at 915 MHz pulse, thermal resistance of 0.15 °C/W (CW), and compatibility with narrowband reference circuits for 1300 MHz particle accelerator systems.
Technical Context
The MRF13750H-1300 is a dual-gate, dual-drain lateral MOSFET with internally pre-matched input impedance optimized for 50 Ω systems. Its symmetrical structure supports both single-ended and push-pull configurations, with gate threshold voltage specified at 1.3–2.3 Vdc and quiescent gate voltage range of 1.7–2.7 Vdc at IDQ(A+B) = 200 mA.
Thermally, it uses an NI-1230H-4S air-cavity package with source-connected backside metal, enabling direct heatsink mounting. The device is characterized across 30–50 V operating voltage and validated for linear operation with appropriate biasing, supporting both continuous wave and pulsed RF power delivery in ISM bands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 700–1300 MHz - Validated performance at 915 MHz (750 W CW) and 1300 MHz (700 W CW) |
| Output Power (CW) | 700 W @ 1300 MHz - Sustained RF output under 50 Vdc, IDQ(A+B) = 150 mA, narrowband reference circuit |
| Power Gain | 17.2 dB @ 1300 MHz - Enables compact driver stage design with MRFE6VS25GN (25 W) recommended driver |
| Drain Efficiency | 56.0% @ 1300 MHz - Reduces thermal load vs. lower-efficiency alternatives; requires active heatsinking |
| Junction Temp. Max | +225 °C - Supports high-reliability operation in sealed industrial enclosures with limited airflow |
| Thermal Resistance | 0.15 °C/W (Junction-to-Case, CW) - Dictates minimum heatsink thermal resistance for safe 700 W operation |
| VSWR Ruggedness | >10:1 @ 915 MHz pulse - Survives severe load mismatches without degradation; critical for plasma and heating systems |
Pinout & Package
The MRF13750H-1300 is housed in the NI-1230H-4S air-cavity ceramic/metal package (28.45 mm × 28.45 mm × 4.06 mm), with electrically isolated case and source terminal connected to the backside metal. Mounting requires solder reflow per AN1908 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate A | Control electrode for first transistor half | Accepts DC bias and RF drive; internally pre-matched for 50 Ω input impedance |
| 2: Gate B | Control electrode for second transistor half | Enables balanced push-pull operation; matched to Gate A for phase coherence |
| 3: Drain A | High-power RF output node (half) | Carries up to 26.2 A peak current; requires low-inductance RF output network |
| 4: Drain B | High-power RF output node (half) | Paired with Drain A for differential or parallel output configuration |
| Backside | Source terminal (common) | Electrically tied to system ground/heat sink; must be thermally and electrically bonded |
Key Features
| Feature | Design Value |
|---|---|
| Internally input pre-matched | Reduces external matching complexity; enables rapid integration into 50 Ω systems without tuning |
| Dual-gate/dual-drain architecture | Supports flexible topologies - single-ended, push-pull, or paralleled operation for scalable power |
| ESD protection | HBM Class 2 (2500 V) and CDM Class C3 (1200 V) - lowers handling risk during assembly and test |
| Ruggedness under mismatch | No degradation at >10:1 VSWR with 3 dB overdrive - essential for unstable plasma and induction loads |
| 15-year longevity program | Guaranteed supply continuity for long-lifecycle industrial equipment and accelerator infrastructure |
Applications
| 915 MHz Industrial Heating | 1300 MHz Particle Accelerators |
|---|---|
Use Scenario: RF energy delivery to plasma chambers or induction coils in industrial welding, drying, and food processing systems. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 750 W CW at 915 MHz with high thermal stability. Use Value: High drain efficiency (67.1%) minimizes cooling requirements in enclosed cabinet environments. | Use Scenario: High-stability RF amplification in klystron driver stages or solid-state linac modules. IC Role / Device Role / Timing Role: High-power, narrowband CW amplifier operating at 1300 MHz with precise gain flatness. Use Value: Verified 17.2 dB gain and 56.0% efficiency at 1300 MHz enable predictable beam control in accelerator cavities. |
| ISM Band RF Generators | Medical Diathermy Systems |
Use Scenario: Modular RF generator platforms requiring field-replaceable, high-power transistors across 700–1300 MHz. IC Role / Device Role / Timing Role: Scalable power device supporting both 915 MHz and 1300 MHz ISM allocations via reference circuit variants. Use Value: Dual-frequency validation (Tables 7 & 9) eliminates need for separate SKUs per band. | Use Scenario: Compact, air-cooled RF sources for therapeutic deep-tissue heating in portable diathermy units. IC Role / Device Role / Timing Role: High-ruggedness final amplifier tolerant of variable tissue coupling and cable VSWR shifts. Use Value: >10:1 load mismatch survival ensures uninterrupted treatment even with patient movement or probe misalignment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF13750HS | Same die, NI-1230S-4S package - improved thermal impedance (ZθJC = 0.014 °C/W pulse) due to enhanced substrate metallization | Better suited for high-duty-cycle pulsed systems where transient thermal response dominates | Select MRF13750HS when pulse width exceeds 100 µs or duty cycle >10% in production fixtures |
| MRFE6VP61K25H | 600 W, 1360 MHz max, higher gain (18.5 dB @ 1300 MHz), but lower ruggedness (VSWR 6.5:1 rated) | Targeted at telecom base station repeaters, not ISM industrial loads | Choose MRFE6VP61K25H only if gain priority outweighs load mismatch tolerance and longevity assurance |
Compared with MRF13750H-1300, the MRF13750HS offers superior transient thermal response for demanding pulse profiles, while MRFE6VP61K25H trades ruggedness for higher gain in narrower telecom bands - neither is pin-compatible, and layout adaptation is required for either alternative.
