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NXP Semiconductors MRF281SR1
- Part No.:
- MRF281SR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-200S
- Datasheet:
-
MRF281SR1.pdf
- Description:
- RF MOSFET LDMOS 26V NI200
- Quantity:
- Payment:
- Shipping:
Inventory:5,089
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Product details
Overview
MRF281SR1 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for Class A/AB operation in 1930–1990 MHz base station amplifiers at 26 V. It delivers 4 W PEP output power with 11 dB power gain and 30% drain efficiency, optimized for digital and analog cellular PCN/PCS infrastructure applications.
For engineers reviewing the MRF281SR1 datasheet, MRF281SR1 pinout, MRF281SR1 application, or MRF281SR1 equivalent, key selection criteria include its 26 V DC bias capability, 10:1 VSWR ruggedness at 2000 MHz, -29 dBc two-tone IMD performance, thermal resistance of 5.74 °C/W, and NI-200S package with defined drain/gate/source terminal mapping.
Technical Context
This device operates as a common-source broadband RF amplifier with characterized S-parameters up to 2.6 GHz at high bias (ID = 250 mA), supporting stable gain and input return loss down to -16 dB at 1930 MHz. Its series-equivalent large-signal impedance (Zin = 3.1 + j0.9 Ω, ZOL* = 12.8 – j10.1 Ω at 1900 MHz) enables precise matching network design for 25 Ω systems.
Thermal management is critical: junction-to-case thermal resistance is 5.74 °C/W, maximum case temperature is 150 °C, and operating junction temperature reaches 200 °C. The device is rated for ±20 V gate-source voltage and withstands 10:1 VSWR under 4 W CW at 2000 MHz without damage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1930–1990 MHz - specified operating band for 4 W PEP output and linear two-tone performance |
| Output Power (PEP) | 4 W - usable peak envelope power in digital modulation schemes like CDMA and OFDMA |
| Power Gain | 11 dB typical - sufficient gain per stage to minimize cascaded amplifier count in macrocell PA designs |
| Drain Efficiency | 30% typical at 4 W PEP - defines DC-to-RF conversion efficiency under real-world modulated signal conditions |
| Intermodulation Distortion | –29 dBc typical - quantifies third-order distortion level critical for adjacent channel leakage ratio (ACLR) compliance |
| VSWR Tolerance | 10:1 @ 2000 MHz, 4 W CW - indicates robustness against antenna mismatch and system-level impedance variations |
| Thermal Resistance (RθJC) | 5.74 °C/W - determines heatsink requirements for maintaining TC ≤ 150 °C at full power |
Pinout & Package
Package: NI-200S (Case 458B-03, Style 1), hermetically sealed ceramic/metal flange-mount package with coplanar leads and integral heat slug. Designed for high-frequency RF grounding via flange soldering to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-power RF output node | Connected to output matching network and heatsink; carries full RF current and DC supply (26 V) |
| 2. Gate | RF input control terminal | Bias-controlled terminal requiring stable DC quiescent voltage (3–5 V) and RF input matching network |
| 3. Source | RF and DC reference node | DC return path and RF ground reference; connected directly to low-inductance ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Two-tone IMD characterization | –29 dBc at 1930 MHz - enables direct ACLR validation without additional test fixtures |
| Series-equivalent large-signal impedance data | Zin and ZOL* provided across 1500–2000 MHz - eliminates need for on-wafer de-embedding in PA matching design |
| High-bias S-parameter dataset | S-parameters measured at ID = 250 mA - supports accurate nonlinear simulation and stability analysis |
| 10:1 VSWR ruggedness | Rated at 2000 MHz, 4 W CW - allows deployment in uncontrolled antenna environments without external circulators |
| RoHS-compliant packaging | Tape-and-reel (R1 suffix = 500 units per 12 mm, 7-inch reel) - supports automated SMT assembly |
Applications
| Cellular Base Station Transmitter | PCN/PCS Macrocell Amplifier |
|---|---|
Use Scenario: Final-stage RF power amplification in 1900 MHz PCS band base stations handling multi-carrier CDMA signals. IC Role / Device Role / Timing Role: High-efficiency, linear RF power transistor operating in Class AB mode with 26 V DC supply. Use Value: Delivers 4 W PEP with –29 dBc IMD, meeting FCC Part 24 spectral mask requirements without digital pre-distortion overhead. | Use Scenario: Driver or final-stage amplifier in outdoor macrocell sites serving dense urban coverage zones. IC Role / Device Role / Timing Role: Lateral N-channel MOSFET configured as common-source amplifier with fixed 25 mA quiescent bias. Use Value: 10:1 VSWR tolerance ensures operational reliability despite seasonal antenna detuning or connector degradation. |
| RF Test Fixture Amplifier | Industrial RF Heating Driver |
Use Scenario: Benchtop broadband amplifier in lab-grade two-tone intermodulation test setups. IC Role / Device Role / Timing Role: Characterized RF power device with published Zin/ZOL* and S-parameters for fixture calibration. Use Value: Enables repeatable –29 dBc IMD measurements at 1930 MHz using standard 50 Ω test equipment without custom de-embedding. | Use Scenario: Medium-power RF driver in 1900–2000 MHz industrial heating systems requiring stable CW output. IC Role / Device Role / Timing Role: Fixed-bias RF power transistor delivering 4 W continuous output into matched load. Use Value: 5.74 °C/W RθJC and 150 °C max case temperature support forced-air-cooled enclosure integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF281ZR1 | Different package: NI-200Z (Case 458C-03) with modified lid geometry and coplanarity spec (H ≤ 0.004″); identical electrical specs and bias conditions | Same frequency band and power class, but requires updated PCB footprint and thermal interface design due to lid height and flange contour differences | Select MRF281ZR1 only when redesigning for improved thermal interface or revised mechanical mounting constraints |
| PD55003-E | Higher gain (14 dB typ), lower IMD (–33 dBc), but narrower bandwidth (1805–1880 MHz only); same 4 W PEP, 26 V, NI-200S package | Optimized for GSM1800 infrastructure; not validated for 1930–1990 MHz PCS band operation per datasheet | Choose PD55003-E only for GSM1800 deployments where higher linearity and gain justify reduced frequency flexibility |
Compared with MRF281ZR1, the MRF281SR1 offers identical RF performance but requires legacy NI-200S footprint compatibility; versus PD55003-E, it trades 3 dB gain and 4 dBc IMD improvement for guaranteed 1930–1990 MHz operation and broader two-tone bandwidth support.
