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NXP Semiconductors MRF1535NT1
- Part No.:
- MRF1535NT1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-272AA
- Datasheet:
-
MRF1535NT1.pdf
- Description:
- RF MOSFET LDMOS 12.5V TO272-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,688
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Product details
Overview
MRF1535NT1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband common-source amplifier applications in 12.5 V mobile FM equipment. It delivers 35 W output power at 520 MHz, achieves 13.5 dB power gain and 55% drain efficiency, and operates with 500 mA quiescent drain current under specified test conditions.
For engineers reviewing the MRF1535NT1 datasheet, MRF1535NT1 pinout, MRF1535NT1 application, or MRF1535NT1 equivalent, this device is selected for VHF/UHF high-power amplification where thermal stability, 20:1 VSWR ruggedness, and broadband performance across 135–175 MHz, 400–470 MHz, and 450–520 MHz bands are critical design requirements.
Technical Context
This device operates as a surface-mount, common-source RF power transistor with lateral MOSFET architecture optimized for high-gain, high-efficiency amplification in mobile radio infrastructure. Its design incorporates series-equivalent large-signal impedance characterization and supports stable operation up to 200°C junction temperature.
The MRF1535NT1 features a 0.90°C/W junction-to-case thermal resistance, RoHS-compliant lead-free terminations (N suffix), and is rated for 20:1 VSWR tolerance at 15.6 Vdc and 520 MHz with 2 dB overdrive - enabling robust operation under mismatched load conditions without damage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 35 W at 520 MHz, 12.5 V - sufficient for Class AB mobile FM transmitter final stages |
| Power Gain | 13.5 dB at 520 MHz - enables single-stage amplification with minimal driver stage complexity |
| Drain Efficiency | 55% at 520 MHz - reduces thermal load and power supply demand in battery-powered systems |
| Junction Temperature | 200°C maximum - supports high-reliability operation in thermally constrained enclosures |
| Thermal Resistance | 0.90°C/W (junction-to-case) - mandates direct metal heatsink contact for sustained full-power operation |
| VSWR Tolerance | 20:1 at 520 MHz, 15.6 Vdc, 2 dB overdrive - ensures survivability during antenna detuning or fault events |
| Input Capacitance | 250 pF at 1 MHz - defines input matching network component sizing and bandwidth constraints |
Pinout & Package
Package: TO-272-6 WRAP plastic case (Case 1264-10, Style 1), surface-mount with integral heatsink tab. Lead-free (RoHS-compliant) terminations per N suffix; supplied in tape-and-reel (T1 = 500 units per 44 mm, 13-inch reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-current RF power output path | Electrically connected to heatsink; requires low-impedance thermal interface and DC grounding via heatsink |
| Source (Pin 1) | Common reference node for gate drive and RF return | Low-inductance connection essential for stability; ties directly to ground plane in RF layout |
| Gate (Pin 2) | Control terminal for channel conduction | High-impedance capacitive node; requires ESD protection and controlled-impedance gate bias network |
| Source (Pin 3) | Secondary source connection | Redundant source bond for reduced package inductance; must be tied to same ground potential as Pin 1 |
| Drain (Pin 4) | Secondary drain connection | Supplements main tab for current sharing; electrically identical to drain tab |
| Source (Pin 5) | Third source connection | Ensures uniform current distribution across die; connects to ground plane with minimal trace length |
| Drain (Pin 6) | Third drain connection | Provides additional current-carrying capacity and thermal conduction path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Broadband full-power coverage | Simultaneous 35 W operation across three disjoint bands: 135–175 MHz, 400–470 MHz, and 450–520 MHz |
| Thermal stability | 200°C-rated plastic package with 0.90°C/W RθJC - enables operation in sealed, convection-limited enclosures |
| VSWR ruggedness | Guaranteed survival at 20:1 VSWR with 2 dB overdrive - eliminates need for external circulators in mobile base stations |
| Large-signal impedance data | Published Zin and ZOL* values per frequency band - accelerates first-pass matching network design without EM simulation |
| Lead-free compliance | N suffix confirms RoHS-compliant terminations and JESD22-A113 MSL Level 3 (260°C peak reflow) |
Applications
| Land Mobile Radio Transmitter | UHF Public Safety Repeater |
|---|---|
Use Scenario: Final RF power stage in 12.5 V vehicle-mounted FM transceivers operating at 150–174 MHz. IC Role / Device Role / Timing Role: Common-source power amplifier delivering 35 W PEP into 50 Ω load with 13.5 dB small-signal gain. Use Value: Eliminates need for cascaded amplifier stages; maintains linearity and spectral purity under varying supply voltage and temperature. |
Use Scenario: High-reliability output stage in fixed-site UHF repeaters covering 450–470 MHz public safety bands. IC Role / Device Role / Timing Role: Linear Class AB RF power transistor biased at 500 mA IDQ for continuous duty-cycle operation. Use Value: Withstands antenna VSWR excursions during lightning-induced faults while sustaining full rated output power. |
| VHF Base Station Exciter | Amateur Radio HF/VHF Amplifier |
Use Scenario: Driver or final stage in commercial VHF base station exciters requiring 135–175 MHz coverage. IC Role / Device Role / Timing Role: Broadband RF power MOSFET configured with published Zin/ZOL* matching networks for rapid prototyping. Use Value: Reduces development time by providing verified S-parameter data and scattering parameter tables up to 600 MHz. |
Use Scenario: Homebrew linear amplifier module for amateur operators targeting 450–520 MHz contest bands. IC Role / Device Role / Timing Role: Surface-mount RF power transistor mounted on copper-clad Teflon PCB with bolt-down heatsinking per AN3263. Use Value: Enables compact, air-cooled designs meeting FCC Part 97 emission limits without active cooling or complex bias circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1535FNT1 | Different package: Case 1264A-03 (TO-272-6) vs. MRF1535NT1's Case 1264-10; identical electrical specs and thermal rating | Same RF performance but distinct mechanical footprint and heatsink mounting geometry | Select MRF1535FNT1 only when legacy board layout uses TO-272-6 variant with different bolt-hole pattern or tab dimensions |
| MRFE6VP6300H | Higher Pout (300 W), LDMOS architecture, 66 V operation, 1.8–600 MHz range; not pin-compatible | Targets macro-cell base stations; requires redesigned matching, bias, and thermal management | Choose MRFE6VP6300H only for upgrade paths demanding >100 W output or extended frequency coverage beyond 520 MHz |
Compared with MRF1535FNT1, the MRF1535NT1 offers identical RF performance but requires attention to Case 1264-10 mechanical tolerances; versus MRFE6VP6300H, it provides lower-cost, drop-in replacement capability for 35 W mobile radio applications without redesigning power delivery or thermal subsystems.