Availability
MRF13750H-1300 is available at Aetrix Electronics and suitable for industrial heating systems, particle accelerator RF drivers, and medical diathermy equipment requiring stable component supply over extended production lifecycles.
Supply support for MRF13750H-1300 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in RF power technology.
The MRF13750H-1300 belongs to NXP's high-power LDMOS transistor family engineered specifically for rugged, high-efficiency RF amplification in industrial, scientific, and medical ISM bands - emphasizing thermal reliability, load mismatch tolerance, and 15-year product longevity.
FAQ
What is the maximum continuous drain current rating for the MRF13750H-1300?
The MRF13750H-1300 does not specify a standalone continuous drain current rating. Instead, its safe operating area is defined by total device dissipation (1333 W @ TC = 25 °C, derated 6.67 W/°C above), junction temperature limit (+225 °C), and measured performance at IDQ(A+B) = 150–200 mA. Peak drain current reaches 26.2 A under 915 MHz CW conditions per Figure 4.
Does the MRF13750H-1300 require external input matching networks?
No - the MRF13750H-1300 is internally input pre-matched for 50 Ω systems, as confirmed in the Features section and Table 8/10 reference circuit layouts. External matching is still required on the output side to transform 50 Ω to the optimal load impedance (e.g., 0.39 + j0.92 Ω at 1300 MHz per Figure 12).
Can the MRF13750H-1300 be operated at voltages below 50 Vdc?
Yes - the MRF13750H-1300 is characterized for 30–50 V operation (Features section) and maintains functionality down to 30 Vdc. However, output power, gain, and efficiency decrease significantly below 45 Vdc; Table 4 and Figure 18 show Gps dropping from 20.5 dB at 50 V to ~17 dB at 30 V at 915 MHz.
What thermal interface material is recommended for mounting the MRF13750H-1300?
NXP recommends solder reflow attachment per Application Note AN1908 for the NI-1230H-4S package. Conductive epoxies or thermal greases are not advised - the backside source metallization is designed for direct solder bonding to copper or aluminum heatsinks to achieve the specified 0.15 °C/W RθJC.
Is the MRF13750H-1300 suitable for Class AB linear amplifier designs?
Yes - the MRF13750H-1300 is explicitly stated as "suitable for linear applications with appropriate biasing" (Features section). Its gate threshold voltage (1.3–2.3 Vdc) and quiescent gate voltage range (1.7–2.7 Vdc) support stable Class AB operation, and narrowband reference circuits in Tables 7 and 9 validate linearity via P1dB/P3dB metrics.
MRF13750H-1300 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 1.3GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRF13750H
MRF13750H-1300 FAQ
1.How can I place an order for MRF13750H-1300 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF13750H-1300 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF13750H-1300 reliable?
The price and inventory of MRF13750H-1300 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF13750H-1300 is usually 5 days.
3.What payment methods are accepted for MRF13750H-1300?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF13750H-1300 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF13750H-1300?
MRF13750H-1300 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF13750H-1300 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF13750H-1300?
For technical support, including MRF13750H-1300 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF13750H-1300 requirements.
6.How does Aetrix verify that MRF13750H-1300 is sourced from the original manufacturer or authorized distributors?
All MRF13750H-1300 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF13750H-1300 meets industry standards.
7.What is the process for return or replacement of MRF13750H-1300?
All MRF13750H-1300 units undergo pre-shipment inspection (PSI). If there is an issue with MRF13750H-1300, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF13750H-1300 part is unused and in its original packaging.
Return procedure for MRF13750H-1300:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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