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NXP Semiconductors MRF1K50N-TF1
- Part No.:
- MRF1K50N-TF1
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF1K50N-TF1.pdf
- Description:
- MRF1K50N REF BRD 108MHZ 1420W
- Quantity:
- Payment:
- Shipping:
Inventory:4,379
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Product details
Overview
MRF1K50N-TF1 from NXP Semiconductors is a high-ruggedness, 1500 W CW, 50 V RF power LDMOS transistor designed for broadband industrial, broadcast, aerospace, and mobile radio amplifiers operating from 1.8 to 500 MHz. It features dual-gate/dual-drain architecture, 23.1 dB power gain at 98 MHz, 83.2% drain efficiency, and >65:1 load VSWR tolerance at 230 MHz pulse operation.
For engineers reviewing the MRF1K50N-TF1 datasheet, MRF1K50N-TF1 pinout, MRF1K50N-TF1 application, or MRF1K50N-TF1 equivalent, key selection criteria include its 225°C max junction temperature, 0.068°C/W thermal resistance (CW), 133 V drain-source breakdown voltage, ESD Class 2 HBM rating, and suitability for single-ended or push-pull RF amplifier stages in high-VSWR environments.
Technical Context
This device is a lateral N-channel enhancement-mode LDMOS transistor with integrated ESD protection and a negative gate-source voltage range optimized for Class C operation. Its unmatched input/output impedance enables stable broadband matching across 1.8–500 MHz without external harmonic traps in many configurations.
The dual-gate/dual-drain structure supports balanced push-pull operation while maintaining independent characterization per side. Thermal performance is validated under heatsink-mounted conditions at TC = 80°C (CW) and TC = 75°C (pulse), with ruggedness verified at 50 VDD and 15 W peak input into >65:1 VSWR at all phase angles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–500 MHz - Enables single-device coverage of HF/VHF/UHF bands without retuning. |
| Output Power (CW) | 1500 W @ 98 MHz, 50 V - Delivers full-rated continuous RF output in broadcast and ISM heating applications. |
| Power Gain | 23.1 dB @ 98 MHz - Provides sufficient gain to reduce driver stage complexity in high-power amplifiers. |
| Drain Efficiency | 83.2% @ 98 MHz - Minimizes heat generation and DC power consumption in linear amplifier designs. |
| VSWR Tolerance | >65:1 @ 230 MHz pulse - Ensures reliable operation under severe mismatch in plasma etching or MRI systems. |
| Junction Temp Max | +225°C - Supports high-temperature PCB mounting and extended lifetime under thermal stress. |
| Thermal Resistance | 0.068°C/W (Junction-to-Case, CW) - Enables efficient heatsink coupling for sustained 1500 W dissipation. |
Pinout & Package
Package: OM-1230-4L plastic overmolded package with exposed source on backside; 4-terminal configuration optimized for RF grounding and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate A | Control electrode for first LDMOS cell | Enables independent biasing or balanced push-pull drive; requires low-inductance gate path. |
| 2 - Gate B | Control electrode for second LDMOS cell | Paired with Gate A for differential input; matched layout critical for symmetry in push-pull. |
| 3 - Drain A | High-current RF output terminal (Cell A) | Connected directly to heatsink via solder; carries up to 35.2 A DC/peak current. |
| 4 - Drain B | High-current RF output terminal (Cell B) | Electrically isolated but thermally coupled to Drain A; used for parallel or push-pull outputs. |
Key Features
| Feature | Design Value |
|---|---|
| High avalanche energy absorption | Withstands repeated drain-source voltage transients without degradation-critical for plasma ignition and radar pulse recovery. |
| Unmatched input/output impedance | Eliminates need for external broadband matching networks across 1.8–500 MHz, reducing PCB area and insertion loss. |
| Dual-gate/dual-drain architecture | Supports both single-ended and push-pull configurations without redesign; simplifies amplifier topology selection. |
| ESD protection (HBM Class 2) | Rated for 2500 V human-body-model discharge-enhances handling robustness and field reliability in production environments. |
| Characterized from 30–50 V VDD | Validated performance across wide supply range-enables flexible power supply design and improved efficiency tuning. |
Applications
| Industrial Heating Systems | Radio Broadcast Transmitters |
|---|---|
Use Scenario: High-power RF energy delivery to industrial loads for drying, welding, and curing processes. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1500 W CW into variable impedance loads. Use Value: >65:1 VSWR tolerance ensures uninterrupted operation during load fluctuations in conveyor-based heating systems. | Use Scenario: AM/FM broadcast transmitter final amplifier operating in 87.5–108 MHz band. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power stage driving antenna feedline. Use Value: 83.2% drain efficiency at 1421 W output reduces cooling requirements and AC power draw in 24/7 broadcast facilities. |
| VHF Radar Systems | MRI RF Power Amplifiers |
Use Scenario: Pulsed VHF weather or navigation radar transmitter requiring high peak power and thermal resilience. IC Role / Device Role / Timing Role: Pulse-mode RF power amplifier generating 1500 W peak at 230 MHz with 100 μs pulse width. Use Value: 0.015°C/W thermal impedance enables rapid heat extraction during high-duty-cycle radar bursts. | Use Scenario: MRI body coil excitation amplifier demanding high linearity, stability, and fault tolerance. IC Role / Device Role / Timing Role: Linear RF power stage delivering precisely controlled 1–500 MHz excitation signals. Use Value: Integrated ESD protection and –6 V to +10 V gate rating improve immunity to patient-coupled transients in clinical environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1K50GN | Gull-wing leadform variant of same die; identical electrical specs and thermal ratings. | Designed for surface-mount assembly with formed leads; requires different footprint and reflow profile. | Select MRF1K50GN for automated SMT lines where gull-wing mounting is preferred over straight-lead through-hole. |
| MRFE6VP61K25H | Higher 2200 W CW rating, 65 V VDD max, and 0.055°C/W RθJC; otherwise similar frequency range and ruggedness. | Better suited for next-generation broadcast or aerospace systems requiring higher headroom and lower thermal resistance. | Choose MRFE6VP61K25H when upgrading legacy MRF1K50N-TF1 designs for increased output or improved thermal margin. |
Compared with MRF1K50N-TF1, MRF1K50GN offers identical RF performance in a gull-wing package for SMT compatibility, while MRFE6VP61K25H delivers higher power and lower thermal resistance for future-proofed amplifier designs-neither is pin-compatible, requiring layout revision.
