NXP Semiconductors MRF13750HSR5

Overview

MRF13750HSR5 from NXP Semiconductors is a 750 W CW, 50 V RF power LDMOS transistor designed for industrial heating and scientific applications in the 700–1300 MHz band. It delivers 750 W output at 915 MHz CW (19.3 dB gain, 67.1% drain efficiency), supports pulse operation up to 850 W peak, and features integrated ESD protection with rugged >10:1 VSWR tolerance under overdrive.

For engineers reviewing the MRF13750HSR5 datasheet, MRF13750HSR5 pinout, MRF13750HSR5 application, or MRF13750HSR5 equivalent, key selection criteria include its dual-gate balanced architecture, NI-1230S-4S air-cavity package thermal performance (0.15 °C/W R_θJC), 225 °C max junction temperature, and suitability for single-ended or push-pull RF amplifier stages in ISM systems.

Technical Context

This N-channel enhancement-mode lateral MOSFET operates with V_DD = 50 Vdc and quiescent current IDQ(A+B) = 150–200 mA. Its internally pre-matched input simplifies narrowband design at 915 MHz and 1300 MHz, while the dual-drain/dual-gate structure enables balanced push-pull configurations without external combining networks.

The device is characterized across 30–50 V operating range and validated for ruggedness under 10% duty cycle pulse stress (100 µs, 50 V, >10:1 VSWR). Thermal design relies on case-mounted heatsinking, with source connected to package backside and R_θJC = 0.15 °C/W for CW operation.

Key Specifications

Pinout & Package

Package: NI-1230S-4S - Air-cavity ceramic/metal flanged package with electrically isolated source (backside metal tab), optimized for high-power RF thermal management and RF grounding via case mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF13750HSR5, CGHV1F007D offers superior gain and thermal performance but demands stricter gate bias control and load stability, while MRF10340HSR5 provides a drop-in lower-power alternative in identical packaging with relaxed voltage requirements.

Availability

MRF13750HSR5 is available at Aetrix Electronics and suitable for industrial heating systems, scientific instrumentation, RF plasma generators, and high-power test equipment requiring stable component supply across multi-year production cycles.

Supply support for MRF13750HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in RF power technologies.

The MRF13750HSR5 belongs to NXP's high-power LDMOS transistor family engineered specifically for rugged, high-efficiency RF amplification in industrial, scientific, and medical (ISM) systems operating from 700–1300 MHz.

FAQ

What is the maximum continuous drain current rating for the MRF13750HSR5?

The MRF13750HSR5 does not specify a maximum continuous drain current (I_D) as a standalone parameter. Instead, it is rated for 750 W CW output at 915 MHz with V_DD = 50 Vdc and IDQ(A+B) = 150 mA. Under these conditions, peak drain current exceeds 26 A. The safe operating area is defined by thermal limits (T_J ≤ 225 °C) and voltage constraints (V_DSS ≤ 105 V), not a fixed I_D limit. Designers must verify current waveforms against SOA curves in the MRF13750HSR5 datasheet.

Can the MRF13750HSR5 be operated in Class AB mode for linear amplification?

Yes, the MRF13750HSR5 is explicitly characterized for linear applications with appropriate biasing. Its gate threshold voltage (V_GS(th) = 1.3–2.3 V) and quiescent gate voltage range (V_GS(Q) = 1.7–2.7 V at IDQ = 200 mA) support stable Class AB operation. NXP provides reference circuit data at 915 MHz and 1300 MHz showing harmonic suppression and gain flatness suitable for AM/SSB modulation schemes when paired with proper driver stages like the MRFE6VS25GN.

What is the recommended gate drive power for the MRF13750HSR5 in a 915 MHz CW application?

For 915 MHz CW operation delivering 750 W output, the MRF13750HSR5 requires approximately 8.8 W input drive power, as verified in the NXP narrowband reference circuit (Table 7). This corresponds to +39.4 dBm. NXP recommends the MRFE6VS25GN (25 W driver) to ensure sufficient headroom and stability margin, especially under VSWR stress or temperature variation. Drive impedance should match the device's Z_source = 0.58 + j0.24 Ω (915 MHz) per side.

How does the NI-1230S-4S package of the MRF13750HSR5 differ from the NI-1230H-4S variant?

The MRF13750HSR5 uses the NI-1230S-4S package, which features a solderable baseplate and optimized internal leadframe for enhanced thermal conduction compared to the NI-1230H-4S. Both share identical outline and pinout, but the 'S' suffix denotes improved thermal resistance (R_θJC = 0.15 °C/W vs. 0.16 °C/W for 'H') and tighter mechanical tolerances for high-reliability mounting. The MRF13750HSR5 is the preferred version for new designs requiring maximum thermal margin.

Is the MRF13750HSR5 suitable for pulsed RF applications beyond the documented 100 µs / 10% duty cycle?

The MRF13750HSR5 is characterized for pulse operation at 100 µs pulse width and 10% duty cycle (850 W peak, 69.2% efficiency at 915 MHz). While its ruggedness testing confirms survival at >10:1 VSWR under those conditions, operation outside this envelope requires derating. For longer pulses or higher duty cycles, thermal limits dominate - junction temperature must remain ≤225 °C. Pulse performance must be validated per AN1955 thermal measurement guidelines, and peak current must stay within SOA boundaries shown in the MRF13750HSR5 datasheet.