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NXP Semiconductors MRF18060ALR5
- Part No.:
- MRF18060ALR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-957A
- Datasheet:
-
MRF18060ALR5.pdf
- Description:
- RF MOSFET LDMOS 26V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:3,207
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Product details
Overview
MRF18060ALR5 from NXP Semiconductors (formerly Freescale) is an internally matched N-channel enhancement-mode lateral RF power MOSFET designed for GSM 1805–1880 MHz base station amplifiers operating at 26 Vdc with 60 W CW output. It delivers 13 dB power gain, 45% drain efficiency, and withstands 10:1 VSWR under full-load conditions. Used in Class AB multicarrier and TDMA/CDMA macrocell power stages.
For engineers reviewing the MRF18060ALR5 datasheet, MRF18060ALR5 pinout, MRF18060ALR5 application, or MRF18060ALR5 equivalent, key selection criteria include its 1805–1880 MHz frequency coverage, 60 W CW output capability, thermal resistance of 0.97 °C/W, RoHS-compliant NI-780 package, and integrated ESD protection rated to Class 2 HBM.
Technical Context
This device employs a lateral MOSFET structure optimized for high linearity and phase flatness across the GSM1800 band. Its internal input/output matching network eliminates external tuning components for standard 50 Ω systems, reducing board space and design complexity in PCN/PCS/WLL infrastructure.
Thermally, it features a low RθJC of 0.97 °C/W and a maximum junction temperature of 200 °C, enabling stable operation in forced-air-cooled macrocell PA modules. Gate threshold voltage (2–4 Vdc) and quiescent gate voltage (2.5–4.5 Vdc at 500 mA IDQ) support precise Class AB biasing with minimal drift.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - Fully specified for GSM1800 band operation, not extrapolated. |
| Output Power | 60 W CW - Validated at 26 Vdc, 500 mA IDQ, with 10:1 VSWR tolerance at 1840 MHz. |
| Power Gain | 13 dB typical - Measured in Freescale's production test fixture across full 1805–1880 MHz band. |
| Drain Efficiency | 45% typical - Achieved at 60 W CW output, enabling thermally efficient macrocell PA designs. |
| Thermal Resistance | 0.97 °C/W (Junction-to-Case) - Enables direct mounting to heatsink without thermal interface material degradation risk. |
| ESD Rating | HBM Class 2 (≥2 kV), MM Class M3 - Integrated protection reduces need for external TVS on gate path. |
| VDS Max | +65 Vdc - Supports safe operation with transient overvoltage margins in 26 Vdc supply rails. |
Pinout & Package
Package: NI-780 (Case 465-06, Style 1), hermetically sealed ceramic/metal flange-mount package with gold-plated leads (L suffix = 40 μ″ nominal). Designed for high-power RF PCB mounting with thermal via array under flange.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Drain | RF Power Output Terminal | High-current RF output node; electrically and thermally connected to metal flange - must be soldered to ground plane/heatsink. |
| 2 - Gate | RF Input Control Terminal | High-impedance control node; requires DC blocking and ESD protection per layout guidelines in Figure 1. |
| 3 - Source | RF Return / Bias Reference | Common RF return path; tied to system ground and used as bias reference for gate drive network. |
Key Features
| Feature | Design Value |
|---|---|
| Internally Matched I/O | Eliminates discrete matching networks for 50 Ω systems - reduces bill-of-materials and layout sensitivity in GSM PA stages. |
| High Linearity & Phase Flatness | Optimized for multicarrier CDMA/TDMA signals - maintains adjacent channel leakage ratio (ACLR) compliance without digital predistortion overhead. |
| Robust VSWR Tolerance | Rated for 10:1 VSWR at full 60 W CW - protects amplifier stage during antenna mismatch events in outdoor base stations. |
| Thermal Stability | Stable gain and efficiency across –40°C to +150°C case temperature - enables uncooled or minimally cooled small-cell deployments. |
| RoHS-Compliant Construction | Lead-free assembly compatible with reflow profiles up to 260°C peak - meets EU Directive 2011/65/EU without derating. |
Applications
| GSM Macrocell Transmitter | WLL Base Station PA |
|---|---|
|
Use Scenario: High-power final-stage amplifier in 1800 MHz GSM macrocell BTS supporting 8–12 carriers. IC Role / Device Role / Timing Role: RF power transistor delivering 60 W CW into 50 Ω load with Class AB biasing and internal impedance matching. Use Value: Delivers 13 dB gain and 45% efficiency across full 1805–1880 MHz band, reducing DC power draw and thermal management burden. |
Use Scenario: Linear power amplifier in fixed wireless access (WLL) base station operating in 1800–2000 MHz licensed spectrum. IC Role / Device Role / Timing Role: Final-stage RF MOSFET handling TDMA-modulated signals with tight ACLR requirements. Use Value: Maintains phase flatness and intermodulation distortion performance under multicarrier loading, minimizing baseband correction complexity. |
| PCN/PCS Infrastructure Amplifier | CDMA Cellular Repeater PA |
|
Use Scenario: Driver or final-stage amplifier in PCS 1900 MHz infrastructure equipment requiring high reliability and thermal margin. IC Role / Device Role / Timing Role: Lateral N-channel MOSFET biased in Class AB with 26 Vdc supply and 500 mA quiescent current. Use Value: Withstands 10:1 VSWR at full power - critical for repeater systems where antenna coupling varies dynamically. |
