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NXP Semiconductors MRF1K50H-TF1
- Part No.:
- MRF1K50H-TF1
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF1K50H-TF1.pdf
- Description:
- MRF1K50H REF BRD 108MHZ 1475W
- Quantity:
- Payment:
- Shipping:
Inventory:1,255
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Product details
Overview
MRF1K50H-TF1 from NXP Semiconductors is a high-ruggedness, 50 V, 1500 W CW RF power LDMOS transistor designed for broadband operation from 1.8 to 500 MHz in industrial, broadcast, aerospace, and mobile radio amplifiers. It features dual-gate/dual-drain architecture, 23.7 dB typical power gain at 230 MHz, 74% drain efficiency under pulse conditions, and >65:1 load VSWR tolerance at 230 MHz with no degradation.
For engineers reviewing the MRF1K50H-TF1 datasheet, MRF1K50H-TF1 pinout, MRF1K50H-TF1 application, or MRF1K50H-TF1 equivalent, this page delivers verified electrical specs, ruggedness validation, thermal impedance data (0.028 °C/W pulsed), gate threshold voltage (1.7–2.7 V), and confirmed use in MRI systems, VHF TV broadcast transmitters, and particle accelerator RF drivers.
Technical Context
The MRF1K50H-TF1 is a laterally diffused MOSFET with enhancement-mode, N-channel operation and integrated ESD protection enabling Class C linear operation. Its unmatched input/output design supports single-ended or push-pull configurations across 1.8–500 MHz without retuning.
Thermal performance is defined by junction-to-case resistance of 0.10 °C/W (CW, 78°C case) and transient thermal impedance of 0.028 °C/W (100 µs, 20% duty). Avalanche energy absorption capability and ±6 V gate-source rating support high-VSWR industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–500 MHz - Enables single device coverage for ISM, broadcast, and aerospace bands without band-switching. |
| Output Power | 1500 W CW @ 50 V - Delivers full-rated continuous RF output in high-power amplifier stages. |
| Power Gain | 23.7 dB typ. @ 230 MHz - Provides sufficient small-signal gain to reduce driver stage complexity. |
| Drain Efficiency | 74% typ. @ 230 MHz pulse - Minimizes heat generation and DC power consumption in pulsed radar and comms systems. |
| VSWR Tolerance | >65:1 @ 230 MHz - Sustains operation under severe mismatch without failure-critical for plasma etching and MRI coils. |
| Junction Temp | –40 to +225°C - Supports reliable operation in sealed, high-ambient-temperature enclosures. |
| Thermal Resistance | 0.10 °C/W (CW) - Enables compact heatsink design with predictable thermal rise under sustained load. |
Pinout & Package
Package: NI-1230H-4S, ceramic/metal air-cavity package with source-connected backside metal tab. Dimensions: 42.2 × 22.2 × 4.9 mm (L × W × H). Mounting requires solder reflow per AN1908.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Pin 1) | High-current RF output terminal (Side A) | Carries half the total RF output current; must be impedance-matched independently in balanced designs. |
| Gate A (Pin 2) | Control electrode for Side A | Accepts gate bias and RF drive; requires stable negative/positive voltage control per Class AB/C operation. |
| Drain B (Pin 3) | High-current RF output terminal (Side B) | Paired with Drain A for push-pull or parallel operation; shares same VDD node in single-ended config. |
| Gate B (Pin 4) | Control electrode for Side B | Electrically isolated from Gate A; enables independent biasing for asymmetrical drive or fault isolation. |
| Backside | Source terminal (common for both sides) | Must be thermally and electrically connected to heatsink; serves as RF ground reference and primary thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| High avalanche energy absorption | Enables survival during arc events in plasma etching and laser RF cavities without latch-up or parametric shift. |
| Unmatched input/output ports | Eliminates need for external broadband matching networks across 1.8–500 MHz-reducing PCB area and insertion loss. |
| Single-ended or push-pull configurable | Supports flexible PA topology selection: one device for lower-cost transmitters or two in parallel for higher reliability. |
| Characterized from 30–50 V operation | Allows system-level optimization of DC supply voltage to balance efficiency, linearity, and thermal stress. |
| Integrated ESD protection | Passes 2500 V HBM, enabling robust handling in automated assembly and field-replaceable module integration. |
Applications
| Industrial Heating Systems | Radio Broadcast Transmitters |
|---|---|
Use Scenario: High-power RF energy delivery into industrial heating chambers for plastic welding and food drying. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating at 27–30 MHz with 1550 W CW output. Use Value: 78.3% drain efficiency at 27 MHz reduces cooling requirements and improves energy utilization over legacy bipolar devices. | Use Scenario: AM/FM broadcast transmitter final amplifier stage covering 87.5–108 MHz band. IC Role / Device Role / Timing Role: Linear RF power transistor delivering 1475 W CW output in broadband reference circuit. Use Value: 23.3 dB gain and 83.4% efficiency across full FM band enable single-device coverage without tuning or switching. |
| VHF Radar & Communications | MRI RF Power Amplifiers |
Use Scenario: Weather radar transmitter operating at 230 MHz with 1500 W peak pulse output. IC Role / Device Role / Timing Role: Pulsed RF power amplifier with 100 µs pulse width, 20% duty cycle, and >65:1 VSWR tolerance. Use Value: No device degradation under extreme load mismatch ensures operational continuity during antenna icing or mechanical misalignment. | Use Scenario: MRI body coil driver requiring precise, stable RF excitation at 64–128 MHz. IC Role / Device Role / Timing Role: Linear Class AB amplifier delivering 1400 W CW at 81.36 MHz with low harmonic distortion. Use Value: Harmonic suppression to –28 dBc (H3) and –30 dBc (H2) meets medical imaging spectral purity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1K50N | Lower thermal resistance (0.08 °C/W vs. 0.10 °C/W), identical electrical specs, same NI-1230H-4S package. | Better suited for ultra-high-power CW applications where junction temperature margin is critical. | Select MRF1K50N when ambient temperature exceeds 75°C or heatsink thermal resistance is >0.25 °C/W. |
| MRFE6VP61K25H | Higher frequency range (up to 1.3 GHz), 2500 W CW rating, but lower gain (22.5 dB) and narrower bandwidth per match. | Targeted at UHF broadcast and military comms above 400 MHz-not suitable for sub-300 MHz ISM or VHF TV. | Choose MRFE6VP61K25H only if operating above 500 MHz or requiring >1.5 kW CW beyond 300 MHz. |
Compared with MRF1K50N, the MRF1K50H-TF1 trades marginal thermal margin for assured long-term availability (15-year longevity program); versus MRFE6VP61K25H, it offers superior gain and broader low-band coverage but lacks UHF capability-making it optimal for fixed-frequency 1.8–500 MHz infrastructure.
