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NXP Semiconductors MRF1535FNT1
- Part No.:
- MRF1535FNT1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-272BA
- Datasheet:
-
MRF1535FNT1.pdf
- Description:
- RF MOSFET LDMOS 12.5V TO272-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,841
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Product details
Overview
MRF1535FNT1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband common-source amplifier applications in 12.5 V mobile FM equipment. It delivers 35 W output power at 520 MHz, achieves 13.5 dB power gain and 55% drain efficiency under specified conditions, and operates with 500 mA quiescent drain current.
For engineers reviewing the MRF1535FNT1 datasheet, MRF1535FNT1 pinout, MRF1535FNT1 application, or MRF1535FNT1 equivalent, this device is selected for VHF/UHF high-power amplifier stages requiring stable thermal performance, 20:1 VSWR ruggedness, and RoHS-compliant plastic packaging in TO-272-6 configuration.
Technical Context
This lateral MOSFET operates in enhancement mode with gate threshold voltage between 1.0–2.6 Vdc and exhibits low RDS(on) ≤ 0.7 Ω at VGS = 5 Vdc and ID = 0.6 A. Its large-signal impedance characteristics are characterized across three broadband segments: 135–175 MHz, 400–470 MHz, and 450–520 MHz.
The device features a thermally robust plastic package rated to 200°C junction temperature, with 0.90°C/W junction-to-case thermal resistance and JEDEC MSL Level 3 moisture sensitivity. It supports stable operation under 2 dB overdrive at 15.6 Vdc and 520 MHz with 20:1 VSWR capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 35 W at 520 MHz, 12.5 V - sufficient for Class AB mobile FM final-stage amplification |
| Power Gain | 13.5 dB at 520 MHz - enables single-stage high-gain RF amplification without cascading |
| Drain Efficiency | 55% at 520 MHz - reduces thermal load and DC power consumption in battery-sensitive systems |
| VSWR Tolerance | 20:1 at 15.6 Vdc, 520 MHz, 2 dB overdrive - ensures survivability in mismatched antenna environments |
| Junction Temp Limit | 200°C - allows high-power operation with appropriate heatsinking per RθJC = 0.90°C/W |
| Input Capacitance | 250 pF at 1 MHz - defines input matching network component sizing and bandwidth constraints |
| Thermal Resistance | 0.90°C/W junction-to-case - mandates minimum heatsink thermal resistance of ≤ 0.6°C/W for safe 135 W dissipation |
Pinout & Package
Package: TO-272-6 plastic surface-mount package (Case 1264A-03, Style 1), RoHS-compliant, tape-and-reel (500 units per 44 mm, 13-inch reel). Bolt-down mounting recommended per AN3263/AN3789.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (common reference) | Electrically connected to metal tab; must be bolted to heatsink for thermal and RF grounding |
| Pin 2 (Gate) | Control electrode | High-impedance input requiring stable bias network and ESD protection; VGS rating ±20 Vdc |
| Pin 3 (Drain) | Power output terminal | High-current RF output node; connects to output matching network and DC supply via RF choke |
| Pins 4–6 (Source) | Additional source connections | Parallel source paths to reduce inductance and improve thermal conduction to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Broadband full-power coverage | Three discrete bands: 135–175 MHz, 400–470 MHz, and 450–520 MHz - eliminates need for band-switching in multi-band radios |
| Thermal stability | 200°C-rated plastic package with 0.90°C/W RθJC - enables sustained high-power operation without thermal runaway |
| VSWR ruggedness | 20:1 tolerance at 520 MHz with 2 dB overdrive - protects against reflected power damage in mobile antenna environments |
| Large-signal impedance characterization | Zin and ZOL* provided per frequency band - accelerates first-pass matching network design without iterative simulation |
| Lead-free compliance | N-suffix RoHS-compliant terminations - meets global environmental regulations without performance trade-offs |
Applications
| Mobile FM Transmitter Final Stage | Land Mobile Radio Amplifier |
|---|---|
Use Scenario: 12.5 V battery-powered FM transmitter operating at 450–520 MHz in public safety radio systems. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 35 W POUT into 50 Ω load with 13.5 dB gain and 55% efficiency. Use Value: Enables compact, air-cooled transmitter design with proven 20:1 VSWR survivability during antenna detuning or fault conditions. |
Use Scenario: UHF repeater base station amplifier covering 400–470 MHz band with high linearity and thermal margin. IC Role / Device Role / Timing Role: Common-source Class AB power stage biased at 500 mA IDQ for optimal gain-efficiency balance. Use Value: Delivers consistent 35 W output across full 70 MHz bandwidth without retuning, reducing system calibration complexity. |
| VHF Airband Communication Amplifier | Amateur Radio HF/VHF Linear Amplifier |
Use Scenario: 135–175 MHz airborne transceiver amplifier requiring high reliability and thermal resilience. IC Role / Device Role / Timing Role: High-gain, high-efficiency RF power transistor operating at 12.5 V with 500 mA quiescent current. Use Value: Achieves 13.5 dB gain and 55% efficiency while maintaining 200°C junction rating - critical for sealed avionics enclosures. |
Use Scenario: Homebrew linear amplifier for amateur radio operators targeting 135–175 MHz and 450–520 MHz bands. IC Role / Device Role / Timing Role: Surface-mount RF power MOSFET with documented large-signal Zin/ZOL* data for rapid prototype matching. Use Value: Eliminates need for expensive wafer-level characterization; enables functional amplifier build using published microstrip layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1535NT1 | Same die, identical RF specs, but housed in Case 1264-10 (TO-272-6 WRAP) with different mechanical outline and bolt-hole positioning | Requires PCB footprint revision; not interchangeable without layout change | Select MRF1535FNT1 for new designs requiring Case 1264A-03 mechanical compatibility and MSL Level 3 handling |
| MRFE6VP6300H | Higher POUT (300 W), LDMOS architecture, 66 V operation, different bias requirements and thermal profile | Targeted at base station infrastructure, not mobile 12.5 V systems; requires redesign of DC feed and matching | Choose MRF1535FNT1 when 35 W at 12.5 V, TO-272-6 form factor, and VSWR ruggedness are primary requirements |
Compared with MRF1535NT1, the MRF1535FNT1 offers identical RF performance in a revised package with updated MSL rating and bolt-mount geometry; compared with MRFE6VP6300H, it provides lower-voltage, lower-power, drop-in compatibility for mobile FM platforms without infrastructure-grade complexity.
