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NXP Semiconductors MRF24G300HS-2UP
- Part No.:
- MRF24G300HS-2UP
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-4L
- Datasheet:
-
MRF24G300HS-2UP.pdf
- Description:
- RF MOSFET GAN 48V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:6,195
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Product details
Overview
MRF24G300HS-2UP from NXP Semiconductors is a 300 W CW GaN-on-SiC RF power transistor designed for industrial, scientific, and medical (ISM) applications at 2400–2500 MHz. It delivers 332 W output power, 15.2 dB power gain, and 73.0% drain efficiency at 2450 MHz under 48 Vdc bias and –5 Vdc gate voltage, operating in continuous-wave mode for microwave ablation and plasma generation systems.
For engineers reviewing the MRF24G300HS-2UP datasheet, MRF24G300HS-2UP pinout, MRF24G300HS-2UP application, or MRF24G300HS-2UP equivalent, this page provides verified thermal resistance (RθJC = 0.52 °C/W), ruggedness to >20:1 VSWR, ESD robustness (HBM Class 1B, CDM Class 3), and confirmed NI-780S-4L package mapping - all critical for high-reliability RF amplifier design.
Technical Context
This dual-gate GaN HEMT operates in depletion mode with VGS(th) = –3.16 V (typ), qualified for 0–55 VDD, and supports single-ended or push-pull configurations. Its source terminal is the package backside, requiring direct thermal mounting to heatsink.
The device is characterized across 2400–2500 MHz with guaranteed performance only within that band. Input matching simplifies circuit design, while thermal resistance data (RθJC = 0.52 °C/W, RθCHC = 0.72 °C/W) enables accurate channel temperature estimation per MTTF model A = –10.3, B = 8263.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2400–2500 MHz - Guaranteed performance only within this ISM band; no specification outside. |
| Output Power (POUT) | 332 W CW at 2450 MHz - Enables high-power industrial heating without derating in reference circuit. |
| Power Gain (Gps) | 15.2 dB at 2450 MHz - Reduces driver stage complexity and improves system-level efficiency. |
| Drain Efficiency (ηD) | 73.0% at 2450 MHz - Lowers thermal load and heatsink requirements in sustained CW operation. |
| Thermal Resistance (RθJC) | 0.52 °C/W - Enables precise junction-to-case thermal modeling for reliability-critical medical ablation systems. |
| VSWR Ruggedness | >20:1 at all phase angles, 2450 MHz pulse - Supports unmatched loads in plasma ignition without degradation. |
| ESD Rating | HBM Class 1B (900 V), CDM Class 3 (1200 V) - Ensures handling robustness during assembly of RF power modules. |
Pinout & Package
Package: NI-780S-4L - Air-cavity ceramic/metal flange package with source-connected backside for direct heatsink mounting. Dimensions per NXP drawing; requires controlled reflow per AN1908.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Pin 3) | RF Power Output Terminal (Side A) | Carries high-current RF output; must be impedance-matched to 2.55 – j2.72 Ω at 2450 MHz. |
| Drain B (Pin 1) | RF Power Output Terminal (Side B) | Parallel drain path enabling push-pull configuration; tied internally or externally per layout. |
| Gate A (Pin 4) | Control Input (Side A) | Depletion-mode gate requiring –5 Vdc bias; connected to external gate network for stability. |
| Gate B (Pin 2) | Control Input (Side B) | Independent gate control for dual-side operation; matched to Gate A for balanced drive. |
| Backside | Source Terminal | Common source node for both transistors; electrically and thermally connected to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced GaN-on-SiC technology | Enables 350 °C max channel temperature and superior thermal conductivity vs. GaN-on-Si. |
| Input-matched architecture | Reduces external matching components; Zsource = 2.55 – j2.72 Ω at 2450 MHz simplifies PCB layout. |
| Single-ended or push-pull support | Allows flexible amplifier topology selection without redesigning core RF stage. |
| 55 V operating voltage rating | Supports 48 Vdc nominal supply with margin for transient overvoltage in industrial environments. |
| Characterized for CW and long-pulse | Validated for seconds-long pulses and continuous operation - critical for diathermy and welding. |
Applications
| Industrial Heating | Plasma Generation |
|---|---|
|
Use Scenario: High-efficiency dielectric heating of plastics and composites in manufacturing lines. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 300 W CW at 2450 MHz into tuned cavity load. Use Value: 73.0% drain efficiency minimizes cooling infrastructure cost and energy consumption in 24/7 production. |
Use Scenario: Ignition and sustainment of atmospheric-pressure plasma for surface treatment. IC Role / Device Role / Timing Role: High-ruggedness RF power switch capable of surviving >20:1 VSWR during plasma arc formation. Use Value: Confirmed no degradation under 2450 MHz pulse stress (100 µs, 20% duty cycle) ensures process repeatability. |
| Medical Microwave Ablation | Scientific Instrumentation |
|
Use Scenario: Precision tumor ablation using focused 2450 MHz RF energy delivered via coaxial antenna. IC Role / Device Role / Timing Role: Stable CW RF source with tightly controlled POUT (±3 W across 2400–2500 MHz) for calibrated thermal dose delivery. Use Value: 0.52 °C/W RθJC enables real-time thermal modeling to prevent collateral tissue damage. |
Use Scenario: High-stability RF excitation in electron spin resonance (ESR) spectrometers. IC Role / Device Role / Timing Role: Low-phase-noise, high-linearity amplifier supporting narrowband signal fidelity at 2450 MHz. Use Value: Characterized linear operation and 15.2 dB gain ensure SNR preservation in low-power detection circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF24G300H | Same die, NI-780H-4L package (56 mm tape width); identical electrical specs but larger footprint and different thermal interface geometry. | Preferred where board space allows larger flange and higher-volume tape-and-reel logistics apply. | Select MRF24G300H only if NI-780H-4L mechanical fit and 56 mm tape compatibility are required. |
| CGHV14800F | GaN-on-SiC, 800 W, 1.2–1.4 GHz - higher power but incompatible frequency range; not usable at 2450 MHz. | Applicable only in L-band radar or communications; cannot replace MRF24G300HS-2UP in ISM-band systems. | Not a functional alternative for 2450 MHz applications; consider only for lower-frequency, higher-power designs. |
Compared with MRF24G300H, the MRF24G300HS-2UP offers identical RF performance but optimized NI-780S-4L packaging for tighter board layouts and 32 mm tape handling; CGHV14800F operates outside the 2400–2500 MHz band and cannot serve as a drop-in replacement.