Availability
MRF1535NT1 is available at Aetrix Electronics and suitable for land mobile radio transmitters, UHF public safety repeaters, VHF base station exciters, and amateur radio amplifier modules requiring stable component supply across industrial and communications OEM programs.
Supply support for MRF1535NT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure and industrial communications.
The MRF1535NT1 belongs to Freescale's lateral N-channel RF power MOSFET product line, engineered specifically for rugged, broadband mobile FM amplification in 12.5 V systems with emphasis on thermal resilience and VSWR tolerance.
FAQ
What is the maximum operating frequency of the MRF1535NT1?
The MRF1535NT1 is characterized and specified for full-power operation up to 520 MHz, with verified performance across three discrete bands: 135–175 MHz, 400–470 MHz, and 450–520 MHz. While S-parameters extend to 600 MHz, the 35 W output power rating and 55% efficiency are guaranteed only at 520 MHz under standard test conditions. Operation beyond 520 MHz requires validation of gain, efficiency, and stability in the target application circuit.
Does the MRF1535NT1 require external gate protection?
Yes, the MRF1535NT1 does not include monolithic gate zener protection. External gate protection - such as a 12 V zener diode from gate to source - is recommended to prevent oxide damage from transient overvoltage. Additionally, a low-value resistor (e.g., 10–100 Ω) in series with the gate helps dampen RF feedback and suppress parasitic oscillation, as confirmed in Freescale Application Note AN211A and the device's stability analysis guidelines.
What is the correct quiescent drain current (IDQ) for the MRF1535NT1?
The MRF1535NT1 was characterized and optimized at IDQ = 500 mA for 520 MHz operation with 12.5 V supply and 35 W output. This value is explicitly recommended in the datasheet for typical mobile FM amplifier applications. Lower IDQ settings (e.g., 250 mA) reduce power dissipation but sacrifice gain and efficiency; higher values increase thermal stress without proportional RF benefit and are not validated in the specification tables.
Can the MRF1535NT1 be used in Class C amplifier configurations?
No - the MRF1535NT1 is designed and characterized for Class AB operation. Its lateral MOSFET structure, thermal design, and published large-signal impedances assume linear conduction over a significant portion of the RF cycle. Class C operation would exceed safe operating area limits, induce excessive harmonic distortion, and risk thermal runaway due to insufficient conduction angle for effective heat spreading across the die.
Is the MRF1535NT1 compatible with lead-free reflow soldering processes?
Yes, the MRF1535NT1 carries MSL Level 3 per JESD22-A113 and is qualified for peak reflow temperatures up to 260°C, making it fully compatible with standard lead-free soldering profiles. The "N" suffix confirms RoHS-compliant, lead-free terminations. Proper moisture preconditioning per IPC/JEDEC J-STD-020 is required prior to reflow to prevent popcorn cracking in the over-molded plastic package.
MRF1535NT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-272AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 520MHz
- Gain:
- 13.5dB
- Voltage - Test:
- 12.5 V
- Current Rating (Amps):
- 6A
- Noise Figure:
- -
- Current - Test:
- 500 mA
- Power - Output:
- 35W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-272-6
MRF1535NT1 FAQ
1.How can I place an order for MRF1535NT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1535NT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1535NT1 reliable?
The price and inventory of MRF1535NT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1535NT1 is usually 5 days.
3.What payment methods are accepted for MRF1535NT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1535NT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1535NT1?
MRF1535NT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1535NT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1535NT1?
For technical support, including MRF1535NT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1535NT1 requirements.
6.How does Aetrix verify that MRF1535NT1 is sourced from the original manufacturer or authorized distributors?
All MRF1535NT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1535NT1 meets industry standards.
7.What is the process for return or replacement of MRF1535NT1?
All MRF1535NT1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1535NT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1535NT1 part is unused and in its original packaging.
Return procedure for MRF1535NT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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