NXP Semiconductors MRF13750HR5

Overview

MRF13750HR5 from NXP Semiconductors is a 750 W CW, 50 V N-channel enhancement-mode LDMOS RF power transistor designed for industrial, scientific, and medical (ISM) applications in the 700–1300 MHz band. It delivers 750 W output at 915 MHz CW with 19.3 dB power gain and 67.1% drain efficiency, operates up to +225 °C junction temperature, and features integrated ESD protection per JESD22-A114 Class 2 (2500 V HBM).

For engineers reviewing the MRF13750HR5 datasheet, MRF13750HR5 pinout, MRF13750HR5 application, or MRF13750HR5 equivalent, key selection criteria include ruggedness under >10:1 VSWR load mismatch at 915 MHz pulse, thermal resistance of 0.15 °C/W (CW), dual-gate/dual-drain architecture for push-pull use, and compatibility with 50 V DC supply and narrowband matching networks.

Technical Context

This device is a laterally diffused MOSFET optimized for high-power RF amplification in fixed-frequency ISM systems. Its internal input pre-matching simplifies integration into 50 Ω systems, and it supports both single-ended and push-pull configurations using independent Gate A/Gate B and Drain A/Drain B terminals.

The transistor is characterized across 30–50 V operating range, with gate threshold voltage of 1.3–2.3 Vdc and quiescent gate voltage of 1.7–2.7 Vdc at IDQ(A+B) = 200 mA. It exhibits Crss = 1.94 pF and Coss = 63.8 pF at VDS = 50 Vdc, enabling stable narrowband operation at 915 MHz and 1300 MHz reference circuits.

Key Specifications

Pinout & Package

Package: NI-1230H-4S - Ceramic/metal air-cavity package with electrically isolated baseplate (source terminal), rated for high-power RF operation and reflow-solder attach per AN1908.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF13750HR5, CGHV1F00750F offers higher frequency capability and efficiency but demands stricter gate control, while MRF10350HR5 provides pin-compatible downrating for thermal or cost optimization-neither is pin-to-pin or drop-in replaceable without circuit validation.

Availability

MRF13750HR5 is available at Aetrix Electronics and suitable for industrial heating systems, particle accelerator RF drivers, and plasma generator amplifiers requiring stable component supply, long-term lifecycle assurance, and high-ruggedness RF power devices.

Supply support for MRF13750HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, automotive radar, and high-performance RF power devices for industrial and communications infrastructure.

The MRF13750HR5 belongs to NXP's RF Power LDMOS transistor family, engineered specifically for high-efficiency, high-ruggedness amplification in fixed-frequency ISM applications from 700–1300 MHz.

FAQ

What is the maximum continuous drain current rating for the MRF13750HR5?

The MRF13750HR5 does not specify a maximum continuous drain current (ID) as a standalone parameter. Instead, its safe operating area is defined by maximum ratings: VDSS = +105 Vdc, PD = 1333 W at TC = 25 °C (derated 6.67 W/°C above), and TJ ≤ +225 °C. Typical CW operation at 750 W output yields ID(A+B) ≈ 26.2 A at 50 Vdc, confirmed in Figure 4 MTTF curves and Table 1 derating data. Always validate current under actual thermal conditions using RθJC = 0.15 °C/W.

Can the MRF13750HR5 be operated in pulsed mode, and what are the validated pulse specifications?

Yes, the MRF13750HR5 is fully characterized for pulsed operation. Per Table 5 and Figure 15–17, it delivers 850 W peak output at 915 MHz with 100 µs pulse width and 10% duty cycle, achieving 20.5 dB power gain and 69.2% drain efficiency. Load mismatch testing confirms no degradation at >10:1 VSWR under these conditions. Pulse operation requires stable 50 Vdc rail with low-impedance decoupling and gate bias set to VGS(Q) = 1.7–2.7 Vdc for IDQ(A+B) = 200 mA.

What is the recommended gate driver for the MRF13750HR5, and why?

NXP explicitly recommends the MRFE6VS25GN (25 W RF driver) for the MRF13750HR5, as stated in the Features section. This recommendation is based on verified impedance matching, sufficient peak current delivery (>1 A), and compatible gate charge profile to achieve the specified 19.3–20.5 dB gain and fast turn-on/turn-off in narrowband 915 MHz circuits. Using a lower-power driver risks gain compression or thermal instability under full 750 W CW load.

Does the MRF13750HR5 require external ESD protection in the final PCB layout?

No, the MRF13750HR5 includes integrated ESD protection rated to JESD22-A114 Class 2 (2500 V HBM) and JESD22-C101 Class C3 (1200 V CDM), as confirmed in Table 3. External ESD diodes or TVS devices are unnecessary for handling or board-level protection under normal manufacturing and operational conditions. However, standard RF layout best practices-such as controlled-impedance gate traces and minimized parasitic inductance-remain essential for stability and performance.

How does the MRF13750HR5's thermal performance compare between CW and pulsed operation?

The MRF13750HR5 has two distinct thermal metrics: RθJC = 0.15 °C/W for CW operation (measured at 700 W, TC = 82 °C), and ZθJC = 0.014 °C/W for pulsed operation (850 W peak, 100 µs/10%, TC = 76 °C). The lower thermal impedance in pulse mode reflects transient heat diffusion into the package mass, enabling higher instantaneous power without exceeding TJ = +225 °C. For thermal design, use RθJC for steady-state sizing and ZθJC for short-duration pulse reliability analysis.