NXP Semiconductors MRF1K50H-27MHZ

Overview

MRF1K50H-27MHZ from NXP Semiconductors is a high-ruggedness RF power LDMOS transistor designed for industrial, broadcast, and aerospace applications operating at 27 MHz CW. It delivers 1550 W output power with 25.9 dB power gain and 78.3% drain efficiency at 50 Vdc supply, supporting VHF band amplification in high-VSWR environments such as plasma etching and radio broadcast transmitters.

For engineers reviewing the MRF1K50H-27MHZ datasheet, MRF1K50H-27MHZ pinout, MRF1K50H-27MHZ application, or MRF1K50H-27MHZ equivalent, this device requires attention to gate bias stability, thermal management at >150°C case temperature, load mismatch tolerance up to 65:1 VSWR, and balanced push–pull configuration compatibility per its dual-gate/dual-drain topology.

Technical Context

The MRF1K50H-27MHZ is a dual-gate, dual-drain enhancement-mode lateral MOSFET optimized for broadband operation from 1.8 to 500 MHz. Its unmatched input/output design enables stable performance across narrowband (e.g., 27 MHz, 81.36 MHz) and broadband (87.5–108 MHz) configurations without external matching networks at fundamental frequencies.

It features integrated ESD protection rated Class 2 HBM (2500 V), operates at 50 Vdc drain supply with quiescent gate voltage of 1.9–2.9 Vdc, and supports both CW and pulsed operation (100 µs, 20% duty cycle). Thermal resistance is 0.10 °C/W (CW) and transient impedance is 0.028 °C/W (pulse), enabling high-power dissipation in air-cavity NI-1230H-4S packaging.

Key Specifications

Pinout & Package

Package: NI-1230H-4S - air-cavity ceramic/metal flanged package with source connected to backside metal tab. Designed for conduction cooling via mounting to heatsink with thermal interface material.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF1K50H-27MHZ, MRF1K50N offers tighter thermal control without changing circuit topology, while MRFE6VP61K25H trades VHF ruggedness for UHF capability and requires PCB redesign - making MRF1K50H-27MHZ optimal for legacy and new 27–230 MHz industrial/broadcast systems demanding proven mismatch resilience.

Availability

MRF1K50H-27MHZ is available at Aetrix Electronics and suitable for industrial heating systems, broadcast transmitters, and aerospace VOR beacons requiring stable component supply over multi-year production cycles.

Supply support for MRF1K50H-27MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in RF power, automotive, and secure connectivity solutions, headquartered in Eindhoven, Netherlands.

The MRF1K50H-27MHZ belongs to NXP's high-ruggedness RF LDMOS portfolio, engineered specifically for mission-critical RF power amplification in ISM, broadcast, and aerospace systems where reliability under extreme VSWR and thermal stress is non-negotiable.

FAQ

What is the maximum continuous drain voltage rating for MRF1K50H-27MHZ?

The MRF1K50H-27MHZ has a maximum drain–source voltage rating of +135 Vdc. This rating ensures safe operation during transient overvoltage events common in RF amplifier switching and load mismatch scenarios. The device is specified for 50 Vdc nominal operation, and the +135 Vdc limit provides substantial headroom for voltage spikes without breakdown. This parameter is confirmed in Table 1 (Maximum Ratings) of the official NXP datasheet Rev. 1.1.

Can MRF1K50H-27MHZ be operated in push–pull configuration?

Yes, the MRF1K50H-27MHZ is explicitly characterized for push–pull operation, as stated in its Features list and supported by dual independent gate and drain terminals (Gate A/B, Drain A/B). This configuration improves linearity, suppresses even-order harmonics, and balances thermal load across both internal transistor cells. Reference circuits on pages 5–6 and 11–12 of the datasheet validate push–pull use at 81.36 MHz and 87.5–108 MHz bands.

What is the gate threshold voltage range for MRF1K50H-27MHZ?

The gate threshold voltage (V_GS(th)) for MRF1K50H-27MHZ is 1.7–2.7 Vdc, with a typical value of 2.2 Vdc, measured at V_DS = 10 Vdc and I_D = 2130 µAdc. This low threshold enables direct drive from standard gate bias networks and simplifies integration with controllers like the MRFE6VS25N driver. The specification is documented in Table 4 (Electrical Characteristics) of the NXP datasheet.

Does MRF1K50H-27MHZ include built-in ESD protection?

Yes, MRF1K50H-27MHZ incorporates integrated ESD protection meeting Human Body Model Class 2 (2500 V), Machine Model Class B (250 V), and Charge Device Model Class IV (2000 V). This eliminates the need for external gate protection diodes in most designs and enhances manufacturing yield and field reliability. Test methodology and pass criteria are detailed in Table 3 (ESD Protection Characteristics) of the datasheet.

What is the recommended driver IC for MRF1K50H-27MHZ?

The recommended driver for MRF1K50H-27MHZ is the MRFE6VS25N - a 25 W RF power LDMOS transistor also from NXP. This pairing is validated in the datasheet's Features section and supports optimal gain staging, impedance matching, and thermal co-design. The MRFE6VS25N delivers sufficient drive level to achieve full 1550 W output from MRF1K50H-27MHZ while maintaining linearity and stability across the 27 MHz band.