NXP Semiconductors MRF282SR1

Overview

MRF282SR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for Class A/AB base station amplifiers operating up to 2600 MHz. It delivers 10 W PEP output at 2000 MHz with 10.5 dB power gain and 28% drain efficiency under 26 Vdc bias, targeting multicarrier cellular infrastructure applications including CDMA, TDMA, and PCS.

For engineers reviewing the MRF282SR1 datasheet, MRF282SR1 pinout, MRF282SR1 application, or MRF282SR1 equivalent, key selection criteria include its 2000 MHz two-tone IMD performance (–31 dBc), 10:1 VSWR ruggedness at 26 Vdc, thermal resistance of 4.2 °C/W, and NI-200S package compatibility with broadband matching networks.

Technical Context

This device operates as a common-source RF power amplifier stage with gate-threshold voltage of 2.0–4.0 Vdc and drain-source on-voltage of 0.4–0.6 Vdc at 0.5 A. Its small-signal input capacitance (Ciss = 15 pF) and reverse transfer capacitance (Crss = 0.45 pF) support stable broadband matching from 1810–2000 MHz.

The MRF282SR1 is characterized using series-equivalent large-signal impedance parameters (e.g., Zin = 1.85 + j1.6 Ω at 2000 MHz), enabling precise output network design for optimum load impedance (ZOL* = 3.55 + j0.2 Ω) at 10 W PEP and 75 mA quiescent drain current.

Key Specifications

Pinout & Package

Package: NI-200S (Case 458B-03, Style 1), flange-mounted ceramic/metal hermetic package with coplanar leads optimized for RF grounding and thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF282ZR1, the MRF282SR1 offers identical RF performance but requires NI-200S-specific mounting; versus PD570065, it trades bandwidth and efficiency for lower cost and mature thermal management in sub-2.5 GHz infrastructure.

Availability

MRF282SR1 is available at Aetrix Electronics and suitable for cellular base station transmitters, PCS band power amplifiers, and TDMA infrastructure amplifiers requiring stable component supply across multi-year production cycles.

Supply support for MRF282SR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, automotive radar, and industrial heating applications.

The MRF282SR1 belongs to Freescale's legacy RF Power Field Effect Transistor family, engineered specifically for high-reliability, high-linearity Class A/AB amplification in PCN, PCS, and FM base station applications.

FAQ

What is the maximum junction temperature rating for the MRF282SR1?

The MRF282SR1 has a maximum operating junction temperature (TJ) of 200°C, verified per Freescale's thermal characterization in Table 1. This rating enables reliable operation in sealed base station enclosures where case temperatures reach 150°C. Derating begins above 25°C ambient, with total device dissipation limited to 60 W at TC = 25°C and reduced by 0.34 W/°C above that point. The MRF282SR1 must be mounted to a heatsink capable of maintaining TC ≤ 150°C under worst-case RF load conditions.

Does the MRF282SR1 require external ESD protection?

Yes, the MRF282SR1 is highly susceptible to electrostatic discharge damage due to its MOS structure. Freescale explicitly cautions in the datasheet that "MOS devices are susceptible to damage from electrostatic charge." Gate terminals must be protected with transient voltage suppressors or RC snubbers before connection to driver ICs, and handling must follow ANSI/ESD S20.20 protocols. The MRF282SR1 gate leakage current specification (IGSS ≤ 1.0 μAdc at 20 Vdc) confirms sensitivity to overvoltage stress, making external ESD safeguards mandatory in production and test environments.

What is the recommended gate bias voltage for Class AB operation of the MRF282SR1?

The MRF282SR1 is specified for Class AB operation with a gate quiescent voltage (VGS(q)) of 3.0–5.0 Vdc at IDQ = 75 mA and VDD = 26 Vdc. Freescale's functional test data uses 75 mA IDQ as the reference bias point for all two-tone and CW measurements. To achieve this, a stable, low-noise gate bias network - typically a resistive divider with bypass capacitors - must be implemented to maintain VGS(q) within this range across temperature and unit-to-unit variation. Deviating outside this window risks gain compression or excessive IMD in the MRF282SR1.

Can the MRF282SR1 be used in 5G NR sub-6 GHz bands?

The MRF282SR1 is characterized and qualified for operation up to 2600 MHz, covering n1, n3, and n8 5G NR bands below 2.6 GHz. However, Freescale's datasheet does not provide validated performance data for 3.3–3.8 GHz n77/n78 bands. While the device may function at those frequencies, its gain drops significantly beyond 2.6 GHz, and IMD performance is uncharacterized. For new 5G NR designs, NXP recommends newer GaN alternatives like the MMG3002NT1. The MRF282SR1 remains appropriate for LTE-A and early 5G deployments strictly within 1800–2000 MHz.

What is the thermal resistance from junction to case (RθJC) for the MRF282SR1?

The MRF282SR1 has a thermal resistance of RθJC = 4.2 °C/W, as published in Table 2 of the Freescale datasheet. This value is measured under standardized JEDEC conditions and reflects the intrinsic thermal path from the silicon die to the metal flange surface. When designing heatsinking, this parameter must be combined with the heatsink's thermal resistance to ambient (RθSA) and interface material resistance (RθINT) to calculate total junction temperature: TJ = TA + (PD × (RθJC + RθINT + RθSA)). For 60 W max dissipation, the MRF282SR1 requires a total system thermal resistance ≤ 2.3 °C/W to hold TJ ≤ 200°C at 25°C ambient.