NXP Semiconductors MRF19030LR5

Overview

MRF19030LR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for class AB base station amplifiers in PCN/PCS bands. It delivers 30 W PEP output at 1930–1990 MHz with 13 dB typical two-tone power gain, 36% drain efficiency, and −31 dBc third-order IMD under 26 Vdc bias and 300 mA quiescent current.

For engineers reviewing the MRF19030LR5 datasheet, MRF19030LR5 pinout, MRF19030LR5 application, or MRF19030LR5 equivalent, this device is selected for high-linearity multicarrier RF power stages in FM, TDMA, CDMA, and LTE-adjacent infrastructure where thermal stability, internal input/output matching, and 10:1 VSWR ruggedness are critical design requirements.

Technical Context

This device operates as a common-source RF power amplifier stage with internally matched 50 Ω input and output networks optimized for 1930–1990 MHz. Its lateral MOSFET architecture enables excellent phase flatness and thermal stability, supported by a low R_θJC of 2.1 °C/W and rated junction temperature of 200 °C.

It is characterized using series-equivalent large-signal impedance parameters (e.g., Z_source = 10.47 − j7.21 Ω at 1960 MHz; Z_load = 5.84 − j4.67 Ω), enabling accurate broadband matching network design. ESD protection meets HBM Class 2 and MM Class M3 standards.

Key Specifications

Pinout & Package

Package: NI-400 (Case 465E-04, Style 1), hermetically sealed ceramic/metal flange-mount package with solderable leads. Dimensions: 20.19 × 9.65 × 4.14 mm (L × W × H), flange thickness 1.45–1.70 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF19030LSR5, MRF19030LR5 offers identical RF performance but requires the NI-400 footprint; versus PD57018-E, it trades 12 W lower PEP for superior 10:1 VSWR survivability and simplified biasing-critical for field-deployed infrastructure where reliability outweighs peak efficiency.

Availability

MRF19030LR5 is available at Aetrix Electronics and suitable for PCS base station transmitters, remote radio heads, and TDMA repeaters requiring stable component supply, long-lifecycle support, and RoHS-compliant RF power solutions.

Supply support for MRF19030LR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power from its Freescale acquisition.

The MRF19030LR5 belongs to NXP's legacy RF Power Lateral MOSFET product line, engineered specifically for high-reliability, high-linearity cellular infrastructure amplifiers operating in licensed 1.9 GHz bands.

FAQ

What is the maximum continuous drain current rating for MRF19030LR5?

The MRF19030LR5 does not specify a maximum continuous drain current (I_D) rating in its datasheet. Instead, it defines safe operating limits via total device dissipation (83.3 W at T_C = 25°C, derated 0.48 W/°C above), drain-source voltage (−0.5 to +65 Vdc), and junction temperature (200 °C). Actual current depends on bias point, thermal management, and RF loading-designers must verify I_D under operating conditions using measured V_DS and P_D.

Does MRF19030LR5 require external matching components for 1960 MHz operation?

No, MRF19030LR5 is internally matched for both input and output at 1930–1990 MHz. Its datasheet confirms integrated matching networks, and Figure 9 provides series-equivalent source/load impedances (e.g., Z_source = 10.47 − j7.21 Ω at 1960 MHz) for designing external broadband matching if needed-but basic operation requires only DC blocking and bias chokes per the reference schematic in Figure 1.

What is the gate threshold voltage range for MRF19030LR5?

The gate threshold voltage (V_GS(th)) for MRF19030LR5 is specified as 2–4 Vdc (min–max) at V_DS = 10 Vdc and I_D = 100 μAdc. This range reflects process variation and ensures reliable turn-on across temperature and unit-to-unit spread in class AB bias networks.

Can MRF19030LR5 be used in pulsed RF applications?

Yes, MRF19030LR5 supports pulsed operation, as confirmed by its 30 W CW rating and 10:1 VSWR tolerance at CW power. While the datasheet emphasizes class AB continuous-wave performance, its lateral MOSFET structure, 200 °C T_J rating, and thermal resistance (2.1 °C/W) make it suitable for radar or burst-mode applications-provided pulse width, duty cycle, and average power remain within the device's safe operating area defined by R_θJC and T_J limits.

Is MRF19030LR5 pin-compatible with MRF19030LR3?

Yes, MRF19030LR5 and MRF19030LR3 share identical NI-400 (Case 465E-04) packaging, pinout (Drain–Gate–Source), and mechanical dimensions. The "R5" and "R3" suffixes denote tape-and-reel quantities (500 vs. 250 units per reel) and do not indicate electrical or physical differences-the devices are functionally and mechanically interchangeable in existing designs.