Availability
MRF1K50N-TF1 is available at Aetrix Electronics and suitable for industrial heating systems, broadcast transmitters, VHF radar, and MRI RF power amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for MRF1K50N-TF1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, automotive, and secure connectivity solutions, with deep expertise in power management and analog signal processing.
The MRF1K50N-TF1 belongs to NXP's high-ruggedness RF power LDMOS family, engineered specifically for mission-critical broadband amplification in industrial, broadcast, aerospace, and medical systems where reliability under extreme VSWR is mandatory.
FAQ
What is the maximum continuous drain current rating for the MRF1K50N-TF1?
The MRF1K50N-TF1 does not specify a maximum continuous drain current in absolute terms; instead, it is characterized by total device dissipation (2941 W @ TC = 25°C) and junction temperature limits (+225°C). At 50 VDD and 1500 W CW output, typical quiescent current is 200 mA per gate (IDQ(A+B) = 200 mA), and peak pulsed current reaches 35.2 A. Designers must calculate actual current based on operating point, thermal interface, and heatsink capability to stay within TJ and PD limits. The MRF1K50N-TF1 datasheet provides thermal impedance and efficiency curves to support this analysis.
Does the MRF1K50N-TF1 require external gate protection diodes?
No, the MRF1K50N-TF1 integrates ESD protection rated to Class 2 HBM (2500 V) and Class C3 CDM (2000 V), and features an extended negative gate-source voltage range (–6.0 V) to support robust Class C operation. External gate protection diodes are not required for standard handling or circuit operation, though proper RF layout practices-including short, low-inductance gate traces and local bypassing-remain essential. The MRF1K50N-TF1 datasheet confirms this in Table 3 and the Features section.
Can the MRF1K50N-TF1 be operated safely at 30 V drain supply?
Yes, the MRF1K50N-TF1 is explicitly characterized from 30 V to 50 V VDD, with functional test data provided across that range. At 30 V, output power and efficiency decrease predictably-e.g., Figure 17 shows Gps dropping from ~25 dB at 50 V to ~22 dB at 30 V under identical conditions-but the device remains fully functional and safe within its absolute maximum ratings (VDSS = +133 V). This flexibility allows designers to optimize trade-offs between efficiency, linearity, and thermal load in the MRF1K50N-TF1 application.
What is the recommended driver device for the MRF1K50N-TF1?
The official NXP documentation recommends the MRFE6VS25N (25 W RF power transistor) as the optimal driver for the MRF1K50N-TF1. This pairing is validated in reference designs and ensures appropriate gain staging, impedance matching, and thermal compatibility. The MRFE6VS25N delivers sufficient drive power to fully saturate the MRF1K50N-TF1's gates while maintaining linearity and stability across the 1.8–500 MHz band. Using the MRF1K50N-TF1 with its recommended driver simplifies system-level validation and improves time-to-market.
Is the MRF1K50N-TF1 suitable for Class AB linear amplifier operation?
Yes, the MRF1K50N-TF1 is explicitly specified for linear applications and characterized with quiescent current settings (e.g., IDQ(A+B) = 100–200 mA) that support Class AB operation. Its high linearity, low distortion, and stable gain across frequency make it appropriate for FM broadcast, digital TV, and other applications requiring spectral purity. The MRF1K50N-TF1 datasheet includes harmonic measurements (Figure 11) and intermodulation data confirming linear behavior, and notes "Suitable for linear application" in the Features list.
MRF1K50N-TF1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Transistor
- Frequency:
- 87.5MHz ~ 108MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRF1K50N
MRF1K50N-TF1 FAQ
1.How can I place an order for MRF1K50N-TF1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF1K50N-TF1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF1K50N-TF1 reliable?
The price and inventory of MRF1K50N-TF1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF1K50N-TF1 is usually 5 days.
3.What payment methods are accepted for MRF1K50N-TF1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF1K50N-TF1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF1K50N-TF1?
MRF1K50N-TF1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF1K50N-TF1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF1K50N-TF1?
For technical support, including MRF1K50N-TF1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF1K50N-TF1 requirements.
6.How does Aetrix verify that MRF1K50N-TF1 is sourced from the original manufacturer or authorized distributors?
All MRF1K50N-TF1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF1K50N-TF1 meets industry standards.
7.What is the process for return or replacement of MRF1K50N-TF1?
All MRF1K50N-TF1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF1K50N-TF1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF1K50N-TF1 part is unused and in its original packaging.
Return procedure for MRF1K50N-TF1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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