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NXP Semiconductors MRF1570NT1

Part No.:
MRF1570NT1
Manufacturer:
NXP Semiconductors
Category:
Single FETs, MOSFETs
Package:
TO-272-8
Datasheet:
AetrixMRF1570NT1.pdf
Description:
RF MOSFET LDMOS 12.5V TO272-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,432

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Product details

Overview

MRF1570NT1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband common-source amplifier applications in 12.5 V mobile FM equipment. It delivers 70 W output power at 470 MHz, achieves 11.5 dB power gain and 60% drain efficiency under specified conditions, and operates with 800 mA quiescent drain current - enabling high-power VHF/UHF amplification in land-mobile radio transmitters.

For engineers reviewing the MRF1570NT1 datasheet, MRF1570NT1 pinout, MRF1570NT1 application, or MRF1570NT1 equivalent, this page provides verified technical context, thermal and RF specifications, package details, real-world use cases in mobile radio systems, and validated alternative parts for design continuity and sourcing flexibility.

Technical Context

This device operates as a common-source RF power amplifier with lateral MOSFET architecture optimized for VHF–UHF frequencies (135–520 MHz). Its design incorporates series-equivalent large-signal impedance characterization (e.g., Zin = 0.82 − j0.79 Ω at 470 MHz) and supports stable operation under 20:1 VSWR at 15.6 Vdc with 2 dB overdrive.

Thermal management is critical: it features a 0.29 °C/W junction-to-case thermal resistance and is rated for 200 °C maximum junction temperature. The TO-272-8 plastic package (Case 1366-05) includes lead-free terminations (N suffix), RoHS compliance, and tape-and-reel packaging (T1 = 500 units per 44 mm, 13-inch reel).

Key Specifications

Parameter Value and Actual Design Meaning
Output Power 70 W at 470 MHz, 12.5 Vdc, 800 mA IDQ - enables full-power transmission in commercial FM base/mobile radios
Power Gain 11.5 dB at 470 MHz - reduces need for driver-stage amplification in multi-stage transmitter designs
Drain Efficiency 60% at 470 MHz - lowers thermal load and DC power consumption in battery- or vehicle-powered systems
VSWR Tolerance 20:1 at 15.6 Vdc, 470 MHz, 2 dB overdrive - ensures ruggedness against antenna mismatch in field-deployed radios
Junction Temp. Max 200 °C - supports high-reliability operation in sealed enclosures without active cooling
Thermal Resistance 0.29 °C/W (RθJC) - mandates direct metal-to-heatsink mounting for sustained 70 W output
Input Capacitance 500 pF (Ciss, 1 MHz) - defines input matching network complexity and bandwidth trade-offs

Pinout & Package

Package: TO-272-8 WRAP plastic (Case 1366-05, Style 1), surface-mount, lead-free (RoHS compliant), 200 °C capable. Mounting requires bolt-down or clamping per AN3263/AN3789 for thermal reliability.

Pin/Terminal Circuit Role Design Meaning
Drain (Pins 1–4, 7–8) High-current RF power output path Multi-pin parallel connection reduces inductance and thermal resistance; must be soldered to heatsink via exposed metal tab
Source (Pins 5–6) RF ground reference and current return Low-inductance source connection essential for stability; pins tied directly to ground plane
Gate (Pin 9) RF input control terminal Single-point gate connection minimizes parasitic coupling; requires external zener protection per AN211A

Key Features

Feature Design Value
Broadband full-power operation Delivers 70 W across three bands: 135–175 MHz, 400–470 MHz, and 450–520 MHz - eliminates band-specific PA redesigns
Thermal stability Positive temperature coefficient of VDS(on) prevents thermal runaway during extended transmit duty cycles
ESD robustness HBM Class 1, MM Class M2, CDM Class C2 - withstands handling in automated SMT lines without special precautions
Large-signal impedance data Published Zin and ZOL* values (e.g., 0.62 − j1.12 Ω at 470 MHz) enable first-pass matching network design per AN721
Moisture sensitivity MSL Level 3 (260 °C peak reflow) - compatible with standard Pb-free reflow profiles per J-STD-020

Applications

Land-Mobile Radio Transmitter Public Safety Base Station Amplifier

Use Scenario: High-duty-cycle FM voice transmission in vehicular-mounted radios operating at 450–470 MHz.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier in common-source configuration, driven by low-power driver stage.

Use Value: 70 W output enables 15+ km line-of-sight range; 60% efficiency extends vehicle battery life during prolonged operation.

Use Scenario: Fixed-site repeater system requiring reliable 135–175 MHz amplification for emergency response networks.

IC Role / Device Role / Timing Role: Linear Class AB RF power transistor delivering full-rated power across entire VHF band.

Use Value: Broadband performance eliminates band-switching hardware; 20:1 VSWR tolerance maintains operation during antenna icing or damage.

Commercial Two-Way Radio Industrial UHF Data Link Amplifier

Use Scenario: Compact portable radio supporting analog FM and narrowband digital modes at 400–470 MHz.

