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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF24G300HSR5

Name: MRF24G300HSR5
Brand: NXP Semiconductors
SKU: MRF24G300HSR5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF24G300HSR5

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: NI-780S-4L

Datasheet:: MRF24G300HSR5.pdf

Description:: RF MOSFET GAN 48V NI780

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF24G300HSR5 from NXP Semiconductors is a 300 W CW GaN-on-SiC RF power transistor designed for industrial, scientific, and medical (ISM) applications at 2400–2500 MHz. It delivers 332 W output power, 15.2 dB power gain, and 73.0% drain efficiency at 2450 MHz under 48 Vdc bias with –5 Vdc gate drive, operating in CW, pulse, or linear modes.

For engineers reviewing the MRF24G300HSR5 datasheet, MRF24G300HSR5 pinout, MRF24G300HSR5 application, or MRF24G300HSR5 equivalent, key selection considerations include its 125 Vds rating, –3.16 V threshold voltage, rugged >20:1 load mismatch tolerance at 2450 MHz pulse, thermal resistance of 0.52 °C/W (IR), and NI-780S-4L package compatibility.

Technical Context

This dual-gate GaN HEMT operates in depletion mode and requires precise bias sequencing: gate set to –5 V before applying 48 Vdc drain voltage. It supports both single-ended and push-pull configurations, with input matching integrated to simplify circuit design.

Thermal performance is enabled by SiC substrate and direct-source-to-heatsink mounting (backside source terminal). Reliability modeling uses channel temperature (T_CH ≤ 350 °C) and finite-element thermal resistance R_θCHC = 0.72 °C/W for MTTF estimation per JEDEC JEP150.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2400–2500 MHz - guaranteed performance band for ISM systems; no specification outside this range
Output Power (CW)	332 W @ 2450 MHz - enables high-power microwave ablation and plasma generation without derating
Drain Efficiency	73.0% @ 2450 MHz - reduces heatsink size and cooling requirements in sealed industrial enclosures
Power Gain	15.2 dB @ 2450 MHz - allows lower-drive-stage complexity in multi-stage amplifier designs
V_DSS Rating	125 Vdc - supports safe operation with 48 Vdc supply and transient overvoltage margins
R_θJC (IR)	0.52 °C/W - enables stable 300 W CW operation with case temperature ≤ 125 °C using standard copper heatsinks
V_GS(th)	–3.16 V (typ) - defines gate bias window for Class AB linear operation with predictable quiescent current

Pinout & Package

The MRF24G300HSR5 is housed in the NI-780S-4L air-cavity ceramic package (4-lead, flanged), with the backside metallization serving as the common source terminal. Mounting requires solder reflow per AN1908 for thermal integrity.

Pin/Terminal	Circuit Role	Design Meaning
Drain A (Pin 1)	RF power output terminal (Side A)	Carries half the total RF output current; used independently or paralleled with Drain B in push-pull
Gate A (Pin 2)	Control electrode (Side A)	Accepts –5 Vdc bias; must be sequenced before V_DS to prevent device damage
Drain B (Pin 3)	RF power output terminal (Side B)	Electrically identical to Drain A; enables balanced output or redundancy in critical systems
Gate B (Pin 4)	Control electrode (Side B)	Independent gate control allows asymmetric biasing or fault-isolated operation

Key Features

Feature	Design Value
GaN-on-SiC technology	Enables 350 °C maximum channel temperature and superior thermal conductivity vs. GaN-on-Si
Input-matched design	Eliminates external input matching network in reference circuit, reducing PCB area and tuning time
Load mismatch ruggedness	Survives >20:1 VSWR at all phase angles during 100 µs pulses - critical for plasma ignition stability
Qualified to 55 V_DD	Supports headroom for transient surges in industrial 48 V power rails without derating
ESD robustness	HBM Class 1B (900 V), CDM Class 3 (1200 V) - reduces handling sensitivity in automated assembly

Applications

Industrial Heating	Plasma Generation
Use Scenario: Continuous-wave microwave energy delivery into dielectric materials for uniform volumetric heating in food processing or rubber vulcanization. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 300 W at 2450 MHz into magnetron-coupled cavity. Use Value: 73.0% drain efficiency minimizes cooling infrastructure cost and improves system energy conversion ratio.	Use Scenario: Sustained RF excitation of low-pressure gas to generate stable, high-density plasma for semiconductor etching or surface treatment. IC Role / Device Role / Timing Role: High-ruggedness RF driver maintaining stable output despite dynamic plasma impedance shifts. Use Value: >20:1 load mismatch tolerance ensures uninterrupted operation during plasma ignition transients.
Medical Microwave Ablation	RF Welding & Heat Sealing
Use Scenario: Precise, controllable thermal lesion creation in soft tissue using interstitial antennas operating at 2450 MHz. IC Role / Device Role / Timing Role: Linear-mode RF power stage enabling amplitude-modulated output for real-time power titration. Use Value: –3.16 V threshold voltage and Class AB bias support accurate, repeatable power control across patient-specific tissue loads.	Use Scenario: High-duty-cycle RF energy application to thermoplastic interfaces for hermetic sealing in packaging or automotive components. IC Role / Device Role / Timing Role: CW amplifier driving resonant applicator with tight thermal management constraints. Use Value: 0.52 °C/W thermal resistance allows sustained 300 W output on compact heatsinks compatible with inline production machinery.

Industrial Heating

Plasma Generation

Use Scenario: Continuous-wave microwave energy delivery into dielectric materials for uniform volumetric heating in food processing or rubber vulcanization.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 300 W at 2450 MHz into magnetron-coupled cavity.

Use Value: 73.0% drain efficiency minimizes cooling infrastructure cost and improves system energy conversion ratio.