Availability
MRF1535FNT1 is available at Aetrix Electronics and suitable for mobile FM transmitters, land mobile radio amplifiers, VHF airband communication systems, and amateur radio linear amplifiers requiring stable component supply and long-term production continuity.
Supply support for MRF1535FNT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure and mobile communications.
The MRF1535FNT1 belongs to Freescale's lateral RF power MOSFET product line, engineered specifically for ruggedized VHF/UHF mobile amplifier applications where thermal stability, VSWR tolerance, and 12.5 V operation are essential.
FAQ
What is the maximum continuous drain current rating for the MRF1535FNT1?
The MRF1535FNT1 has a maximum continuous drain current (ID) rating of 6 A at TC = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25°C at 0.50 W/°C. The device is typically operated at 500 mA quiescent current (IDQ) for optimal RF performance in amplifier applications.
Does the MRF1535FNT1 require external gate protection?
Yes, the MRF1535FNT1 does not include internal gate zener protection. An external zener diode (e.g., 18 V) between gate and source is recommended to prevent gate oxide damage from transient overvoltage. Additionally, a low-impedance gate bias network helps dampen coupling from drain transients through Crss, as specified in Freescale Application Note AN211A.
What is the thermal resistance junction-to-case for the MRF1535FNT1?
The MRF1535FNT1 has a thermal resistance of RθJC = 0.90°C/W, measured from junction to case (metal tab). This value is critical for heatsink selection: to sustain 135 W total dissipation at TJ = 200°C with TC = 80°C, the heatsink must provide ≤ 0.6°C/W thermal resistance from case to ambient, per AN3263 mounting guidelines.
Can the MRF1535FNT1 be used in Class C amplifier configurations?
The MRF1535FNT1 is characterized and optimized for Class AB operation at IDQ = 500 mA, as validated in Freescale's test fixtures. While it can be biased into Class C, doing so voids guaranteed performance metrics (gain, efficiency, linearity) and risks instability due to its high small-signal gain. Freescale recommends adhering to documented Class AB conditions for reliable operation.
What are the moisture sensitivity and reflow requirements for the MRF1535FNT1?
The MRF1535FNT1 is rated MSL Level 3 per JESD22-A113/JEDEC J-STD-020, with a peak reflow temperature of 260°C. It must be stored dry and processed within 168 hours of exposure to ambient conditions after seal opening. Reflow profiles must follow AN1907 guidelines to avoid package cracking or delamination during solder attachment.
MRF1535FNT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-272BA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 520MHz
- Gain:
- 13.5dB
- Voltage - Test:
- 12.5 V
- Current Rating (Amps):
- 6A
- Noise Figure:
- -
- Current - Test:
- 500 mA
- Power - Output:
- 35W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-272-6
MRF1535FNT1 FAQ
1.How can I place an order for MRF1535FNT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1535FNT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1535FNT1 reliable?
The price and inventory of MRF1535FNT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1535FNT1 is usually 5 days.
3.What payment methods are accepted for MRF1535FNT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1535FNT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1535FNT1?
MRF1535FNT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1535FNT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1535FNT1?
For technical support, including MRF1535FNT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1535FNT1 requirements.
6.How does Aetrix verify that MRF1535FNT1 is sourced from the original manufacturer or authorized distributors?
All MRF1535FNT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1535FNT1 meets industry standards.
7.What is the process for return or replacement of MRF1535FNT1?
All MRF1535FNT1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1535FNT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1535FNT1 part is unused and in its original packaging.
Return procedure for MRF1535FNT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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