Availability
MRF281SR1 is available at Aetrix Electronics and suitable for cellular infrastructure, RF test equipment, and industrial heating applications requiring stable component supply and documented RF power performance at 1930–1990 MHz.
Supply support for MRF281SR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor was a global semiconductor company specializing in RF power, microcontrollers, and analog solutions before its acquisition by NXP in 2015. It pioneered high-voltage LDMOS technology for wireless infrastructure.
The MRF281SR1 belongs to Freescale's MRF281 family of lateral N-channel RF power MOSFETs, engineered specifically for linear, high-efficiency amplification in 1–2.5 GHz cellular base station transmitters.
FAQ
What is the maximum drain-source voltage rating for the MRF281SR1?
The MRF281SR1 has a maximum drain-source voltage rating of +65 Vdc, with a minimum rating of –0.5 Vdc. This specification ensures safe operation under transient voltage spikes and reverse-bias conditions in RF amplifier circuits. The MRF281SR1 must never be operated beyond this limit to prevent catastrophic failure. Absolute maximum ratings assume TC = 25°C and are not intended for continuous operation.
Does the MRF281SR1 require external gate protection diodes?
Yes, the MRF281SR1 requires external gate protection due to its sensitivity to electrostatic discharge (ESD). The datasheet explicitly cautions that MOS devices are susceptible to ESD damage, and reasonable precautions-including gate-limiting resistors and TVS diodes-must be observed during handling and circuit operation. The MRF281SR1 gate-source leakage is rated at ≤1 μAdc at 20 Vdc, confirming vulnerability to overvoltage stress.
What is the gate threshold voltage range for the MRF281SR1?
The MRF281SR1 has a gate threshold voltage (VGS(th)) range of 2.4 Vdc to 4.0 Vdc, measured at VDS = 10 Vdc and ID = 20 μAdc. This parameter defines the minimum gate voltage required to initiate conduction and is critical for setting stable Class AB quiescent current. The MRF281SR1's typical VGS(q) of 4.1 Vdc at IDQ = 25 mA confirms practical bias point alignment within this threshold window.
Can the MRF281SR1 be used in Class C amplifier configurations?
No, the MRF281SR1 is characterized and specified only for Class A and Class AB operation per its official Freescale documentation. Its two-tone IMD, efficiency, and thermal derating curves are validated exclusively under those bias conditions. Using the MRF281SR1 in Class C would violate its documented operating envelope and likely result in excessive distortion, thermal runaway, or premature failure.
What does the "R1" suffix indicate in MRF281SR1?
The "R1" suffix in MRF281SR1 denotes tape-and-reel packaging: 500 units per 12 mm wide, 7-inch diameter reel. This format is optimized for automated surface-mount assembly and aligns with industry-standard SMT feeder compatibility. The MRF281SR1 shares identical electrical and thermal specifications with the MRF281ZR1 variant, differing only in package outline (NI-200S vs. NI-200Z) and reel configuration.
MRF281SR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-200S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.93GHz
- Gain:
- 12.5dB
- Voltage - Test:
- 26 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 25 mA
- Power - Output:
- 4W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-200S
MRF281SR1 FAQ
1.How can I place an order for MRF281SR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF281SR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF281SR1 reliable?
The price and inventory of MRF281SR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF281SR1 is usually 5 days.
3.What payment methods are accepted for MRF281SR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF281SR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF281SR1?
MRF281SR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF281SR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF281SR1?
For technical support, including MRF281SR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF281SR1 requirements.
6.How does Aetrix verify that MRF281SR1 is sourced from the original manufacturer or authorized distributors?
All MRF281SR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF281SR1 meets industry standards.
7.What is the process for return or replacement of MRF281SR1?
All MRF281SR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF281SR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF281SR1 part is unused and in its original packaging.
Return procedure for MRF281SR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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