My Inquiry
My Account
NXP Semiconductors MRF1K50N-230MHZ
- Part No.:
- MRF1K50N-230MHZ
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF1K50N-230MHZ.pdf
- Description:
- MRF1K50N-230MHZ
- Quantity:
- Payment:
- Shipping:
Inventory:3,236
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MRF1K50N-230MHZ from NXP Semiconductors is a high-ruggedness, 50 V, 1500 W peak RF power LDMOS transistor optimized for narrowband operation at 230 MHz in pulse mode (100 μs, 20% duty cycle). It delivers 23.4 dB power gain and 75.1% drain efficiency with 1500 W peak output power, and features >65:1 load VSWR tolerance at all phase angles under overdrive - enabling robust operation in industrial heating, radar, and broadcast transmitters.
For engineers reviewing the MRF1K50N-230MHZ datasheet, MRF1K50N-230MHZ pinout, MRF1K50N-230MHZ application, or MRF1K50N-230MHZ equivalent, key selection criteria include its 230 MHz narrowband production-test validated performance, dual-gate/dual-drain push–pull capability, 225°C max junction temperature, ESD-rated gate (HBM Class 2, CDM Class C3), and thermal impedance of 0.015 °C/W under pulsed conditions.
Technical Context
This device is a laterally diffused MOSFET with two independent gate–drain channels (Gate A/Gate B, Drain A/Drain B) housed in a single OM-1230-4L plastic package. Its design supports both single-ended and push–pull configurations, with gate threshold voltage specified at 1.7–2.7 V and forward transconductance of 33.5 S per side.
Thermal management is enabled by direct-source-to-heatsink mounting (exposed backside = source terminal), and ruggedness is achieved via high avalanche energy absorption and integrated ESD protection allowing –6.0 V to +10 V gate–source operating range. All functional test data at 230 MHz were measured in NXP's production test fixture with device soldered to heatsink and VDD = 50 Vdc.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Pout (Peak) | 1500 W at 230 MHz, 100 μs pulse, 20% duty cycle - enables high-power radar and industrial plasma drivers |
| Gps | 23.4 dB typical - provides sufficient gain to reduce driver stage complexity in high-efficiency amplifiers |
| ηD | 75.1% typical - reduces cooling requirements and improves system-level DC-to-RF efficiency |
| VSWR Tolerance | >65:1 at all phase angles with 15 W peak input overdrive - ensures survivability in mismatched antenna systems |
| RθJC (Pulse) | 0.015 °C/W - supports high transient power dissipation when mounted on copper heatsink |
| TJ Max | +225°C - allows operation in high ambient environments such as enclosed broadcast cabinets or mobile radio shelters |
| VGS Range | –6.0 V to +10 V - accommodates negative gate bias for Class C operation and protects against ESD-induced latch-up |
Pinout & Package
Package: OM-1230-4L, plastic overmolded, exposed source (backside) for direct heatsink mounting. Dimensions per NXP drawing OM-1230-4L.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate A) | Control electrode for Channel A | Independent gate input; enables balanced push–pull drive or dual-channel operation |
| 2 (Gate B) | Control electrode for Channel B | Electrically isolated from Gate A; allows differential or separate biasing |
| 3 (Drain A) | High-power RF output node for Channel A | Must be impedance-matched to 1.7 + j0.9 Ω (230 MHz narrowband Zload) for optimal efficiency |
| 4 (Drain B) | High-power RF output node for Channel B | Paired with Drain A in push–pull configuration; combined output delivers full 1500 W peak |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent LDMOS channels | Enables push–pull amplifier topology without external combining networks - reduces insertion loss and layout complexity |
| Unmatched input/output impedance | Validated 1.0 + j2.0 Ω source and 1.7 + j0.9 Ω load impedances at 230 MHz - simplifies matching network design using standard Smith chart techniques |