Availability
MRF1K50H-TF1 is available at Aetrix Electronics and suitable for industrial heating systems, VHF TV broadcast transmitters, and aerospace radar requiring stable component supply over extended production lifecycles.
Supply support for MRF1K50H-TF1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communication infrastructure markets.
The MRF1K50H-TF1 belongs to NXP's high-ruggedness RF power LDMOS family, engineered specifically for mission-critical amplification in high-VSWR industrial, broadcast, and scientific applications demanding multi-decade supply assurance.
FAQ
What is the maximum continuous drain current rating for the MRF1K50H-TF1?
The MRF1K50H-TF1 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by maximum drain-source voltage (VDSS = +135 V), total device dissipation (1667 W @ TC = 25°C), and junction temperature limit (+225°C). Actual current depends on bias point, frequency, and thermal management-typical quiescent ID(A+B) ranges from 100 mA to 200 mA in reference circuits. Designers must verify current under actual operating conditions using the SOA curves in the datasheet.
Does the MRF1K50H-TF1 require external gate protection diodes?
No, the MRF1K50H-TF1 includes integrated ESD protection rated to 2500 V HBM, 250 V MM, and 2000 V CDM. External gate protection diodes are not required for standard handling or circuit operation. However, in systems exposed to lightning-induced transients or high-energy RF feedback, additional transient voltage suppression at the gate feed may be prudent-per AN1955 guidelines.
Can the MRF1K50H-TF1 be operated at 30 V DC supply instead of 50 V?
Yes, the MRF1K50H-TF1 is characterized for operation from 30 to 50 V DC, as stated in its features. At 30 V, output power and efficiency decrease-e.g., Pout drops to ~800 W and ηD falls to ~65% at 230 MHz-but gain remains usable (~22 dB). This allows flexible power supply design and reduced thermal stress in lower-power or derated applications.
What is the recommended driver device for the MRF1K50H-TF1?
NXP explicitly recommends the MRFE6VS25N (25 W RF power LDMOS) as the driver for the MRF1K50H-TF1. This pairing is validated in NXP reference designs and ensures proper gain staging, impedance matching, and stability across 1.8–500 MHz. The MRFE6VS25N provides adequate drive level (≥7 W input) while maintaining linearity and thermal headroom for the MRF1K50H-TF1's 1500 W output requirement.
Is the MRF1K50H-TF1 pin-compatible with the MRF1K50HR5?
Yes, the MRF1K50H-TF1 and MRF1K50HR5 share identical NI-1230H-4S packaging, pinout, and electrical specifications. The "R5" suffix denotes tape-and-reel packaging (50 units, 56 mm tape width), while "TF1" indicates tray packaging-both are functionally and mechanically interchangeable in PCB layout and circuit design.
MRF1K50H-TF1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 87.5MHz ~ 108MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRF1K50H
MRF1K50H-TF1 FAQ
1.How can I place an order for MRF1K50H-TF1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1K50H-TF1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1K50H-TF1 reliable?
The price and inventory of MRF1K50H-TF1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1K50H-TF1 is usually 5 days.
3.What payment methods are accepted for MRF1K50H-TF1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1K50H-TF1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1K50H-TF1?
MRF1K50H-TF1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1K50H-TF1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1K50H-TF1?
For technical support, including MRF1K50H-TF1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1K50H-TF1 requirements.
6.How does Aetrix verify that MRF1K50H-TF1 is sourced from the original manufacturer or authorized distributors?
All MRF1K50H-TF1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1K50H-TF1 meets industry standards.
7.What is the process for return or replacement of MRF1K50H-TF1?
All MRF1K50H-TF1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1K50H-TF1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1K50H-TF1 part is unused and in its original packaging.
Return procedure for MRF1K50H-TF1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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