Use Scenario: Sustained RF excitation of low-pressure gas to generate stable, high-density plasma for semiconductor etching or surface treatment.

IC Role / Device Role / Timing Role: High-ruggedness RF driver maintaining stable output despite dynamic plasma impedance shifts.

Use Value: >20:1 load mismatch tolerance ensures uninterrupted operation during plasma ignition transients.

Medical Microwave Ablation

RF Welding & Heat Sealing

Use Scenario: Precise, controllable thermal lesion creation in soft tissue using interstitial antennas operating at 2450 MHz.

IC Role / Device Role / Timing Role: Linear-mode RF power stage enabling amplitude-modulated output for real-time power titration.

Use Value: –3.16 V threshold voltage and Class AB bias support accurate, repeatable power control across patient-specific tissue loads.

Use Scenario: High-duty-cycle RF energy application to thermoplastic interfaces for hermetic sealing in packaging or automotive components.

IC Role / Device Role / Timing Role: CW amplifier driving resonant applicator with tight thermal management constraints.

Use Value: 0.52 °C/W thermal resistance allows sustained 300 W output on compact heatsinks compatible with inline production machinery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CGHV1F006S	600 W rated, 2400–2500 MHz, GaN-on-SiC, but requires external input matching and has higher V_GS(th) (–4.5 V)	Higher power capability suits larger plasma chambers; less suitable for space-constrained ablation generators	Select when >300 W output is required and board area permits matching network implementation
MRF24G300HR5	Same die, NI-780H-4L package (56 mm tape width, wider flange); identical electrical specs and thermal resistance	Designed for high-volume automated placement requiring wider carrier tape; same thermal interface	Select for SMT lines using 56 mm tape; otherwise MRF24G300HSR5 (32 mm tape) offers tighter reel logistics

Compared with CGHV1F006S and MRF24G300HR5, the MRF24G300HSR5 provides optimal balance of integrated input matching, compact 32 mm tape logistics, and proven 300 W reliability in ISM-class medical and industrial systems - without requiring layout redesign or additional matching components.

Availability

MRF24G300HSR5 is available at Aetrix Electronics and suitable for industrial heating, plasma generation, medical microwave ablation, and RF welding applications requiring stable component supply, long-lifecycle assurance, and traceable GaN transistor sourcing.

Supply support for MRF24G300HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in RF power technologies since the Philips era.

The MRF24G300HSR5 belongs to NXP's high-power GaN transistor product line, engineered specifically for rugged, high-efficiency 2.45 GHz ISM-band systems where thermal resilience, load tolerance, and long-term reliability are non-negotiable.

FAQ

What is the correct bias sequence for safe operation of the MRF24G300HSR5?

The MRF24G300HSR5 requires strict gate-first bias sequencing: apply –5 Vdc to both gates before enabling 48 Vdc drain voltage. To turn off, remove RF input first, then return gates to –5 Vdc, reduce drain voltage to zero, and finally disable gate bias. Failure to follow this sequence risks catastrophic device failure due to GaN depletion-mode characteristics.

Does the MRF24G300HSR5 require external input matching in standard applications?

No - the MRF24G300HSR5 is input-matched per its reference circuit (5.0 cm × 7.0 cm Rogers RT6035HTC PCB). In the specified 2400–2500 MHz band with 48 Vdc/–5 Vdc bias, no external input matching network is needed, simplifying layout and reducing insertion loss versus unmatched alternatives like CGHV1F006S.

What thermal interface method is recommended for the MRF24G300HSR5?

NXP specifies solder reflow attachment per Application Note AN1908 for the MRF24G300HSR5. The backside source terminal must be soldered directly to a copper heatsink using Pb-free solder and controlled thermal profile to maintain R_θJC = 0.52 °C/W. Thermal grease or mechanical clamping is not qualified and degrades reliability.

Can the MRF24G300HSR5 be used in push-pull configuration?

Yes - the MRF24G300HSR5 supports both single-ended and push-pull configurations. Its dual independent gates (Gate A/Gate B) and drains (Drain A/Drain B) allow symmetrical drive for improved harmonic suppression and power combining, as validated in NXP's reference design documentation.

Is the MRF24G300HSR5 suitable for linear RF applications such as medical ablation?

Yes - the MRF24G300HSR5 is characterized for linear operation with Class AB biasing. Its –3.16 V typical threshold voltage and stable gain flatness across 2400–2500 MHz enable precise amplitude modulation required in microwave ablation systems, as confirmed in Table 6 and Figure 4 of the official datasheet.

MRF24G300HSR5 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: NI-780S-4L

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: GaN

Configuration:: 2 N-Channel (Dual)

Frequency:: 2.4GHz ~ 2.5GHz

Gain:: 15.3dB

Voltage - Test:: 48 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: -

Power - Output:: 300W

Voltage - Rated:: 125 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: NI-780S-4L

MRF24G300HSR5 FAQ

1.How can I place an order for MRF24G300HSR5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF24G300HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF24G300HSR5 reliable?

The price and inventory of MRF24G300HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF24G300HSR5 is usually 5 days.

3.What payment methods are accepted for MRF24G300HSR5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF24G300HSR5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF24G300HSR5?

MRF24G300HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF24G300HSR5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF24G300HSR5?

For technical support, including MRF24G300HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF24G300HSR5 requirements.

6.How does Aetrix verify that MRF24G300HSR5 is sourced from the original manufacturer or authorized distributors?

All MRF24G300HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF24G300HSR5 meets industry standards.

7.What is the process for return or replacement of MRF24G300HSR5?

All MRF24G300HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF24G300HSR5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF24G300HSR5 part is unused and in its original packaging.

Return procedure for MRF24G300HSR5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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