Availability
MRF24G300HS-2UP is available at Aetrix Electronics and suitable for industrial heating, plasma generation, microwave ablation, and scientific instrumentation requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for MRF24G300HS-2UP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, automotive radar, RF power, and edge processing ICs.
The MRF24G300HS-2UP belongs to NXP's high-power GaN transistor product line, engineered specifically for demanding ISM-band applications requiring high efficiency, ruggedness, and thermal reliability in medical, industrial, and scientific RF systems.
FAQ
What is the maximum operating voltage for the MRF24G300HS-2UP?
The MRF24G300HS-2UP has a maximum operating voltage (VDD) of +55 Vdc, with absolute maximum drain-source voltage (VDSS) rated at 125 Vdc. Operation at 48 Vdc is standard in its reference circuit, and the device is qualified up to 55 Vdc for transient margin in industrial environments. Exceeding 55 Vdc risks permanent damage.
Does the MRF24G300HS-2UP require external input matching?
No - the MRF24G300HS-2UP features an input-matched architecture with Zsource = 2.55 – j2.72 Ω at 2450 MHz, significantly reducing external matching complexity. However, fine-tuning may still be needed depending on PCB parasitics and system-level impedance tolerances; NXP provides full S-parameter files for simulation.
Is the MRF24G300HS-2UP suitable for pulsed RF applications?
Yes - the MRF24G300HS-2UP is fully characterized for long-pulse (up to several seconds) and short-pulse (e.g., 100 µs, 20% duty cycle) operation. It demonstrates no degradation under 2450 MHz pulse testing at >20:1 VSWR, making it appropriate for radar simulators and pulsed plasma systems.
How is thermal management implemented for the MRF24G300HS-2UP?
Thermal management relies on direct mounting of the package backside (source terminal) to a heatsink using controlled reflow per AN1908. With RθJC = 0.52 °C/W, case temperature must be maintained ≤125 °C to ensure 350 °C channel limit compliance; MTTF modeling uses TCH = 350 °C with coefficients A = –10.3, B = 8263.
What is the gate bias sequence for safe turn-on/turn-off of the MRF24G300HS-2UP?
Per NXP's documented procedure: To turn ON, first set VGS(A+B) to –5 Vdc, then apply VDS to 48 Vdc, adjust gate voltage for desired IDS, then apply RF. To turn OFF: remove RF, reduce VGS to –5 Vdc, reduce VDS to 0 V (allowing full discharge time), then disable VGS. Violating this sequence risks catastrophic failure.
MRF24G300HS-2UP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-4L
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- GaN
- Configuration:
- -
- Frequency:
- 2.4GHz ~ 2.5GHz
- Gain:
- 15.3dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 336W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-780S-4L
MRF24G300HS-2UP FAQ
1.How can I place an order for MRF24G300HS-2UP through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF24G300HS-2UP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF24G300HS-2UP reliable?
The price and inventory of MRF24G300HS-2UP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF24G300HS-2UP is usually 5 days.
3.What payment methods are accepted for MRF24G300HS-2UP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF24G300HS-2UP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF24G300HS-2UP?
MRF24G300HS-2UP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF24G300HS-2UP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF24G300HS-2UP?
For technical support, including MRF24G300HS-2UP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF24G300HS-2UP requirements.
6.How does Aetrix verify that MRF24G300HS-2UP is sourced from the original manufacturer or authorized distributors?
All MRF24G300HS-2UP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF24G300HS-2UP meets industry standards.
7.What is the process for return or replacement of MRF24G300HS-2UP?
All MRF24G300HS-2UP units undergo pre-shipment inspection (PSI). If there is an issue with MRF24G300HS-2UP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF24G300HS-2UP part is unused and in its original packaging.
Return procedure for MRF24G300HS-2UP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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