My Inquiry
My Account
NXP Semiconductors MRF1K50H-TF3
- Part No.:
- MRF1K50H-TF3
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF1K50H-TF3.pdf
- Description:
- MRF1K50H REF BRD 81.36MHZ 1400W
- Quantity:
- Payment:
- Shipping:
Inventory:2,879
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MRF1K50H-TF3 from NXP Semiconductors is a high-ruggedness, 50 V, 1500 W CW RF power LDMOS transistor optimized for broadband operation from 1.8 to 500 MHz. It features dual-gate/dual-drain architecture, 23.7 dB typical power gain at 230 MHz, 74% drain efficiency under pulse conditions, and >65:1 load VSWR tolerance at 230 MHz with no degradation. It is deployed in industrial plasma etching, VHF TV broadcast amplifiers, and aerospace weather radar transmitters.
For engineers reviewing the MRF1K50H-TF3 datasheet, MRF1K50H-TF3 pinout, MRF1K50H-TF3 application, or MRF1K50H-TF3 equivalent, this page delivers verified electrical specs, ruggedness validation data, thermal impedance metrics, gate threshold voltage range (1.7–2.7 V), and confirmed alternative part options for high-power RF amplifier design across ISM, broadcast, and mobile radio systems.
Technical Context
The MRF1K50H-TF3 is a laterally diffused MOSFET with enhancement-mode, N-channel operation and integrated ESD protection rated to Class 2 HBM (2500 V). Its unmatched input/output impedance enables wideband matching without external tuning networks across 1.8–500 MHz.
It operates in both single-ended and push-pull configurations, supports quiescent current adjustment from 100 mA to 200 mA per side, and is characterized for stable performance at case temperatures from –40°C to +150°C with junction temperature up to +225°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–500 MHz - Enables single-device coverage of HF through UHF bands without re-tuning. |
| Output Power (CW) | 1500 W @ 50 Vdc - Delivers full-rated continuous RF output in industrial heating and broadcast final stages. |
| Power Gain | 23.7 dB @ 230 MHz, 1500 W peak - Ensures efficient driver stage sizing; MRFE6VS25N (25 W) is recommended. |
| Drain Efficiency | 74% @ 230 MHz, pulse (100 µs, 20% duty) - Reduces thermal load and heatsink requirements in pulsed radar applications. |
| Thermal Resistance (Junction-to-Case) | 0.10 °C/W @ 88 MHz, 1500 W CW - Enables high-power dissipation with manageable case temperature rise under continuous operation. |
| VSWR Tolerance | >65:1 @ 230 MHz, all phase angles - Guarantees survivability in mismatched antenna environments like plasma chambers and mobile base stations. |
| Junction Temperature Limit | +225°C - Supports reliable operation in high ambient or thermally constrained enclosures. |
Pinout & Package
The MRF1K50H-TF3 is housed in the NI-1230H-4S air-cavity ceramic package with metalized backside acting as the common source terminal. The top-view pin layout consists of four terminals: Pin 1 (Gate A), Pin 2 (Gate B), Pin 3 (Drain A), Pin 4 (Drain B).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate A | Independent gate control for first transistor half; enables balanced push-pull biasing and asymmetry compensation. |
| Pin 2 | Gate B | Independent gate control for second transistor half; allows differential drive and independent DC bias adjustment. |
| Pin 3 | Drain A | High-current RF output node for first half; requires low-inductance connection to output matching network. |
| Pin 4 | Drain B | High-current RF output node for second half; symmetric layout supports balanced combiner integration. |
Key Features
| Feature | Design Value |
|---|---|
| High avalanche energy absorption | Enables robust operation during transient overloads and load mismatches without latch-up or parametric shift. |
| Unmatched input/output design | Eliminates need for external broadband matching networks across 1.8–500 MHz, reducing PCB area and insertion loss. |
| Single-ended or push-pull configurable | Supports flexible amplifier topology selection-single-stage high-efficiency or push-pull linear operation with improved harmonic suppression. |
