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NXP Semiconductors MRF1K50H-TF4
- Part No.:
- MRF1K50H-TF4
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF1K50H-TF4.pdf
- Description:
- MRF1K50H REF BRD 230MHZ 1500W
- Quantity:
- Payment:
- Shipping:
Inventory:2,034
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Product details
Overview
MRF1K50H-TF4 from NXP Semiconductors is a high-ruggedness, 1500 W CW, 50 V RF power LDMOS transistor optimized for broadband operation from 1.8 to 500 MHz. It features dual-gate/dual-drain architecture, 78.3% drain efficiency at 27 MHz, and >65:1 load mismatch tolerance at 230 MHz - enabling robust deployment in industrial heating, broadcast amplifiers, and aerospace VHF transmitters.
For engineers reviewing the MRF1K50H-TF4 datasheet, MRF1K50H-TF4 pinout, MRF1K50H-TF4 application, or MRF1K50H-TF4 equivalent, this page delivers verified electrical specs, thermal impedance (0.028 °C/W pulsed), ruggedness test results, package mechanical data, and two validated alternative parts with documented functional trade-offs.
Technical Context
The MRF1K50H-TF4 implements a lateral N-channel enhancement-mode LDMOS structure with integrated ESD protection and a negative gate-source voltage range supporting Class C operation. Its unmatched input/output design eliminates external matching networks across 1.8–500 MHz, while dual independent gate and drain terminals enable single-ended or push-pull configurations.
Thermal performance is defined by junction-to-case thermal resistance of 0.10 °C/W (CW) and transient thermal impedance of 0.028 °C/W (100 µs pulse, 20% duty), measured at 230 MHz under production test conditions. Ruggedness validation includes no degradation at >65:1 VSWR with 13 W peak input at 50 VDD.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–500 MHz - supports wideband ISM, broadcast, and aerospace bands without retuning |
| Output Power | 1500 W CW @ 27 MHz - enables high-power amplifier stages in industrial plasma systems |
| Drain Efficiency | 78.3% @ 27 MHz - reduces thermal load and cooling requirements in enclosed enclosures |
| Load Mismatch Tolerance | >65:1 VSWR @ 230 MHz - sustains operation under antenna fault or detuning in broadcast transmitters |
| Thermal Impedance | 0.028 °C/W (pulsed) - allows rapid heat dissipation during radar pulse bursts |
| Junction Temp Limit | +225 °C - supports continuous high-power operation in thermally constrained environments |
| Gate Threshold Voltage | 1.7–2.7 V - ensures stable turn-on margin across temperature and process variation |
Pinout & Package
Package: NI-1230H-4S - ceramic/metal air-cavity package with source-connected backside, rated for 150 °C case temperature and designed for low-inductance mounting on copper heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Pin 1) | Power output terminal A | Independent drain path for balanced push-pull configuration; requires separate RF output matching |
| Gate A (Pin 2) | Control input A | Enables differential drive; gate-source voltage range –6.0 to +10 Vdc supports Class AB/C biasing |
| Drain B (Pin 4) | Power output terminal B | Second drain for symmetrical current sharing; identical to Drain A electrically and thermally |
| Gate B (Pin 3) | Control input B | Complementary gate for push-pull operation; matched threshold and transconductance to Gate A |
Key Features
| Feature | Design Value |
|---|---|
| High avalanche energy absorption | Withstands repeated drain-source overvoltage events without parameter shift or failure |
| Unmatched input/output design | Eliminates need for external broadband matching networks across 1.8–500 MHz |
| Single-ended or push-pull operation | Dual independent gate/drain pairs support both topologies without redesign |
| Characterized from 30–50 V operation | Validated gain and efficiency across full supply range simplifies PSU selection |
| Integrated ESD protection | HBM Class 2 (2500 V), MM Class B (250 V), CDM Class IV (2000 V) - reduces board-level protection needs |
Applications
| Industrial Heating Systems | Broadcast Transmitters |
|---|---|
Use Scenario: High-power RF energy delivery to induction coils in metal hardening and plastic welding equipment. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating at 27–108 MHz with 1500 W CW output. Use Value: 78.3% drain efficiency minimizes cooling infrastructure cost and size in factory-floor cabinets. | Use Scenario: VHF TV and FM radio broadcast final amplifiers requiring high linearity and reliability. IC Role / Device Role / Timing Role: High-ruggedness RF power stage delivering 1475 W CW at 87.5–108 MHz. Use Value: >65:1 VSWR tolerance prevents shutdown during antenna icing or cable faults in remote transmitter sites. |
| Aerospace VOR/Comm | Medical MRI Amplifiers |
Use Scenario: Solid-state replacement for tube-based VHF omnidirectional range (VOR) ground stations. IC Role / Device Role / Timing Role: 230 MHz pulsed RF amplifier (100 µs, 20% duty) delivering 1500 W peak output. Use Value: 0.028 °C/W thermal impedance ensures stable gain during repetitive pulse sequences without derating. | Use Scenario: Gradient coil driver amplifiers in MRI systems requiring precise amplitude control and low distortion. IC Role / Device Role / Timing Role: Linear RF power stage operating at 1–10 MHz with 1400 W CW output at 81.36 MHz reference point. Use Value: 23.0 dB power gain and 75.0% efficiency reduce harmonic content and thermal drift in magnetic field stability loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1K50N | Lower thermal resistance (0.09 °C/W CW), same pinout and electrical specs, but not qualified for >150 °C case temperature | Better suited for conduction-cooled designs where case temp stays ≤135 °C | Select MRF1K50N when thermal interface resistance is low and ambient cooling is aggressive |
| MRFE6VP61K25H | Higher P1dB (1740 W vs. 1414 W at 81.36 MHz), same 50 V operation, but narrower frequency range (1.8–250 MHz) | Optimized for HF/VHF broadcast where extended UHF coverage is unnecessary | Choose MRFE6VP61K25H when prioritizing peak power headroom over 250–500 MHz coverage |
Compared with MRF1K50H-TF4, MRF1K50N offers improved steady-state thermal performance but reduced high-temperature reliability, while MRFE6VP61K25H trades upper-bandwidth capability for higher saturated output power - making each suitable for distinct thermal or spectral design constraints.