Use Scenario: High-efficiency linear PA in bidirectional CDMA cellular repeaters deployed in rural coverage zones. IC Role / Device Role / Timing Role: Internally matched RF power transistor operating at 26 Vdc with 60 W saturated output. Use Value: Integrated ESD protection (HBM Class 2) improves field reliability in uncontrolled environmental installations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF18030ALR3 | 30 W output rating, same NI-780 package, identical 1805–1880 MHz band and 26 Vdc operation. | Lower power tier for microcell or low-density urban deployments; reduced thermal mass and dissipation requirement. | Select when system output requirement is ≤30 W and PCB area or cooling capacity is constrained. |
| PD57018-E | 18 W GaN HEMT, 1805–2170 MHz, 28 Vdc, higher gain (15.5 dB), lower RθJC (0.55 °C/W). | Enables smaller heatsinks and higher efficiency in new designs but requires redesigned gate bias and matching networks. | Choose for next-generation upgrades prioritizing efficiency and bandwidth over drop-in replacement. |
Compared with MRF18060ALR5, MRF18030ALR3 offers lower power and thermal load for compact sites, while PD57018-E provides wider bandwidth and superior thermal performance at the cost of non-drop-in implementation and higher gate drive complexity.
Availability
MRF18060ALR5 is available at Aetrix Electronics and suitable for GSM macrocell transmitters, WLL base station power amplifiers, and PCN/PCS infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.
Supply support for MRF18060ALR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to support legacy RF power products including the MRF family for telecom infrastructure.
The MRF18060ALR5 belongs to NXP's high-power RF lateral MOSFET product line, engineered specifically for robust, high-efficiency GSM/PCS/WLL base station amplifiers operating in the 1.8–2.0 GHz band.
FAQ
What is the maximum continuous drain current rating for the MRF18060ALR5?
The MRF18060ALR5 does not specify a maximum continuous drain current (ID) rating directly; instead, it defines maximum total device dissipation (PD) as 180 W at TC ≥25°C, derated by 1.03 W/°C above that temperature. Its typical operating point is 500 mA IDQ at 26 Vdc, delivering 60 W CW output. Actual ID under RF load depends on duty cycle and thermal management.
Is the MRF18060ALR5 pin-compatible with the MRF18060ALSR3 variant?
No - the MRF18060ALR5 uses the NI-780 package (Case 465-06, Style 1) with 3-pin configuration (Drain, Gate, Source), while the MRF18060ALSR3 uses the NI-780S package (Case 465A-06) with 5-pin layout including two additional source terminals. Pin count, lead pitch, and flange dimensions differ; PCB redesign is required for substitution.
Does the MRF18060ALR5 require external matching components for 50 Ω operation?
No - the MRF18060ALR5 is internally matched for both input and output at 50 Ω across 1805–1880 MHz. Freescale's test fixtures (Figures 1 and 3) confirm full-band performance without external matching capacitors or transmission lines, though external DC blocking and bias chokes remain necessary per application circuit.
What is the gate threshold voltage range for the MRF18060ALR5?
The MRF18060ALR5 has a gate threshold voltage (VGS(th)) range of 2.0–4.0 Vdc, measured at VDS = 10 Vdc and ID = 300 μAdc. This ensures reliable turn-on behavior in Class AB bias networks using standard 3.3 V or 5 V control logic, with sufficient margin against false triggering.
Can the MRF18060ALR5 be used in pulsed-RF applications outside the GSM band?
The MRF18060ALR5 is characterized and guaranteed only for 1805–1880 MHz continuous-wave operation at 26 Vdc. While its lateral MOSFET structure supports pulsed operation, Freescale documentation does not validate performance outside this band or under non-CW conditions - use requires full application-level validation including thermal, linearity, and reliability testing.
MRF18060ALR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-957A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.81GHz ~ 1.88GHz
- Gain:
- 13dB
- Voltage - Test:
- 26 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 500 mA
- Power - Output:
- 60W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780H-2L
MRF18060ALR5 FAQ
1.How can I place an order for MRF18060ALR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF18060ALR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF18060ALR5 reliable?
The price and inventory of MRF18060ALR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF18060ALR5 is usually 5 days.
3.What payment methods are accepted for MRF18060ALR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF18060ALR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF18060ALR5?
MRF18060ALR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF18060ALR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF18060ALR5?
For technical support, including MRF18060ALR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF18060ALR5 requirements.
6.How does Aetrix verify that MRF18060ALR5 is sourced from the original manufacturer or authorized distributors?
All MRF18060ALR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF18060ALR5 meets industry standards.
7.What is the process for return or replacement of MRF18060ALR5?
All MRF18060ALR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF18060ALR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF18060ALR5 part is unused and in its original packaging.
Return procedure for MRF18060ALR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF18060ALR5 Tags
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SAV-551+
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