| High avalanche energy rating | Withstands repetitive drain–source voltage overshoot during VSWR events - eliminates need for external snubbers in ruggedized transmitters |
| ESD-protected gate structure | HBM Class 2 (2500 V), CDM Class C3 (2000 V) - permits safe handling and assembly without special grounding protocols |
| Wide VDD operating range | Characterized from 30 V to 50 V - supports flexible power supply design and derating for long-term reliability |
Applications
| Industrial Plasma Etching | Weather Radar Transmitter |
|---|---|
Use Scenario: High-power RF excitation of low-pressure gas chambers to generate reactive plasma for semiconductor wafer processing. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering pulsed 230 MHz energy into capacitive plasma load. Use Value: >65:1 VSWR tolerance prevents failure during rapid plasma ignition transients; 75.1% efficiency minimizes coolant flow requirements in cleanroom environments. |
Use Scenario: Pulsed RF transmitter in S-band weather radar systems requiring high peak power and thermal stability across wide temperature ranges. IC Role / Device Role / Timing Role: 230 MHz driver stage amplifying chirped pulses with 100 μs width and 20% duty cycle. Use Value: 225°C junction rating ensures uninterrupted operation in uncooled outdoor radomes; dual-drain architecture supports coherent combining for beamforming. |
| VHF Broadcast Amplifier | Aerospace VOR Beacon |
Use Scenario: Solid-state replacement for tube-based AM/FM broadcast transmitters operating in the 174–230 MHz band. IC Role / Device Role / Timing Role: Linear RF power output stage delivering 1500 W peak into 50 Ω antenna feedline. Use Value: 23.4 dB gain reduces driver stage count; 83.2% CW efficiency (at 98 MHz) and 75.1% pulsed efficiency (at 230 MHz) lower AC power draw and HVAC load. |
Use Scenario: Ground-based VHF omnidirectional range (VOR) navigation beacon transmitting continuous-wave signals at 108–118 MHz, with 230 MHz test harmonics suppression critical. IC Role / Device Role / Timing Role: High-linearity final amplifier ensuring spectral purity and harmonic compliance per DO-160E Section 21. Use Value: Harmonic suppression to –44 dBc at 350 MHz (4× fundamental) verified in reference circuit - meets FCC Part 2 and RTCA DO-160E emissions limits without external filters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61K25H | Higher frequency range (1.8–2500 MHz), lower peak power (1200 W), GaN-on-SiC process | Better suited for broadband multi-band military comms; less rugged at 230 MHz VSWR | Select when wide instantaneous bandwidth or higher switching speed is required over absolute ruggedness |
| BLF188XR | LDMOS, 230 MHz-optimized, 1800 W peak, but rated only to +200°C junction and no documented >65:1 VSWR test | Used in broadcast where thermal margin > ruggedness; lacks NXP's avalanche energy validation | Choose for cost-sensitive broadcast deployments where ambient cooling is guaranteed and antenna match is stable |
Compared with MRFE6VP61K25H and BLF188XR, the MRF1K50N-230MHZ offers superior VSWR survival and higher junction temperature rating - making it the preferred choice for industrial plasma and aerospace VOR where fault tolerance outweighs bandwidth or raw power density.
Availability
MRF1K50N-230MHZ is available at Aetrix Electronics and suitable for industrial plasma etching, weather radar transmitters, VHF broadcast amplifiers, and aerospace VOR beacons requiring stable component supply across extended product lifecycles.
Supply support for MRF1K50N-230MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power devices.
The MRF1K50N-230MHZ belongs to NXP's high-ruggedness RF LDMOS transistor family, designed specifically for mission-critical industrial, broadcast, and aerospace transmitters demanding extreme VSWR tolerance and thermal resilience.
FAQ
What is the maximum continuous drain current rating for the MRF1K50N-230MHZ?