| Characterized from 30–50 V operation | Allows system-level voltage scaling for efficiency vs. linearity trade-offs without derating or qualification retest. |
| Integrated ESD protection | Passes 2500 V HBM, enabling safer handling and reduced risk of gate oxide damage during assembly and test. |
Applications
| Plasma Etching System | VHF TV Broadcast Transmitter |
|---|---|
Use Scenario: High-power RF generation (27–108 MHz) to sustain reactive plasma in semiconductor wafer fabrication chambers. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1500 W CW into dynamic, highly reflective plasma loads. Use Value: >65:1 VSWR tolerance ensures uninterrupted operation despite rapid plasma impedance shifts, eliminating costly downtime and arcing events. | Use Scenario: Terrestrial analog/digital VHF TV transmission (87.5–108 MHz) requiring high linearity and spectral purity. IC Role / Device Role / Timing Role: High-efficiency final amplifier operating in Class AB/C with broadband harmonic filtering. Use Value: 83.4% drain efficiency at 98 MHz reduces cooling infrastructure cost and improves overall transmitter energy efficiency. |
| Aerospace Weather Radar | Industrial RF Heating |
Use Scenario: Pulsed Doppler radar (230 MHz) for airborne meteorological sensing with strict MTTF and ruggedness requirements. IC Role / Device Role / Timing Role: Pulse-modulated RF power stage delivering 1500 W peak with 100 µs pulse width and 20% duty cycle. Use Value: 0.028 °C/W thermal impedance under pulse conditions maintains junction temperature below 225°C, ensuring >100,000-hour MTTF. | Use Scenario: Continuous-wave RF energy delivery (1.8–30 MHz) for industrial drying, welding, and food processing systems. IC Role / Device Role / Timing Role: Linear broadband amplifier driving resonant tank circuits with variable load impedance. Use Value: Unmatched input/output design simplifies impedance transformation across wide frequency sweeps, reducing matching complexity and component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1K50N | Lower thermal resistance (0.08 °C/W vs. 0.10 °C/W), same pinout and electrical specs. | Better suited for ultra-high-power CW applications where junction temperature margin is critical. | Select MRF1K50N when thermal headroom is constrained and case temperature exceeds 78°C in sustained operation. |
| MRFE6VP61K25H | Higher P1dB (1650 W), wider bandwidth (1.8–2000 MHz), but lower efficiency (68% @ 230 MHz) and higher gate charge. | Preferred for multi-band military comms or broadband EW systems requiring extended upper-frequency coverage. | Choose MRFE6VP61K25H only if operation above 500 MHz is required; otherwise MRF1K50H-TF3 offers superior efficiency and ruggedness below 500 MHz. |
Compared with MRF1K50N and MRFE6VP61K25H, the MRF1K50H-TF3 provides optimal balance of ruggedness (>65:1 VSWR), efficiency (74–83%), and thermal performance for fixed-band industrial and broadcast applications below 500 MHz-without sacrificing reliability or requiring layout changes.
Availability
MRF1K50H-TF3 is available at Aetrix Electronics and suitable for industrial plasma etching, VHF TV broadcast transmitters, and aerospace weather radar systems requiring stable component supply across long production lifecycles.
Supply support for MRF1K50H-TF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, with deep expertise in LDMOS technology and industrial-grade reliability engineering.
The MRF1K50H-TF3 belongs to NXP's high-ruggedness RF power transistor product line, designed specifically for mission-critical broadband amplification in harsh electromagnetic and thermal environments.
FAQ
What is the maximum continuous drain-source voltage rating for the MRF1K50H-TF3?
The MRF1K50H-TF3 has a maximum drain-source voltage rating of +135 Vdc, with a minimum rating of –0.5 Vdc. This specification is defined in Table 1 (Maximum Ratings) of the official NXP datasheet Rev. 1.1. Operation beyond these limits risks permanent device failure. The MRF1K50H-TF3 is typically operated at 50 Vdc in production designs, as validated across all reference circuits and functional tests.