Availability
MRF1K50H-TF4 is available at Aetrix Electronics and suitable for industrial heating, broadcast transmitters, and aerospace VHF communications requiring stable component supply over extended production lifecycles.
Supply support for MRF1K50H-TF4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communication markets, with deep expertise in RF power technology.
The MRF1K50H-TF4 belongs to NXP's high-ruggedness RF LDMOS portfolio, engineered specifically for mission-critical broadband amplification in ISM, broadcast, and aerospace systems demanding >65:1 VSWR tolerance and 15-year product longevity assurance.
FAQ
What is the maximum continuous drain current rating for the MRF1K50H-TF4?
The MRF1K50H-TF4 does not specify a maximum continuous drain current in its datasheet. Instead, safe operation is defined by thermal limits: total device dissipation is 1667 W at TC = 25°C, derating linearly above that temperature. Actual current depends on VDD, efficiency, and heatsink performance - typical quiescent current is 100–200 mA per side, with pulsed peak currents exceeding 100 A during RF output.
Does the MRF1K50H-TF4 require external gate protection diodes?
No, the MRF1K50H-TF4 integrates ESD protection meeting HBM Class 2 (2500 V), MM Class B (250 V), and CDM Class IV (2000 V) standards. External gate protection is not required for standard handling and PCB layout, though proper RF grounding and controlled-impedance gate traces remain essential for stability and reliability in high-power amplifiers using the MRF1K50H-TF4.
Can the MRF1K50H-TF4 be operated in Class C mode?
Yes, the MRF1K50H-TF4 supports Class C operation due to its extended negative gate-source voltage range (–6.0 V), which improves reverse-bias margin and enables efficient tuned amplifier designs. The datasheet explicitly cites this feature for improved Class C operation, and the device is characterized with 100 mA quiescent current in pulsed tests - consistent with typical Class C bias points. Always verify thermal and voltage stress margins for your specific MRF1K50H-TF4 implementation.
What is the recommended driver device for the MRF1K50H-TF4?
NXP recommends the MRFE6VS25N - a 25 W RF power LDMOS transistor - as the optimal driver for the MRF1K50H-TF4. This pairing is validated in NXP reference designs and provides sufficient gain and power to fully drive the MRF1K50H-TF4 into saturation across its 1.8–500 MHz bandwidth while maintaining stability and linearity in broadband amplifier chains.
Is the MRF1K50H-TF4 included in NXP's product longevity program?
Yes, the MRF1K50H-TF4 is included in NXP's product longevity program, with assured supply guaranteed for a minimum of 15 years after product launch. This commitment supports long-lifecycle deployments in industrial, broadcast, and aerospace systems where component obsolescence poses critical risk - confirming sustained availability of the MRF1K50H-TF4 for maintenance, spares, and new production through at least 2032.
MRF1K50H-TF4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 230MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRF1K50H
MRF1K50H-TF4 FAQ
1.How can I place an order for MRF1K50H-TF4 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1K50H-TF4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1K50H-TF4 reliable?
The price and inventory of MRF1K50H-TF4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1K50H-TF4 is usually 5 days.
3.What payment methods are accepted for MRF1K50H-TF4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1K50H-TF4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1K50H-TF4?
MRF1K50H-TF4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1K50H-TF4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1K50H-TF4?
For technical support, including MRF1K50H-TF4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1K50H-TF4 requirements.
6.How does Aetrix verify that MRF1K50H-TF4 is sourced from the original manufacturer or authorized distributors?
All MRF1K50H-TF4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1K50H-TF4 meets industry standards.
7.What is the process for return or replacement of MRF1K50H-TF4?
All MRF1K50H-TF4 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1K50H-TF4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1K50H-TF4 part is unused and in its original packaging.
Return procedure for MRF1K50H-TF4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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