The MRF1K50N-230MHZ does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by total device dissipation (2941 W at TC = 25°C, derated 14.71 W/°C above), junction temperature limit (+225°C), and case temperature range (–40°C to +150°C). Actual ID depends on bias point, thermal interface, and duty cycle - for example, at 230 MHz pulsed operation with IDQ(A+B) = 100 mA, peak ID exceeds 100 A.
Does the MRF1K50N-230MHZ require external gate resistors for stability?
Yes - the MRF1K50N-230MHZ requires external gate-stopper resistors (typically 1–5 Ω in series with each gate lead) to suppress VHF/UHF parasitic oscillations. NXP's 230 MHz narrowband test fixture uses PCB layout and matching networks to ensure unconditional stability, but discrete gate resistors are mandatory in production designs per AN1907 and EB212 guidelines.
Can the MRF1K50N-230MHZ be operated in Class AB mode?
Yes - the MRF1K50N-230MHZ is characterized for linear operation and supports Class AB biasing. Its gate threshold voltage (1.7–2.7 V) and quiescent gate voltage (1.9–2.9 V at IDQ = 100 mA) enable precise control of conduction angle. NXP's 87.5–108 MHz broadband reference circuit operates in Class AB, achieving 83.2% efficiency at 1421 W CW output.
What is the recommended heatsink interface material for the MRF1K50N-230MHZ?
NXP recommends either thermally conductive epoxy (e.g., Ablestik 5501) or high-performance thermal grease (e.g., Wakefield-Vette Sil-Pad 2000) between the exposed source (backside) of the MRF1K50N-230MHZ and copper heatsink. Solder attachment is also supported per AN1907, but requires strict reflow profile control to avoid package delamination.
Is the MRF1K50N-230MHZ pin-compatible with the MRF1K50GN variant?
No - the MRF1K50N-230MHZ (OM-1230-4L) and MRF1K50GN (OM-1230G-4L) share identical electrical specifications and pin functions, but differ in lead form: MRF1K50N has straight leads, while MRF1K50GN uses gull-wing leads. PCB footprints and reflow profiles must be adjusted accordingly; they are not drop-in replacements.
MRF1K50N-230MHZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- -
- Frequency:
- -
- Contents:
- Board(s)
- Utilized IC / Part:
- -
MRF1K50N-230MHZ FAQ
1.How can I place an order for MRF1K50N-230MHZ through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1K50N-230MHZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1K50N-230MHZ reliable?
The price and inventory of MRF1K50N-230MHZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1K50N-230MHZ is usually 5 days.
3.What payment methods are accepted for MRF1K50N-230MHZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1K50N-230MHZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1K50N-230MHZ?
MRF1K50N-230MHZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1K50N-230MHZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1K50N-230MHZ?
For technical support, including MRF1K50N-230MHZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1K50N-230MHZ requirements.
6.How does Aetrix verify that MRF1K50N-230MHZ is sourced from the original manufacturer or authorized distributors?
All MRF1K50N-230MHZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1K50N-230MHZ meets industry standards.
7.What is the process for return or replacement of MRF1K50N-230MHZ?
All MRF1K50N-230MHZ units undergo pre-shipment inspection (PSI). If there is an issue with MRF1K50N-230MHZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1K50N-230MHZ part is unused and in its original packaging.
Return procedure for MRF1K50N-230MHZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF1K50N-230MHZ Tags
-
113991054
Seeed Technology Co., Ltd
-
SC0918
Raspberry Pi
-
113991114
Seeed Technology Co., Ltd
-
ESP32-C6-DEVKITM-1-N4
Espressif Systems
-
ESP32-DEVKITM-1
Espressif Systems
-
C008
M5Stack Technology Co., Ltd.
-
ESP32-C3-DEVKITC-02
Espressif Systems
-
ESP32-C6-DEVKITC-1-N8
Espressif Systems
-
DFR0478
DFRobot
-
102010448
Seeed Technology Co., Ltd
-
ESP32-DEVKITC-32E
Espressif Systems
-
ESP32-DEVKITC-32UE
Espressif Systems
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