Does the MRF1K50H-TF3 require external gate protection diodes?
No, the MRF1K50H-TF3 integrates ESD protection that meets Class 2 HBM (2500 V), Class B MM (250 V), and Class IV CDM (2000 V) standards per Tables 3 and 4. External gate protection diodes are not required in standard layouts. However, proper PCB layout practices-including short gate traces, local decoupling, and controlled ESD handling-are still mandatory to preserve the built-in protection integrity of the MRF1K50H-TF3.
What is the gate threshold voltage range for the MRF1K50H-TF3 at 25°C?
The gate threshold voltage (VGS(th)) for the MRF1K50H-TF3 is specified as 1.7–2.7 Vdc at VDS = 10 Vdc and ID = 2130 µAdc, per Table 4 of the NXP datasheet. This range reflects unit-to-unit variation and must be measured per-side (A and B) due to dual-gate architecture. The MRF1K50H-TF3's typical quiescent gate voltage is 2.4 Vdc at IDQ(A+B) = 100 mA and VDD = 50 Vdc.
Can the MRF1K50H-TF3 be used in Class C amplifier configurations?
Yes, the MRF1K50H-TF3 supports Class C operation due to its extended negative gate-source voltage range (–6.0 Vdc) and integrated ESD protection, which improve turn-off robustness and reduce risk of gate punch-through. Its suitability for Class C is explicitly stated in the "Features" section of the datasheet. However, harmonic filtering and load-pull optimization are essential, as demonstrated in the 87.5–108 MHz broadband reference circuit where harmonic suppression reaches –28 dBc (H3) and –46 dBc (H4) at 1200 W CW output.
What is the thermal impedance (ZθJC) of the MRF1K50H-TF3 under pulsed RF conditions?
The thermal impedance (ZθJC) of the MRF1K50H-TF3 is 0.028 °C/W under pulsed conditions: 100 µsec pulse width, 20% duty cycle, 230 MHz, case temperature 73°C, and IDQ(A+B) = 100 mA, as specified in Table 2. This value is significantly lower than its CW thermal resistance (0.10 °C/W), reflecting the transient nature of heat diffusion during short pulses-a key parameter for radar and pulsed industrial heating applications using the MRF1K50H-TF3.
MRF1K50H-TF3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Transistor
- Frequency:
- 81.36MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRF1K50H
MRF1K50H-TF3 FAQ
1.How can I place an order for MRF1K50H-TF3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1K50H-TF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1K50H-TF3 reliable?
The price and inventory of MRF1K50H-TF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1K50H-TF3 is usually 5 days.
3.What payment methods are accepted for MRF1K50H-TF3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1K50H-TF3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1K50H-TF3?
MRF1K50H-TF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1K50H-TF3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1K50H-TF3?
For technical support, including MRF1K50H-TF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1K50H-TF3 requirements.
6.How does Aetrix verify that MRF1K50H-TF3 is sourced from the original manufacturer or authorized distributors?
All MRF1K50H-TF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1K50H-TF3 meets industry standards.
7.What is the process for return or replacement of MRF1K50H-TF3?
All MRF1K50H-TF3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1K50H-TF3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1K50H-TF3 part is unused and in its original packaging.
Return procedure for MRF1K50H-TF3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF1K50H-TF3 Tags
-
113991054
Seeed Technology Co., Ltd
-
SC0918
Raspberry Pi
-
113991114
Seeed Technology Co., Ltd
-
ESP32-C6-DEVKITM-1-N4
Espressif Systems
-
ESP32-DEVKITM-1
Espressif Systems
-
C008
M5Stack Technology Co., Ltd.
-
ESP32-C3-DEVKITC-02
Espressif Systems
-
ESP32-C6-DEVKITC-1-N8
Espressif Systems
-
DFR0478
DFRobot
-
102010448
Seeed Technology Co., Ltd
-
ESP32-DEVKITC-32E
Espressif Systems
-
ESP32-DEVKITC-32UE
Espressif Systems
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
