NXP Semiconductors MRF282ZR1

Overview

MRF282ZR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for Class A/AB base station amplifiers operating up to 2600 MHz. It delivers 10 W PEP output at 2000 MHz with 10.5 dB power gain, 28% drain efficiency, and −31 dBc intermodulation distortion under two-tone test conditions at 26 Vdc. It is used in multicarrier PCS/PCN infrastructure transmitters.

For engineers reviewing the MRF282ZR1 datasheet, MRF282ZR1 pinout, MRF282ZR1 application, or MRF282ZR1 equivalent, key selection criteria include its 10 W broadband RF output capability at 1930–2000 MHz, 4.2 °C/W junction-to-case thermal resistance, 65 V drain-source breakdown rating, RoHS-compliant NI-200Z package, and proven 10:1 VSWR ruggedness at full power.

Technical Context

The MRF282ZR1 employs a lateral MOSFET structure optimized for high-efficiency, broadband RF power amplification in base station final stages. Its design supports stable operation under high VSWR conditions (10:1 at 26 Vdc, 2000 MHz, 10 W CW) and features series-equivalent large-signal impedance characterization for precise matching network design.

It operates with a gate threshold voltage of 2.0–4.0 Vdc and requires a quiescent gate bias of 3.0–5.0 Vdc to maintain 75 mA IDQ at 26 Vdc drain supply. The device's input capacitance (15 pF), output capacitance (8.0 pF), and reverse transfer capacitance (0.45 pF) are specified at 26 Vdc and 1 MHz, enabling predictable broadband matching across 1810–2000 MHz bands.

Key Specifications

Pinout & Package

The MRF282ZR1 is housed in the NI-200Z metal-ceramic flange-mount package (Case 458C-03, Style 1), optimized for RF grounding and thermal dissipation in high-power base station modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF282ZR1, MRF282SR1 offers identical RF performance in a mechanically incompatible package, while PD57018-E delivers higher frequency capability and power at the cost of increased design complexity and non-interchangeable biasing - neither is pin-compatible, and both require layout or circuit revision.

Availability

MRF282ZR1 is available at Aetrix Electronics and suitable for PCS base station transmitters, CDMA multicarrier amplifiers, and TDMA infrastructure repeaters requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRF282ZR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for wireless infrastructure, emphasizing ruggedness, linearity, and thermal reliability in macrocell base station applications.

The MRF282ZR1 belongs to Freescale's MRF282 family of lateral N-channel broadband RF power MOSFETs, engineered specifically for Class A/AB PCN and PCS base station amplifiers operating up to 2600 MHz.

FAQ

What is the maximum drain-source voltage rating for the MRF282ZR1?

The MRF282ZR1 has a drain-source breakdown voltage (V(BR)DSS) of 65 Vdc, tested at VGS = 0 and ID = 10 μAdc. This rating provides a 2.5× safety margin over its typical 26 Vdc operating supply, ensuring robustness against voltage transients in base station power amplifier circuits. The MRF282ZR1 must not be operated beyond this absolute maximum rating to prevent permanent damage.

Does the MRF282ZR1 support 10:1 VSWR operation, and under what conditions?

Yes, the MRF282ZR1 is characterized to safely handle 10:1 VSWR at 26 Vdc, 2000 MHz, and 10 W CW output power without degradation. This ruggedness is verified per Freescale's test methodology and reflects real-world antenna mismatch resilience in outdoor macrocell installations. The MRF282ZR1 maintains functionality under these conditions due to its lateral MOSFET structure and thermal design.

What is the gate threshold voltage range for the MRF282ZR1, and how does it affect biasing?

The MRF282ZR1 has a gate threshold voltage (VGS(th)) range of 2.0–4.0 Vdc, measured at VDS = 10 Vdc and ID = 50 μAdc. Its recommended gate quiescent voltage (VGS(q)) is 3.0–5.0 Vdc to achieve 75 mA IDQ at 26 Vdc drain supply. This range ensures stable Class AB operation while accommodating process variation - the MRF282ZR1 requires precise gate bias control to maintain linearity and efficiency.

How does the thermal resistance of the MRF282ZR1 impact heatsink design?

The MRF282ZR1 has a junction-to-case thermal resistance (RθJC) of 4.2 °C/W, meaning each watt of dissipated power raises the junction temperature by 4.2 °C above the case temperature. To maintain TJ ≤ 200 °C at maximum 60 W total dissipation, the heatsink must hold TC ≤ 150 °C. This value directly determines minimum heatsink thermal resistance and mounting interface requirements for the MRF282ZR1 in continuous-duty base station applications.

Is the MRF282ZR1 RoHS compliant, and what does the 'R1' suffix indicate?

Yes, the MRF282ZR1 is RoHS compliant per EU Directive 2011/65/EU, with lead-free and halogen-free construction. The 'R1' suffix indicates tape-and-reel packaging: 500 units per 12 mm wide, 7-inch diameter reel. This format supports automated surface-mount assembly in high-volume production of RF power amplifier modules where the MRF282ZR1 is deployed.