NXP Semiconductors MRF19030LSR5

Overview

MRF19030LSR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for Class AB base station amplifiers in PCN/PCS bands. It delivers 30 W PEP output at 1930–1990 MHz with 13 dB typical two-tone power gain, 36% drain efficiency, and -31 dBc third-order IMD under 26 Vdc bias and 300 mA quiescent current - deployed in multicarrier CDMA, TDMA, and FM cellular infrastructure.

For engineers reviewing the MRF19030LSR5 datasheet, MRF19030LSR5 pinout, MRF19030LSR5 application, or MRF19030LSR5 equivalent, this device requires attention to its internally matched 25 Ω input/output impedance, NI-400S package thermal resistance (2.1 °C/W), VSWR ruggedness (10:1 at 30 W CW), and gate threshold voltage range (2–4 Vdc) when designing broadband RF power stages for 1.9 GHz wireless infrastructure.

Technical Context

This device operates as a common-source RF power amplifier stage with fixed 26 Vdc drain supply and 300 mA quiescent bias. Its internal input/output matching network eliminates external tuning components across 1930–1990 MHz, while series-equivalent source/load impedances (e.g., Z_source = 10.47 − j7.21 Ω at 1960 MHz) are characterized for system-level impedance synthesis.

It features integrated ESD protection (HBM Class 2, MM Class M3), low gold plating (40 μ″) on leads, and RoHS-compliant construction. Thermal design relies on case-to-ambient conduction via the flanged NI-400S metal package, rated for 150 °C case temperature and 200 °C junction temperature.

Key Specifications

Pinout & Package

Package: NI-400S (Case 465F-04, Style 1), flanged ceramic/metal hermetic package with solderable copper-tungsten baseplate and insulated lid. Dimensions: 10.03 × 10.03 × 4.14 mm (L × W × H), 3-pin configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF19030LSR5, MRF19030LR3 offers identical RF performance but less efficient thermal dissipation, while MRFE6VP6300H provides scalable power at the cost of design complexity and board area - making MRF19030LSR5 optimal for space-constrained, thermally sensitive 30 W multicarrier base station modules.

Availability

MRF19030LSR5 is available at Aetrix Electronics and suitable for CDMA base station transmitters, PCS multicarrier amplifiers, and FM broadcast booster applications requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure OEMs.

Supply support for MRF19030LSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power from its Freescale acquisition.

The MRF19030LSR5 belongs to NXP's legacy RF Power MOSFET product line, engineered specifically for high-efficiency, high-linearity Class AB amplification in 1.9 GHz cellular infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for MRF19030LSR5?

The MRF19030LSR5 does not specify a maximum continuous drain current (I_D) rating. Instead, its safe operating area is defined by total device dissipation (83.3 W at T_C = 25°C, derated 0.48 W/°C above), drain-source voltage (−0.5 to +65 Vdc), and case temperature limit (150 °C). Actual current depends on bias point, thermal design, and RF loading - typical Class AB operation uses 300 mA I_DQ at 26 Vdc.

Does MRF19030LSR5 require external matching components for 1960 MHz operation?

No, the MRF19030LSR5 is internally matched for both input and output across 1930–1990 MHz, including 1960 MHz. Freescale's datasheet confirms "Part is internally matched both on input and output" and provides series-equivalent Z-parameters (e.g., Z_source = 10.47 − j7.21 Ω, Z_load = 5.84 − j4.67 Ω) for verification - no external tuning capacitors or inductors are needed in the reference design.

What is the gate threshold voltage range for MRF19030LSR5?

The gate threshold voltage (V_GS(th)) for MRF19030LSR5 is specified as 2–4 Vdc (min–max) at V_DS = 10 Vdc and I_D = 100 μAdc. This defines the minimum gate voltage required to initiate conduction and informs bias network design - the typical gate quiescent voltage (V_GS(Q)) under 26 Vdc/300 mA operating conditions is 3.3 Vdc.

Can MRF19030LSR5 operate safely into a 10:1 VSWR load?

Yes, the MRF19030LSR5 is characterized to safely handle 10:1 VSWR at 1960 MHz, 26 Vdc, and 30 W CW output power without device failure. This ruggedness is enabled by its lateral MOSFET structure and integrated protection - a key requirement for base station amplifiers connected to real-world antenna systems with variable impedance.

What package type and pin configuration does MRF19030LSR5 use?

MRF19030LSR5 uses the NI-400S package (Case 465F-04, Style 1): a flanged ceramic/metal hermetic package with three terminals - Pin 1 (Drain), Pin 2 (Gate), Pin 3 (Source). The flange serves as thermal and electrical ground, and the package is optimized for surface-mount soldering onto copper heatsinks in RF power modules.