IC Role / Device Role / Timing Role: Output stage amplifier biased at 800 mA IDQ for optimal linearity and efficiency trade-off.

Use Value: 11.5 dB gain reduces driver stage complexity; TO-272-8 package enables high-density PCB layout with integrated heatsinking.

Use Scenario: Remote telemetry system transmitting sensor data over 450–520 MHz industrial ISM band.

IC Role / Device Role / Timing Role: Constant-envelope RF power amplifier in Class C configuration for high-efficiency digital modulation.

Use Value: 200 °C junction rating allows operation in unventilated outdoor enclosures; RoHS-compliant terminations meet global regulatory requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
MRF1570FNT1 Same die, identical RF specs, but housed in Case 1366A-03 (TO-272-8) - differs in mechanical outline and mounting hole pattern Requires PCB footprint revision; same thermal and electrical performance Select when legacy board uses 1366A-03 mounting geometry or existing inventory is FNT1 variant
MRFE6VP61K25H LDMOS-based, 1.25 kW P1dB, 600–1200 MHz - higher power, wider frequency range, different biasing and thermal interface Not drop-in; requires complete circuit redesign including matching, bias, and heatsink Choose only for new high-power infrastructure designs needing >1 kW output above 600 MHz

Compared with MRF1570FNT1, the MRF1570NT1 offers identical RF performance but requires verification of mechanical fit due to Case 1366-05 vs. 1366A-03 differences; MRFE6VP61K25H serves entirely different power/frequency tiers and cannot substitute without system-level redesign.

Availability

MRF1570NT1 is available at Aetrix Electronics and suitable for land-mobile radio transmitters, public safety base stations, commercial two-way radios, and industrial UHF data links requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for MRF1570NT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) specialized in high-performance RF power solutions for wireless infrastructure and mobile communications before its 2015 acquisition.

The MRF1570NT1 belongs to Freescale's lateral MOSFET product line, engineered specifically for rugged, high-efficiency VHF/UHF amplifier applications in mobile and portable radio equipment where thermal stability and broadband operation are critical.

FAQ

What is the maximum operating frequency range for the MRF1570NT1?

The MRF1570NT1 is characterized for full-power operation across three distinct bands: 135–175 MHz, 400–470 MHz, and 450–520 MHz. While usable beyond these ranges, Freescale specifies guaranteed 70 W output, 11.5 dB gain, and 60% efficiency only within these bands at 12.5 Vdc and 800 mA IDQ. Performance degrades outside these intervals per Figures 3–30.

Does the MRF1570NT1 require external gate protection?

Yes, the MRF1570NT1 lacks internal gate zener diodes. Freescale explicitly recommends adding an external zener diode (e.g., 12–15 V) between gate and source to prevent oxide damage from transients coupled via Crss. This is detailed in Application Note AN211A and the "Gate Protection" section of the datasheet.

What thermal mounting method is required for reliable operation of the MRF1570NT1?

The MRF1570NT1 must be mounted using bolt-down or clamping per AN3263 and AN3789, not standard reflow soldering alone. Its TO-272-8 package relies on mechanical pressure to ensure low thermal resistance (0.29 °C/W) between the exposed drain tab and heatsink. Failure to apply proper mounting force risks thermal runaway at full 70 W output.

Can the MRF1570NT1 be used in Class C amplifier configurations?

Yes - the MRF1570NT1 supports Class C operation for constant-envelope modulation schemes. Its lateral MOSFET structure provides high gain and thermal stability even under high-efficiency, nonlinear biasing. However, Freescale characterizes key specs (gain, efficiency, power) at Class AB (IDQ = 800 mA); Class C designs require custom load-pull optimization per AN721.

Is the MRF1570NT1 pin-compatible with the MRF1570FNT1?

No - although both share identical electrical specifications and TO-272-8 pin count, the MRF1570NT1 uses Case 1366-05 while the MRF1570FNT1 uses Case 1366A-03. These differ in mechanical outline, mounting hole positions, and flange dimensions. PCB layout and heatsink interface must be redesigned when substituting between them.

MRF1570NT1 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-272-8
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
470MHz
Gain:
11.5dB
Voltage - Test:
12.5 V
Current Rating (Amps):
-
Noise Figure:
-
Current - Test:
800 mA
Power - Output:
70W
Voltage - Rated:
40 V
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
TO-272-8 Wrap

MRF1570NT1 FAQ

1.How can I place an order for MRF1570NT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF1570NT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF1570NT1 reliable?

The price and inventory of MRF1570NT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1570NT1 is usually 5 days.

3.What payment methods are accepted for MRF1570NT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1570NT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF1570NT1?

MRF1570NT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF1570NT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF1570NT1?

For technical support, including MRF1570NT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1570NT1 requirements.

6.How does Aetrix verify that MRF1570NT1 is sourced from the original manufacturer or authorized distributors?

All MRF1570NT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1570NT1 meets industry standards.

7.What is the process for return or replacement of MRF1570NT1?

All MRF1570NT1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1570NT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF1570NT1 part is unused and in its original packaging.

Return procedure for MRF1570NT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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